Patents Assigned to International Rectifler Corporation
  • Methods of combining silicon and III-nitride material on a single wafer
    Patent number: 8866190
    Abstract: A semiconductor device that includes one semiconductor device formed in one semiconductor material and a second semiconductor device formed in another semiconductor material on a common substrate, and a method of fabricating the semiconductor device.
    Type: Grant
    Filed: June 14, 2006
    Date of Patent: October 21, 2014
    Assignee: International Rectifler Corporation
    Inventor: Mike Briere