Abstract: A continuous observation apparatus of magnetic flux distribution in which a long sample containing a superconducting material or magnetic material is transferred to an observation position and magnetic flux is observed sequentially at each of certain areas along a longitudinal direction of the sample is provided. A method of continuously observing magnetic flux by which a long sample containing a superconducting material or magnetic material is transferred to an observation position and magnetic flux is observed sequentially at each of certain areas along a longitudinal direction of the sample is also provided.

Abstract: In one embodiment, a superconducting coil includes a tertiary parallel superconductor unit (60) composed of superposed in parallel a plurality of layers of secondary parallel superconductor units (50). The layers of secondary parallel superconductor units include a plurality of superconductor elements (40) arranged in parallel along the axial direction of the coil, forming a superconducting conductor unit. The tertiary parallel superconductor unit is wound on a bobbin (55). In another embodiment, the superconducting coil includes one or more layers of the secondary parallel superconductor unit wound on the bobbin. In both embodiments, the secondary parallel superconductor unit can include at least one non-superconducting conductor element (70). The layer of the secondary parallel superconductor unit forming an outer side of the tertiary parallel superconductor unit can include at least one non-superconducting conductor element.

Abstract: A superconducting circuit includes a first transformer to produce a first alternating-current output at a secondary-side inductor, a second transformer to produce a second alternating-current output at a secondary-side inductor, a first pulse generating circuit to produce a single flux quantum pulse responsive to the first alternating-current output, a second pulse generating circuit to produce a single flux quantum pulse responsive to the second alternating-current output, and a confluence buffer circuit to merge the single flux quantum pulses from the pulse generating circuits, wherein each of the pulse generating circuits includes a superconducting loop including the secondary-side inductor, a first Josephson junction situated in the superconducting loop to generate the single flux quantum pulse, and a second Josephson junction situated in the superconducting loop, a threshold value of the second Josephson junction for an electric current flowing through the secondary-side inductor being different from tha

Abstract: The present invention relates to a method of preparing an oxide superconducting film, the method includes reacting a metal acetate containing metal M selected from the group consisting of lanthanum, neodymium and samarium with fluorocarboxylic acid having not less than three carbon atoms, reacting barium acetate with fluorocarboxylic acid having two carbon atoms, reacting copper acetate with fluorocarboxylic acid having not less than two carbon atoms, respectively, followed by refining reaction products, dissolving the reaction products in methanol such that a molar ratio of the metal M, barium and copper is 1:2:3 to prepare a coating solution, and coating a substrate with the coating solution to form a gel film, followed by calcining and firing the gel film to prepare an oxide superconducting film.

Abstract: A high-temperature superconductive device is disclosed, including a ramp-edge junction. The ramp-edge junction includes a first electrode layer (5) that defines the size of the ramp-edge junction and a second electrode layer (6). The width of the second electrode layer (6) is greater than the width of the first electrode layer (5). The first electrode layer (5) and the second electrode layer (6) touch in part, and are separated via a first insulation layer (7) in remaining part. Because the ramp-edge junction includes the first electrode layer (5) and the second electrode layer (6), the inductance of the ramp-edge junction can be reduced with the critical current density Jc being kept at a high level.

Abstract: To provide a composition for a thick oxide superconducting film containing a copper salt of a branched saturated aliphatic carboxylic acid having 6 or more carbon atoms and/or a copper salt of an alicyclic carboxylic acid having 6 or more carbon atoms, which is suitable for producing thick copper based oxide superconducting films by the MOD process and which can be subjected to film formation with uniformity at a high speed, and an oxide superconductor in the form of a thick film tape which is subjected to film formation with uniformity at a high speed using the subject composition for a thick oxide superconducting film.

Abstract: The present invention provides a superconducting device including a substrate, a first superconducting pattern formed on the substrate, an insulating pattern formed on the first superconducting pattern, and a second superconducting pattern formed at the uppermost level in the multilayered superconducting pattern. A barrier layer of a Josephson junction is formed on the lower side of, or within the second superconducting pattern. The second superconducting pattern constitutes a circuit element on the insulating pattern.

Abstract: A circuit includes a latch circuit including a Josephson junction and configured to perform a latch operation based on a hysteresis characteristic in response to a single flux quantum, a load circuit including load inductance and load resistance and coupled to an output of the latch circuit, and a reset circuit provided between the output of the latch circuit and the load circuit and configured to reset the latch circuit a predetermined time after the latch operation by the latch circuit, wherein the Josephson junction is driven by a direct current.

Abstract: RE superconductive layer excelling in Jc and Tc is formed on an interlayer capable of preventing cracking and diffusion of substrate-constituting Ni element into YBCO layer and excelling in crystallinity and surface smoothness. The interlayer is formed by coating a surface of metal substrate with a mixed solution composed of an organometallic acid salt of cerium, an organometallic acid salt of a solid solution formation element capable of forming a solid solution with cerium and an organometallic acid salt of a charge compensation element capable of compensating for a charge mismatch attributed to a difference between the electron valences of respective ions of cerium and the solid solution formation element and subsequently carrying out heat treatment in a reducing atmosphere of 900 to 1200° C. whose pressure ranges from 0.1 Pa to below atmospheric pressure. Thereafter, a rare earth oxide superconductive layer is formed on the interlayer.

Abstract: A thin film material and a method of manufacturing the thin film material are obtained with which properties of films formed on a substrate can be improved. A superconducting wire 1 includes a substrate 2, an intermediate thin film layer (intermediate layer 3) formed on the substrate and comprised of one layer or at least two layers, and a single-crystal thin film layer (superconducting layer 4) formed on the intermediate thin film layer (intermediate layer 3). An upper surface (ground surface 10) that is the upper surface of at least one layer of the intermediate thin film layer (intermediate layer 3) and is opposite to the single-crystal thin film layer (superconducting layer 4) is ground.

Abstract: The present invention is configured such that, in a low AC loss oxide superconductor constituted by providing an oxide superconducting layer 6 on a substrate 1, said oxide superconducting layer 6 is separated into a plurality of filament conductors 2 in parallel to the lengthwise direction of said substrate 1 by dividing grooves 3 plurally formed in the widthwise direction of said substrate, and a high-resistance oxide 8 is formed in said dividing grooves 3. Because of the invention, it is possible to increase the insulation properties of individually divided mated filament conductors, and to obtain an oxide superconductor that has low AC loss.

Abstract: A method of fabrication of an RE-Ba-Cu—O-based oxide superconductor, characterized by using an RE-Ba-O-based compound (RE being one type or two types or more of rare earth elements) and a Ba-Cu-O-based material for liquid phase as a starting material, melting the material for liquid phase, then growing the crystal.

Abstract: A superconducting system that includes an interface circuit capable of making the best use of a high-speed superconducting circuit and a high-speed semiconductor circuit. A multi-chip module in which an Nb superconducting circuit having Josephson junctions formed by the use of Nb and an oxide high-temperature superconducting latch interface circuit having Josephson junctions formed by the use of an oxide high-temperature superconductor are connected is located in a low temperature environment kept at 4.2 K. The oxide high-temperature superconducting latch interface circuit is connected to a high-speed semiconductor amplifier and a signal outputted from the Nb superconducting circuit is transmitted to the high-speed semiconductor amplifier.

Abstract: A superconducting circuit includes a first transformer to produce a first alternating-current output at a secondary-side inductor, a second transformer to produce a second alternating-current output at a secondary-side inductor, a first pulse generating circuit to produce a single flux quantum pulse responsive to the first alternating-current output, a second pulse generating circuit to produce a single flux quantum pulse responsive to the second alternating-current output, and a confluence buffer circuit to merge the single flux quantum pulses from the pulse generating circuits, wherein each of the pulse generating circuits includes a superconducting loop including the secondary-side inductor, a first Josephson junction situated in the superconducting loop to generate the single flux quantum pulse, and a second Josephson junction situated in the superconducting loop, a threshold value of the second Josephson junction for an electric current flowing through the secondary-side inductor being different from tha

Abstract: A circuit includes a latch circuit including a Josephson junction and configured to perform a latch operation based on a hysteresis characteristic in response to a single flux quantum, a load circuit including load inductance and load resistance and coupled to an output of the latch circuit, and a reset circuit provided between the output of the latch circuit and the load circuit and configured to reset the latch circuit a predetermined time after the latch operation by the latch circuit, wherein the Josephson junction is driven by a direct current.

Abstract: There is provided a process for preparing a composite material of an oxide crystal film and a substrate by forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid phase method, wherein problems such as cracking of the oxide crystal film, separation of the oxide crystal film from the substrate, and development of a reaction layer between the substrate and the solution can be minimized. The solvent for forming the solution phase uses either a BaO—CuO—BaF2 system or a BaO—CuO—Ag—BaF2 system, and when the substrate with a seed crystal film bonded to the surface is brought in contact with the solution to form (grow) the oxide crystal film on the substrate, the temperature of the solution is controlled to a temperature of no more than 850° C.

Abstract: At least two ramp-edge-structure Josephson junctions having different critical current densities to one another are provided on a substrate.

Abstract: A circuit includes a latch circuit including a Josephson junction and configured to perform a latch operation based on a hysteresis characteristic in response to a single flux quantum, a load circuit including load inductance and load resistance and coupled to an output of the latch circuit, and a reset circuit provided between the output of the latch circuit and the load circuit and configured to reset the latch circuit a predetermined time after the latch operation by the latch circuit, wherein the Josephson junction is driven by a direct current.

Abstract: In an A/D converter having a single flux quantum circuit having a flux quantum as an information carrier, a superconducting amplifier circuit driven by an AC current, and a semiconductor circuit, the operations of the circuits are synchronized with each other and a data signal from the single flux quantum circuit is transmitted to the semiconductor circuit. An AC current as the power source of a superconducting amplifier circuit is inputted as a master clock signal to the single flux quantum circuit and the semiconductor circuit to synchronize the operations of the circuits with the master clock signal. The single flux quantum circuit has a clock signal frequency multiplier circuit, a demultiplexing circuit and a memory circuit.

Abstract: A method of manufacturing a tape-formed oxide superconductor, in which a tape-formed wire material (6 in FIG. 1) is extended between a pair of reels (5a and 5b). Besides, a reactive gas is supplied form the gas supply ports of a reactive gas supply pipe (3a) vertically to the upper side film surface of the tape-formed wire material (6), so as to react the film body of this tape-formed wire material into a superconducting layer, while at the same time, a gas after the reaction is discharged from the gas discharge ports of discharge pipes (4a and 4b) for discharging the gas after the reaction. Likewise, the reactive gas is supplied vertically to the lower side film surface of the tape-formed wire material (6), so as to react the film body of this tape-formed wire material into a superconducting layer, while at the same time, the gas after the reaction is discharged from the gas discharge ports of discharge pipes (4c and 4d) for discharging the gas after the reaction.