Patents Assigned to Interuniversitair Micro-Elecronica Centrum
  • FINFET FIELD EFFECT TRANSISTOR INSULATED FROM THE SUBSTRATE
    Publication number: 20100276693
    Abstract: A finFET field effect transistor is produced by the formation of an electrical junction between the thin fin portion of semiconductor material which forms the channel of the transistor and the circuit substrate. Doping particles are implanted in the substrate through a mask which is then subsequently used to form the thin fin portion of the channel. The channel of the finFET transistor is thus electrically insulated from the circuit substrate in the same manner as in MOS integrated circuits realized from bulk silicon substrates.
    Type: Application
    Filed: July 15, 2010
    Publication date: November 4, 2010
    Applicants: STMicroelectronics (Crolles 2) SAS, Interuniversitair Micro-Elecronica Centrum
    Inventor: Damien Lenoble
  • FINFET FIELD EFFECT TRANSISTOR INSULTATED FROM THE SUBSTRATE
    Publication number: 20090001463
    Abstract: A finFET field effect transistor is produced by the formation of an electrical junction between the thin fin portion of semiconductor material which forms the channel of the transistor and the circuit substrate. Doping particles are implanted in the substrate through a mask which is then subsequently used to form the thin fin portion of the channel. The channel of the finFET transistor is thus electrically insulated from the circuit substrate in the same manner as in MOS integrated circuits realized from bulk silicon substrates.
    Type: Application
    Filed: June 25, 2008
    Publication date: January 1, 2009
    Applicants: STMicroelectronics (Crolles 2) SAS, Interuniversitair Micro-Elecronica Centrum
    Inventor: Damien Lenoble