Abstract: The present invention is related to a semiconductor device for electrostatic discharge or overvoltage protection applications, said device comprising means for absorbing an electrostatic discharge pulse or an overvoltage level, said means being triggered at intermediate voltages and said means including a series configuration of at least two trigger components. Said means can further be extended with a third trigger component and possibly further trigger components in said series configuration, the addition of said third and further trigger components extending sequentially the range of the intermediate trigger voltages. Said trigger components can comprise components, preferably diodes, with a specific breakdown voltage, the sum of the breakdown voltages of said diodes defining the specific intermediate trigger voltage of said device.