Patents Assigned to InterUniversitaire Microelektronica
  • Vertical MISFET devices
    Patent number: 6207977
    Abstract: The present invention relates to processes for fabrication of Vertical MISFET devices or a stack of several of such devices. The Vertical MISFET device comprises a highly doped drain region, a non or lowly doped channel region and a source region forming a heterojunction with the channel region. The source region comprises a lowly doped part which contacts the channel region and a highly doped part which contacts the lowly doped part.
    Type: Grant
    Filed: October 21, 1998
    Date of Patent: March 27, 2001
    Assignee: InterUniversitaire Microelektronica
    Inventor: Carlos Jorge Ramiro Proenca Augusto