Abstract: A level-shifter architecture with high-voltage driving capability and extremely low power consumption, exploiting dynamic control of the charge on the gate electrodes of the high-voltage output transistors, is provided. The architecture can be integrated in CMOS technology and can be applied to various applications, including monolithic integration of high-voltage display driver circuits in battery-powered applications.
Type:
Grant
Filed:
September 22, 2000
Date of Patent:
May 4, 2004
Assignees:
Interuniversitar Micro-Elektronica Centrum (IMEC vzw), Universiteit Gent, Asulab S.A.