Abstract: The present invention is related to a metallization structure on a fluorine-containing dielectric and a method for fabrication thereof. This metallization structure comprises a conductive pattern; a fluorine-containing dielectric; and a barrier layer containing a material, i.e. a near noble metal such as Co, Ni, Pt and Pd, said barrier layer comprising at least a first part, being positioned between said fluorine-containing dielectric and said conductive pattern, said first part containing at least a first and a second sub-layer, said first sub-layer contacting said fluorine-containing dielectric and being impermeable for fluorine. Particularly by depositing a layer of said material on a fluorine-containing dielectric, a stable and thin layer of a fluoride of said material is formed in a self-limiting way.