Abstract: A new method of forming a tantalum carbide nitride diffusion barrier layer having optimized nitrogen concentration for improved thermal stability is described. A contact region is provided in a substrate. A via is opened through an insulating layer to the contact region. A tantalum carbide nitride barrier layer is deposited within the via wherein the tantalum carbide nitride layer has an optimized nitrogen content of between about 17% and 24% by atomic percentage. A layer of copper is deposited overlying the tantalum carbide nitride barrier layer to complete copper metallization in the fabrication of an integrated circuit device.
Type:
Grant
Filed:
December 3, 2001
Date of Patent:
September 23, 2003
Assignees:
ProMos Technologies, Inc., Mosel Vitelic Inc., Intineon Technologies, Inc.