Patents Assigned to IntriEnergy Inc.
  • Patent number: 9741882
    Abstract: A tandem junction photovoltaic cell has a first p-n junction with a first energy band gap, and a second p-n junction with a second energy band gap less than the first energy band gap. The junctions are separated by a quantum tunneling junction. The first p-n junction captures higher energy photons and allows lower energy photons to pass through and be captured by the second p-n junction. Quantum dots positioned within the first p-n junction promote quantum tunneling of charge carriers to increase the current generated by the first p-n junction and match the current of the second p-n junction for greater efficiency.
    Type: Grant
    Filed: August 25, 2014
    Date of Patent: August 22, 2017
    Assignee: IntriEnergy Inc.
    Inventors: Franco Gaspari, Anatoli Chkrebtii
  • Patent number: 9391218
    Abstract: A voltaic cell uses a radioactive material for energy. Energetic particles emitted by the radioactive material boost charge carriers within a semiconductor lattice into higher energy bands. Dielectric layers having quantum dots tuned by size and spacing (density) to favor particles having specific energies permit quantum mechanical tunneling of the charge carriers before they lose significant energy, are captured, or recombine. The energetic carriers tunnel to an electrical circuit, where they perform work.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: July 12, 2016
    Assignee: IntriEnergy Inc.
    Inventor: Franco Gaspari