Patents Assigned to Intronix, Inc.
  • Patent number: 5578814
    Abstract: A sensor device which allows significant reductions in structural dimensions while maintaining sensitivity over a wide operating range. The sensor device comprises a plurality of integral layers formed over a typical field effect transistor. This plurality of integral layers includes a first additional electrode, a dielectric layer, a conducting layer, a second additional electrode, an active medium, a transparent electrode, and a layer of luminofore.
    Type: Grant
    Filed: May 24, 1995
    Date of Patent: November 26, 1996
    Assignee: Intronix, Inc.
    Inventors: Alexander A. Dadali, Aleksandr M. Fomin