Abstract: A sensor device which allows significant reductions in structural dimensions while maintaining sensitivity over a wide operating range. The sensor device comprises a plurality of integral layers formed over a typical field effect transistor. This plurality of integral layers includes a first additional electrode, a dielectric layer, a conducting layer, a second additional electrode, an active medium, a transparent electrode, and a layer of luminofore.
Type:
Grant
Filed:
May 24, 1995
Date of Patent:
November 26, 1996
Assignee:
Intronix, Inc.
Inventors:
Alexander A. Dadali, Aleksandr M. Fomin