Abstract: Laminated interposers and packages, with embedded trace interconnects are provided. An example process for making an interposer or package achieves vertical conductive vias in the package by depositing conductive traces on multiple wafers or panes, then laminating these substrates into a stack, thereby embedding the conductive traces. The laminated stack is sliced to dimensions of an interposer or electronic package. A side of the sliced stack is then used as the top of the interposer or package, rendering some of the horizontally laid traces into vertical conductive vias. The interposer or package can be finished or developed by adding redistribution layers on the top and bottom surfaces, and active and passive components. Electronic components can also be embedded in the laminated stack. Some of the stack layers can be active dies, such as memory controllers, memory storage arrays, and processors, to form a memory subsystem or self-contained computing device.

Abstract: A stacked, multi-layer transmission line is provided. The stacked transmission line includes at least a pair of conductive traces, each conductive trace having a plurality of conductive stubs electrically coupled thereto. The stubs are disposed in one or more separate spatial layers from the conductive traces.

Abstract: Apparatuses and methods are described. This apparatus includes a bridge die having first contacts on a die surface being in a molding layer of a reconstituted wafer. The reconstituted wafer has a wafer surface including a layer surface of the molding layer and the die surface. A redistribution layer on the wafer surface includes electrically conductive and dielectric layers to provide conductive routing and conductors. The conductors extend away from the die surface and are respectively coupled to the first contacts at bottom ends thereof. At least second and third IC dies respectively having second contacts on corresponding die surfaces thereof are interconnected to the bridge die and the redistribution layer. A first portion of the second contacts are interconnected to top ends of the conductors opposite the bottom ends thereof in part for alignment of the at least second and third IC dies to the bridge die.

Abstract: A microelectronic assembly can be made by forming a redistribution structure supported on a carrier, the structure including two or more layers of deposited dielectric material and two or more electrically conductive layers and including conductive features such as pads and traces electrically interconnected by vias. Electrical connectors may project above a second surface of the structure opposite an interconnection surface of the redistribution structure adjacent to the carrier. A microelectronic element may be attached and electrically connected with conductive features at the second surface, and a dielectric encapsulation can be formed contacting the second surface and surfaces of the microelectronic element. Electrically conductive features at the interconnection surface can be configured for connection with corresponding features of a first external component, and the electrical connectors can be configured for connection with corresponding features of a second external component.

Abstract: Each of a first and a second integrated circuit structures has hole(s) in the top surface, and capacitors at least partially located in the holes. A semiconductor die is attached to the top surface of the second structure. Then the first and second structures are bonded together so that the die becomes disposed in the first structure's cavity, and the holes of the two structures are aligned to electrically connect the respective capacitors to each other. A filler is injected into the cavity through one or more channels in the substrate of the first structure. Other embodiments are also provided.

Abstract: Flipped radio frequency (RF) and microwave filters and components for compact package assemblies are provided. An example RF filter is constructed by depositing a conductive trace, such as a redistribution layer, onto a flat surface of a substrate, to form an RF filter element. The substrate is vertically mounted on a motherboard, thereby saving dedicated area. Multiple layers of substrate can be laminated into a stack and mounted so that the RF filter elements of each layer are in vertical planes with respect to a horizontal motherboard, providing dramatic reduction in size. Deposited conductive traces of an example flipped RF filter stack can provide various stub configurations of an RF filter and emulate various distributed filter elements and their configuration geometries. The deposited conductive traces can also form other electronic components to be used in conjunction with the RF filter elements. A wirebond or bond via array (BVA™) version can provide flipped RF and microwave filters.

Abstract: A microelectronic assembly (300) or system (1500) includes at least one microelectronic package (100) having a microelectronic element (130) mounted face up above a first surface (108) of a substrate (102), one or more columns (138, 140) of contacts (132) extending in a first direction (142) along the microelectronic element front face. Columns (104A, 105B, 107A, 107B) of terminals (105 107) exposed at a second surface (110) of the substrate extend in the first direction. First terminals (105) exposed at surface (110) in a central region (112) thereof having width (152) not more than three and one-half times a minimum pitch (150) of the columns of terminals can be configured to carry address information usable to determine an addressable memory location. An axial plane of the microelectronic element can intersect the central region.

Abstract: Apparatuses relating generally to a microelectronic package having protection from interference are disclosed. In an apparatus thereof, a substrate has an upper surface and a lower surface opposite the upper surface and has a ground plane. A first microelectronic device is coupled to the upper surface of the substrate. Wire bond wires are coupled to the ground plane for conducting the interference thereto and extending away from the upper surface of the substrate. A first portion of the wire bond wires is positioned to provide a shielding region for the first microelectronic device with respect to the interference. A second portion of the wire bond wires is not positioned to provide the shielding region. A second microelectronic device is coupled to the substrate and located outside of the shielding region. A conductive surface is over the first portion of the wire bond wires for covering the shielding region.

Abstract: Embedded vialess bridges are provided. In an implementation, discrete pieces containing numerous conduction lines or wires in a 3-dimensional bridge piece are embedded where needed in a main substrate to provide dense arrays of signal, power, and electrical ground wires below the surface of the main substrate. Vertical conductive risers to reach the surface plane of the main substrate are also included in the discrete piece, for connecting to dies on the surface of the substrate and thereby interconnecting the dies to each other through the dense array of wires in the discrete piece. The discrete piece to be embedded may have parallel planes of conductors at regular intervals within itself, and thus may present a working surface homogeneously covered with the ends of vertical conductors available to connect surface components to each other and to ground and power at many places along the embedded piece.

Abstract: A method of making a microelectronic package includes bonding a conductive structure to a carrier so that the conductive structure overlies a rear surface of a microelectronic element disposed on the carrier and an exposed top surface of the carrier. The conductive structure may be a monolithic structure having a base and a plurality of interconnections extending continuously away from the base toward the carrier. The plurality of interconnections may have free ends that overlie the carrier. The microelectronic element may be positioned between at least two adjacent interconnections of the plurality of interconnections. The plurality of interconnections and the microelectronic element may be encapsulated with an encapsulant. The carrier may be removed to expose the free ends of the interconnections and bond pads of the microelectronic element. The free ends of the interconnections and the bond pads of the microelectronic element may be conductively connected with the terminals of the microelectronic package.

Abstract: An insulating second element is provided and overlies a surface of a first element which consists essentially of a material having a CTE of less than 10 ppm/° C. and has a first thickness in a first direction normal to the surface. Openings extend in the first direction through the second element. The first element is abraded to produce a thinned first element having a second thickness less than the first thickness. Conductive elements are formed at a first side of the interposer coincident with or adjacent to a surface of the thinned first element remote from the second element. A conductive structure extends through the openings in the second element, wherein the conductive elements are electrically connected with terminals of the interposer through the conductive structure, and the terminals are disposed at a second side of the interposer opposite from the first side.

Abstract: Apparatuses and methods relating generally to a microelectronic package for wafer-level chip scale packaging with fan-out are disclosed. In an apparatus, there is a substrate having an upper surface and a lower surface opposite the upper surface. A microelectronic device is coupled to the upper surface with the microelectronic device in a face-up orientation. Wire bond wires are coupled to and extending away from the upper surface. Posts of the microelectronic device extend away from a front face thereof. Conductive pads are formed in the substrate associated with the wire bond wires for electrical conductivity.

Abstract: Representative implementations of devices and techniques provide interconnect structures and components for coupling various carriers, printed circuit board (PCB) components, integrated circuit (IC) dice, and the like, using tall and/or fine pitch physical connections. Multiple layers of conductive structures or materials are arranged to form the interconnect structures and components. Nonwettable barriers may be used with one or more of the layers to form a shape, including a pitch of one or more of the layers.

Abstract: The invention pertains to semiconductor memories, and more particularly to enhancing the reliability of stacked memory devices. Apparatuses and methods are described for implementing RAID-style error correction to increase the reliability of the stacked memory devices.

Abstract: Representative implementations of devices and techniques provide a hybrid interposer for 3D or 2.5D package arrangements. A quantity of pockets is formed on a surface of a carrier in a predetermined pattern. The pockets are filled with a reflowable conductive material. Chip dice are coupled to the interposer carrier by fixing terminals of the dice into the pockets. The carrier may include topside and backside redistribution layers to provide fanout for the chip dice, for coupling the interposer to another carrier, board, etc. having a pitch greater than that of the chip dice.

Abstract: HD color video using monochromatic CMOS image sensors integrated in a 3D package is provided. An example 3DIC package for color video includes a beam splitter to partition received light of an image stream into multiple light outputs. Multiple monochromatic CMOS image sensors are each coupled to one of the multiple light outputs to sense a monochromatic image stream at a respective component wavelength of the received light. Each monochromatic CMOS image sensor is specially constructed, doped, controlled, and tuned to its respective wavelength of light. A parallel processing integrator or interposer chip heterogeneously combines the respective monochromatic image streams into a full-spectrum color video stream, including parallel processing of an infrared or ultraviolet stream. The parallel processing of the monochromatic image streams provides reconstruction to HD or 4K HD color video at low light levels.

Abstract: In a microelectronic component having conductive vias (114) passing through a substrate (104) and protruding above the substrate, conductive features (120E.A, 120E.B) are provided above the substrate that wrap around the conductive vias' protrusions (114?) to form capacitors, electromagnetic shields, and possibly other elements. Other features and embodiments are also provided.

Abstract: A method for making a microelectronic unit includes forming a plurality of wire bonds on a first surface in the form of a conductive bonding surface of a structure comprising a patternable metallic element. The wire bonds are formed having bases joined to the first surface and end surfaces remote from the first surface. The wire bonds have edge surfaces extending between the bases and the end surfaces. The method also includes forming a dielectric encapsulation layer over a portion of the first surface of the conductive layer and over portions of the wire bonds such that unencapsulated portions of the wire bonds are defined by end surfaces or portions of the edge surfaces that are unconvered by the encapsulation layer. The metallic element is patterned to form first conductive elements beneath the wire bonds and insulated from one another by portions of the encapsulation layer.

Abstract: The invention pertains to non-volatile memory devices, and more particularly to advantageously encoding data in non-volatile devices in a flexible manner by both NVM manufacturers and NVM users. Multiple methods of preferred state encoding (PSE) and/or error correction code (ECC) encoding may be used in different pages or blocks in the same NVM device for different purposes which may be dependent on the nature of the data to be stored.

Abstract: In a multi-chip module (MCM), a “super” chip (110N) is attached to multiple “plain” chips (110F? “super” and “plain” chips can be any chips). The super chip is positioned above the wiring board (WB) but below at least some of plain chips (110F). The plain chips overlap the super chip. Further, the plain chips' low speed IOs can be connected to the WB by long direct connections such as bond wires (e.g. BVAs) or solder stacks; such connections can be placed side by side with the super chip. Such connections can be long, so the super chip is not required to be thin. Also, if through-substrate vias (TSVs) are omitted, the manufacturing yield is high and the manufacturing cost is low. Other structures are provided that combine the short and long direct connections to obtain desired physical and electrical properties.