Patents Assigned to ION ENGINEERING
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Patent number: 11014041Abstract: A chemical processing system for removing carbon dioxide from a gas mixture using a multicomponent amine-based scrubbing solution includes a spectroscopic evaluation system with a liquid contact probe for spectroscopic investigation, an energy source connected with the liquid contact probe to provide the spectroscopic stimulation energy to the probe, a spectrometer connected with the liquid contact probe to detect the spectroscopic response energy to the probe and to output spectral data corresponding to the spectroscopic response energy, and a machine learning spectral data analyzer connected to the spectrometer for evaluation of the spectral data to determine a concentration value for each of water, amine component and captured carbon dioxide in the scrubbing solution, the machine learning spectral data analyzer being trained for each such component over a corresponding trained concentration range, and optionally over a trained temperature range to provide a temperature-compensated concentration value.Type: GrantFiled: March 5, 2018Date of Patent: May 25, 2021Assignee: ION Engineering, LLCInventors: Charles Panaccione, Nathan R. Brown, Erik Everhardus Bernardus Meuleman
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Publication number: 20190374898Abstract: A carbon dioxide capture system, fluid contactor and method are disclosed. In embodiments, a gas-liquid contactor unit is disposed along a process fluid flow axis and includes a contactor network of flow diversion barriers with flow voids for movement of process fluids therebetween. A plurality of heat exchange channels are provided in the flow diversion barriers to transport a heat exchange fluid through the contactor network. A heat exchange feed channel is provided to deliver feed of the heat exchange fluid to the heat exchange channels at multiple feed locations spaced along the flow axis. At least one heat exchange bypass channel may extend beyond the multiple feed locations to deliver a portion of the feed of the heat exchange fluid to additional heat exchange channels located downstream from the multiple feed locations for the heat exchange channels.Type: ApplicationFiled: January 18, 2018Publication date: December 12, 2019Applicant: ION ENGINEERING, LLCInventors: CHARLES PANACCIONE, ERIK EVERHARDUS BERNARDUS MEULEMAN, GREGORY ALLAN STAAB, NATHAN R. BROWN
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Publication number: 20150125372Abstract: Compositions comprising an organic salt, an amine and water are described herein. The methods of using the compositions include the removal of an acid gas from a gas mixture.Type: ApplicationFiled: May 14, 2012Publication date: May 7, 2015Applicants: ION ENGINEERING, THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ALABAMAInventors: Ronald C. Stites, Jerrod Hohman, Trevor Carlisle, Andrew L. Lafrate, Jason E. Bara, Gregory Allan Staab, Michael C. Huffman
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Patent number: 6869865Abstract: Activation of impurities is achieved without involving creation of a crystal defect or deformation by using phonon absorption. A laser beam (42) having a wavelength in a range of 16 to 17 ?m is irradiated onto silicon, to cause phonon absorption. Before an energy supplied from the laser beam (42) diffuses around a portion which is irradiated with the laser beam (42), solid phase epitaxy in the portion finishes. Accordingly, crystallization occurs only in the portion which is irradiated with the laser beam (42), and does not occur in a portion which is not irradiated with the laser beam (42). Hence, heat is not excessively absorbed. Also, local phase change such as melting and solidification is not caused.Type: GrantFiled: June 30, 2003Date of Patent: March 22, 2005Assignees: Renesas Technology Corp., Ion Engineering Research Institute CorporationInventors: Shigeto Maegawa, Takashi Ipposhi, Kazunobu Ohta, Yasuo Inoue, Masanobu Kohara, Takashi Eura, Natsuro Tsubouchi
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Publication number: 20040087118Abstract: Activation of impurities is achieved without involving creation of a crystal defect or deformation by using phonon absorption. A laser beam (42) having a wavelength in a range of 16 to 17 &mgr;m is irradiated onto silicon, to cause phonon absorption. Before an energy supplied from the laser beam (42) diffuses around a portion which is irradiated with the laser beam (42), solid phase epitaxy in the portion finishes. Accordingly, crystallization occurs only in the portion which is irradiated with the laser beam (42), and does not occur in a portion which is not irradiated with the laser beam (42). Hence, heat is not excessively absorbed. Also, local phase change such as melting and solidification is not caused.Type: ApplicationFiled: June 30, 2003Publication date: May 6, 2004Applicants: Renesas Technology Corp., Ion Engineering Research Institute, Corporation, Natsuro TsubouchiInventors: Shigeto Maegawa, Takashi Ipposhi, Kazunobu Ohta, Yasuo Inoue, Masanobu Kohara, Takashi Eura, Natsuro Tsubouchi
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Patent number: 5609633Abstract: A bone substitute, which provides both the fracture toughness of titanium or titanium alloys and the bioactivity of apatite, wherein titanium or titanium alloys and apatite are tightly adhered, is produced by soaking a substrate of titanium or titanium alloy in an alkaline solution to form a layer comprising amorphous alkali titanate, followed by the heating of the said substrate up to at most the titanium or titanium alloy transition temperature so as to form a stabilized amorphous alkali titanate layer and a sufficient concentration gradient of alkali and titanium ions to permit the growth of apatite thereon from solutions containing apatite-containing ions.Type: GrantFiled: November 9, 1994Date of Patent: March 11, 1997Assignee: The Foundation for Promotion of Ion EngineeringInventor: Tadashi Kokubo