Patents Assigned to ION ENGINEERING
  • Patent number: 11014041
    Abstract: A chemical processing system for removing carbon dioxide from a gas mixture using a multicomponent amine-based scrubbing solution includes a spectroscopic evaluation system with a liquid contact probe for spectroscopic investigation, an energy source connected with the liquid contact probe to provide the spectroscopic stimulation energy to the probe, a spectrometer connected with the liquid contact probe to detect the spectroscopic response energy to the probe and to output spectral data corresponding to the spectroscopic response energy, and a machine learning spectral data analyzer connected to the spectrometer for evaluation of the spectral data to determine a concentration value for each of water, amine component and captured carbon dioxide in the scrubbing solution, the machine learning spectral data analyzer being trained for each such component over a corresponding trained concentration range, and optionally over a trained temperature range to provide a temperature-compensated concentration value.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: May 25, 2021
    Assignee: ION Engineering, LLC
    Inventors: Charles Panaccione, Nathan R. Brown, Erik Everhardus Bernardus Meuleman
  • Publication number: 20190374898
    Abstract: A carbon dioxide capture system, fluid contactor and method are disclosed. In embodiments, a gas-liquid contactor unit is disposed along a process fluid flow axis and includes a contactor network of flow diversion barriers with flow voids for movement of process fluids therebetween. A plurality of heat exchange channels are provided in the flow diversion barriers to transport a heat exchange fluid through the contactor network. A heat exchange feed channel is provided to deliver feed of the heat exchange fluid to the heat exchange channels at multiple feed locations spaced along the flow axis. At least one heat exchange bypass channel may extend beyond the multiple feed locations to deliver a portion of the feed of the heat exchange fluid to additional heat exchange channels located downstream from the multiple feed locations for the heat exchange channels.
    Type: Application
    Filed: January 18, 2018
    Publication date: December 12, 2019
    Applicant: ION ENGINEERING, LLC
    Inventors: CHARLES PANACCIONE, ERIK EVERHARDUS BERNARDUS MEULEMAN, GREGORY ALLAN STAAB, NATHAN R. BROWN
  • Publication number: 20150125372
    Abstract: Compositions comprising an organic salt, an amine and water are described herein. The methods of using the compositions include the removal of an acid gas from a gas mixture.
    Type: Application
    Filed: May 14, 2012
    Publication date: May 7, 2015
    Applicants: ION ENGINEERING, THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ALABAMA
    Inventors: Ronald C. Stites, Jerrod Hohman, Trevor Carlisle, Andrew L. Lafrate, Jason E. Bara, Gregory Allan Staab, Michael C. Huffman
  • Patent number: 6869865
    Abstract: Activation of impurities is achieved without involving creation of a crystal defect or deformation by using phonon absorption. A laser beam (42) having a wavelength in a range of 16 to 17 ?m is irradiated onto silicon, to cause phonon absorption. Before an energy supplied from the laser beam (42) diffuses around a portion which is irradiated with the laser beam (42), solid phase epitaxy in the portion finishes. Accordingly, crystallization occurs only in the portion which is irradiated with the laser beam (42), and does not occur in a portion which is not irradiated with the laser beam (42). Hence, heat is not excessively absorbed. Also, local phase change such as melting and solidification is not caused.
    Type: Grant
    Filed: June 30, 2003
    Date of Patent: March 22, 2005
    Assignees: Renesas Technology Corp., Ion Engineering Research Institute Corporation
    Inventors: Shigeto Maegawa, Takashi Ipposhi, Kazunobu Ohta, Yasuo Inoue, Masanobu Kohara, Takashi Eura, Natsuro Tsubouchi
  • Publication number: 20040087118
    Abstract: Activation of impurities is achieved without involving creation of a crystal defect or deformation by using phonon absorption. A laser beam (42) having a wavelength in a range of 16 to 17 &mgr;m is irradiated onto silicon, to cause phonon absorption. Before an energy supplied from the laser beam (42) diffuses around a portion which is irradiated with the laser beam (42), solid phase epitaxy in the portion finishes. Accordingly, crystallization occurs only in the portion which is irradiated with the laser beam (42), and does not occur in a portion which is not irradiated with the laser beam (42). Hence, heat is not excessively absorbed. Also, local phase change such as melting and solidification is not caused.
    Type: Application
    Filed: June 30, 2003
    Publication date: May 6, 2004
    Applicants: Renesas Technology Corp., Ion Engineering Research Institute, Corporation, Natsuro Tsubouchi
    Inventors: Shigeto Maegawa, Takashi Ipposhi, Kazunobu Ohta, Yasuo Inoue, Masanobu Kohara, Takashi Eura, Natsuro Tsubouchi
  • Patent number: 5609633
    Abstract: A bone substitute, which provides both the fracture toughness of titanium or titanium alloys and the bioactivity of apatite, wherein titanium or titanium alloys and apatite are tightly adhered, is produced by soaking a substrate of titanium or titanium alloy in an alkaline solution to form a layer comprising amorphous alkali titanate, followed by the heating of the said substrate up to at most the titanium or titanium alloy transition temperature so as to form a stabilized amorphous alkali titanate layer and a sufficient concentration gradient of alkali and titanium ions to permit the growth of apatite thereon from solutions containing apatite-containing ions.
    Type: Grant
    Filed: November 9, 1994
    Date of Patent: March 11, 1997
    Assignee: The Foundation for Promotion of Ion Engineering
    Inventor: Tadashi Kokubo