Abstract: A method and apparatus for moving an article relative to and between a pair of distance sensing probes of a thickness measuring apparatus which are spaced apart a known distance D is described. In the method, the article is moved relative to and between the pair of probes in at least one direction in a plane normal to a common measurement axis Ac between the probes. A distance a along the common measurement axis Ac between the first probe and a point on the surface of the article nearest to the first probe of the pair that intersects the common measurement axis Ac is measured. A similar distance b between the second probe and the article is measured.

Abstract: An apparatus for processing substrates with a plasma jet with increased throughput is described. The apparatus comprises at least two carrousels for holding a plurality of substrates. Each of the carrousels includes a rotatable angle drive having a rotation axis Da, a plurality of arms extending radially from the angle drive and a plurality of rotatable substrate holders. Each of the substrate holders is connected to one of the arms, each of the rotatable substrate holders has a rotation axis Ha positioned at a distance R from the rotation axis Da of the rotatable angle drive. The carousel angle drive provides programmable motion of the substrates being treated relative to a plasma jet generator. The plasma jet generator is movable from a first position Z.sub.1 adjacent to the first carousel to a second position Z.sub.2 adjacent to the second carousel. While the substrates on the first carousel are being treated by the plasma jet, the substrates on the second carousel can be loaded or unloaded.

Abstract: A holder for wafer-like articles is formed by providing a platform having a wafer-like article facing surface that includes at least one annular groove therein. The annular groove has a ceiling surface therein which is provided with an opening. A gas conducting conduit is connected to the opening. A gas, which introduced into the conduit, exits the conduit through the opening. By choosing a particular orientation of the conduit relative to the annular groove, the gas exiting the opening can be caused to circulate in a clockwise or counter clockwise fashion. The circular flow of gas causes the formation of a vortex adjacent to the article facing surface. A wafer-like article may be held in a suspended state adjacent to the wafer-like article facing surface without contact by the vortex and the gas flowing between the wafer-like article and the article facing surface.

Abstract: A plasma jet generator apparatus enabling effective deflection of the generated plasma jet is described. The apparatus has an electrode chamber having a gas inlet and an outlet and an electrode positioned therein defining an electrode axis. A pair of magnetic deflection systems for deflecting the direction of the plasma flowing from the electrode axis are provided. The magnetic deflection systems are formed from pole pairs which are distributed about the electrode axis such that two magnetic fields that are substantially perpendicular to each other can be generated to deflect the plasma away from the electrode axis.

Abstract: An apparatus (40) for providing consistent, non-jamming registration of a notched semiconductor wafer (46) undergoing multiple sequential process work includes a plate (41) upon which the wafer (46) is laid flat. The notch (45) of the notched semiconductor wafer (46) is registered against a first roller (42) that is fixedly mounted to the plate (41). A second roller (43), also fixedly mounted to the plate (41), registers a first point (47) along the circumference of the wafer (46). A third roller (48) is fixedly mounted to a bracket (50) that is movable approximately along the radius of the wafer (46). A force (52) is applied to this bracket (50) resulting in the third roller (48) applying a force against the wafer (46). This resultant force, coupled with the rotating capability of the rollers (42,43,48), allows the wafer (46) to rotate into a proper registration position.

Abstract: A system for the formation of circuit patterns on a large flat panel display (78) using plasma assisted chemical etching to achieve a uniform or controllably nonuniform etch depth over the entire area of the display. An overlying film (60) is provided on a large flat panel display substrate (12) with a photolithographic mask (62) overlying the film and having a predetermined pattern of openings (64) therethrough. The substrate is placed adjacent a plasma etching tool which has a projected area which is smaller than the area of the surface of the substrate. The etching tool is scanned across the surface of the substrate to transfer the pattern of the photolithographic mask into the film on the surface thereof. Thereafter, the photolithographic mask is removed from the surface of the overlying film.