Abstract: The present invention concerns a method of forming a chalcogenide thin film for a phase-change memory. In the method of forming a chalcogenide thin film according to the present invention, a substrate with a pattern formed is loaded into a reactor, and a source gas is supplied onto the substrate. Here, the source gas includes at least one source gas selected from germanium (Ge) source gas, gallium (Ga) source gas, indium (In) source gas, selenium (Se) source gas, antimony (Sb) source gas, tellurium (Te) source gas, tin (Sn) source gas, silver (Ag) source gas, and sulfur (S) source gas. A first purge gas is supplied onto the substrate in order to purge the source gas supplied onto the substrate, a reaction gas for reducing the source gas is then supplied onto the substrate, and a second purge gas is supplied onto the substrate in order to purge the reaction gas supplied onto the substrate.

Abstract: A dry cleaning method of an apparatus for depositing a carbon-containing film is provided. The method includes in-situ cleaning an inside of a reactor of the apparatus, wherein the cleaning of the inside of the reactor of the apparatus comprises supplying a cleaning gas including halogens with being activated by using a remote plasma generator to the reactor and simultaneously supplying a carbon-removing gas without being activated to the reactor. In the method, a by-product in a solid form is not generated, and in-situ cleaning can be performed without stopping the apparatus for depositing a carbon-containing film after a predetermined amount of wafers are treated, such that productivity of the apparatus for depositing a carbon-containing film can be maximized.

Abstract: A solar cell and a fabricating method thereof are provided. In the method of fabricating the solar cell, a p-type semiconductor substrate on whose light-receiving surface an anti-reflection coating is formed is loaded into a processing chamber. In this case, the p-type semiconductor substrate may be loaded on a substrate support of an apparatus of processing a plurality of substrates along the circumference of the substrate support, in the state where the back surface of the p-type semiconductor substrate faces upward. Then, a back surface field (BSF) layer having the characteristic of Negative Fixed Charge (NFC) is formed with AlO, AlN or ALON on the back surface of the p-type semiconductor substrate.

Abstract: The present invention concerns a method of forming a chalcogenide thin film for a phase-change memory. In the method of forming a chalcogenide thin film according to the present invention, a substrate with a pattern formed is loaded into a reactor, and a source gas is supplied onto the substrate. Here, the source gas includes at least one source gas selected from germanium (Ge) source gas, gallium (Ga) source gas, indium (In) source gas, selenium (Se) source gas, antimony (Sb) source gas, tellurium (Te) source gas, tin (Sn) source gas, silver (Ag) source gas, and sulfur (S) source gas. A first purge gas is supplied onto the substrate in order to purge the source gas supplied onto the substrate, a reaction gas for reducing the source gas is then supplied onto the substrate, and a second purge gas is supplied onto the substrate in order to purge the reaction gas supplied onto the substrate.

Abstract: Provided is a method of depositing a chalcogenide film for phase-change memory. When the chalcogenide film for phase-change memory is deposited through a method using plasma such as plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD), a plasma reaction gas including He is used such that the crystallinity of the chalcogenide film is adjusted and the grain size and morphology of the deposited film are adjusted.

Abstract: A method is provided for depositing thin films in which the thin films are continuously deposited into one chamber and 1-6 wafers are loaded into the chamber. In the method, a process gap between a shower head or a gas injection unit and a substrate is capable of being controlled. The method comprises (a) loading at least one substrate into the chamber, (b) depositing the Ti thin film onto the substrate, adjusted so that a first process gap is maintained, (c) moving a wafer block so that the first process gap is changed into a second process gap in order to control the process gap of the substrate upon which the Ti thin film is deposited, (d) depositing the TiN thin film onto the substrate, moved to set the second process gap, and (e) unloading the substrate upon which the Ti/TiN thin films are deposited.

Abstract: Provided are an apparatus and method for depositing a thin film, and a method for gap-filling a trench in a semiconductor device. The thin film depositing apparatus includes a plurality of substrates provided on the same space inside a reactor, wherein deposition of the thin film and partial etching of the deposited thin film are repeated to form the thin film on the plurality of substrates by exposing the substrates to two or more source gases and an etching gas supplied together at predetermined time intervals while rotating the substrates. According to exemplary embodiments, it is possible to concurrently or alternatively perform deposition and etching of a thin film, so that a thin film with good gap-fill capability can be deposited.

Abstract: Provided is an in-situ thin-film deposition method in which a TiSix/Ti layer or TiSix/Ti/TiN layer can be continuously deposited. The method serves to deposit a thin layer as a resistive contact and barrier on a loaded wafer and is performed in a thin-film deposition apparatus including a transfer chamber having a robot arm therein and a plurality of chambers installed as a cluster type on the transfer chamber. The method includes depositing a TiSix layer on the wafer by supplying a first reactive gas containing Ti and a second reactive gas containing Si to a first chamber; and transferring the wafer to a second chamber using the transfer chamber and depositing a TiN layer on the TiSix layer.

Abstract: A chemical vapor deposition method comprises steps of: a) injecting a source gas into a chamber so that the source gas is adsorbed on a substrate; b) injecting a purge gas into the chamber for a predetermined period of time so that the source gas remaining in the chamber is purged; c) injecting a reactant gas into a plasma generating portion, and generating plasma at the plasma generating portion by applying a first-level RF power source to a RF electrode plate so that radical of the reactant gas is adsorbed on the substrate; d) injecting a purge gas into the chamber for a predetermined period of time so that the reactant gas remaining in the chamber is purged; and e) applying a second-level RF power source to the plasma generating portion at the step a), b) and d) while the steps a) to d) are being repeated.

Abstract: Disclosed is a method of depositing thin films, in which the thin films are continuously deposited into one chamber and 1-6 wafers are loaded into the chamber. In the method, a process gap between a shower head or a gas injection unit and a substrate is capable of being controlled. The method comprises (a) loading at least one substrate into the chamber, (b) depositing the Ti thin film onto the substrate, adjusted so that a first process gap is maintained, (c) moving a wafer block so that the first process gap is changed into a second process gap in order to control the process gap of the substrate upon which the Ti thin film is deposited, (d) depositing the TiN thin film onto the substrate, moved to set the second process gap, and (e) unloading the substrate upon which the Ti/TiN thin films are deposited.

Abstract: An apparatus for semiconductor processing capable of performing semiconductor processing such as etching, depositing, etc. on a surface of a substrate such as a wafer. The apparatus for semiconductor processing, comprises: a reaction chamber having a gate through which a substrate to be processed is transferred; one or more shower heads disposed at an upper side of the reaction chamber, for spraying gas so as to perform semiconductor processing; one or more wafer supporting units disposed at an inner lower side of the reaction chamber in correspondence to each of the shower heads, for supporting the substrate; a processing space forming unit disposed in the reaction chamber, for forming a processing space for semiconductor processing by sealing the shower heads and the wafer supporting units; and an exhausting system connected to the processing space forming unit for controlling a pressure and air exhaustion inside the reaction chamber and the processing space formed by the processing space forming unit.

Abstract: Provided is a method of depositing a metal nitride film having a multilayer structure and different deposition speeds on a substrate. The method is performed by forming a first lower metal nitride film on the substrate at a first deposition speed, forming a second lower metal nitride film on the first lower metal nitride film at a second deposition speed, and forming an upper metal nitride film having a large content of nitrogen (N) on a lower TiN film which is formed by the forming of the first lower metal nitride film and the second lower metal nitride film, at a third deposition speed, to improve stability with respect to exposure to air/moisture. The deposition speed of the metal nitride film having a multi-layer structure satisfies a relationship that the second deposition speed?the first deposition speed?the third deposition speed.

Abstract: A heater for depositing a thin film to deposit a thin film on a seated wafer by heating is provided. The heater for depositing a thin film includes: a wafer supporting plate on which a wafer is seated and a plurality of injection holes are disposed at the edge of the wafer supporting plate and in which a heat generating member is included; a shaft disposed at the lower side of the wafer supporting plate which comprises an inert gas pathway through which inert gas is provided; and a flow channel forming cover bonded to the lower part of the wafer supporting plate, and comprising an inner space formed between the flow channel forming cover and the wafer supporting plate, wherein the injection holes and the inert gas pathway are connected via the inner space.

Abstract: A method of depositing a thin film using a hafnium compound includes depositing a primary thin film and depositing a secondary thin film. The depositing of the primary thin film and the depositing of the secondary thin film are repeated once or more. The depositing of the primary thin film includes feeding a first reactive gas, purging the first reactive gas, feeding a third reactive gas, and purging the third reactive gas, and repeating the aforementioned steps a first plurality of (N) times. The feeding of the first reactive gas includes feeding a second reactive gas, purging the second reactive gas, feeding the third reactive gas, and purging the third reactive gas, and repeating the aforementioned steps a second plurality of (M) times.

Abstract: Provided is a thin film deposition reactor, including a reactor block having a deposition space, a wafer block, a top lid for covering and sealing the reactor block, a showerhead for spraying a reaction gas on the wafer block, and an exhaust line through which gases are exhausted from the reactor block. A lower pumping baffle and an upper pumping baffle are stacked on a bottom of the reactor block between an outer circumference of the wafer block and an inner circumference of the reactor block. A lower pumping region is formed between the lower pumping baffle and an inner sidewall of the reactor block. An upper pumping region is formed between the upper pumping baffle and the inner sidewall of the reactor block. The deposition space is connected to the upper pumping region by a plurality of upper pumping holes formed in the upper pumping baffle, and the upper pumping region is connected to the lower pumping region by a plurality of lower pumping holes formed in the lower pumping baffle.

Abstract: A thin film deposition reactor including a reactor block on which a wafer is placed, a shower head plate for uniformly maintaining a predetermined pressure by covering the reactor block, a wafer block installed in the reactor block, on which the wafer is to be seated; an exhausting portion connected to the reactor block for exhausting a gas from the reactor block; a first connection line in communication with the shower head plate, through which a first reaction gas and/or inert gas flow, a second connection line in communication with the shower head plate, through which a second reaction gas and/or inert gas flow, and a diffusion plate mounted on a lower surface of the shower head plate.

Abstract: An atomic layer desposition (ALD) thin film deposition equipment having a cleaning apparatus, this equipment including a reactor in which a wafer is mounted and a thin film is deposited on the wafer, a first reaction gas supply portion for supplying a first reaction gas to the reactor, a second reaction gas supply portion for supplying a second reaction gas to the reactor, a first reaction gas supply line for connecting the first reaction gas supply portion to the reactor, a second reaction gas supply line for connecting the second reaction gas supply portion to the reactor, a first inert gas supply line for supplying an inert gas from inert gas supply source to the first reaction gas supply line, a second inert gas supply line for supplying the inert gas from the inert gas supply source to the second reaction gas supply line, an exhaust line for exhausting the gas from the reactor to the outside, and a cleaning gas supply line connected to the first reaction gas supply line for supplying a cleaning gas for c

Abstract: A semiconductor thin film deposition apparatus having at least one reactor in which a wafer is received, a gas supply portion for supplying a reaction gas or inert gas to the reactor, and an exhaust pump for exhausting gas from the reactor, characterized in that the improvement comprises an ozone supply portion for generating ozone as a gas that reacts with the reaction gas, and for supplying the ozone to the reactor.

Abstract: An atomic layer deposition (ALD) thin film deposition apparatus including a reactor in which a wafer is mounted and a thin film is deposited on the wafer, a first reaction gas supply portion for supplying a first reaction gas to the reactor, a second reaction gas supply portion for supplying a second reaction gas to the reactor, a first reaction gas supply line for connecting the first reaction gas supply portion to the reactor, a second reaction gas supply line for connecting the second reaction gas supply portion to the reactor, a first inert gas supply line for supplying an inert gas from an inert gas supply source to the first reaction gas supply line, a second inert gas supply line for supplying the inert gas from the inert gas supply source to the second reaction gas supply line, and an exhaust line for exhausting the gas from the reactor.

Abstract: An atomic layer deposition (ALD) thin film deposition apparatus including a reactor in which a wafer is mounted and a thin film is deposited on the wafer, a first reaction gas supply portion for supplying a first reaction gas to the reactor, a second reaction gas supply portion for supplying a second reaction gas to the reactor, a first reaction gas supply line for connecting the first reaction gas supply portion to the reactor, a second reaction gas supply line for connecting the second reaction gas supply portion to the reactor, a first inert gas supply line for supplying an inert gas from an inert gas supply source to the first reaction gas supply line, a second inert gas supply line for supplying the inert gas from the inert gas supply source to the second reaction gas supply line, and an exhaust line for exhausting the gas from the reactor.