Patents Assigned to IQE, KC, LLC
  • COMPOSITIONALLY GRADED NITRIDE-BASED HIGH ELECTRON MOBILITY TRANSISTOR
    Publication number: 20140167058
    Abstract: An epitaxial structure on a substrate includes a gallium nitride buffer layer over the substrate and a graded channel layer over the gallium nitride layer. The graded channel layer consists essentially of InxGa1-xN wherein the value of x gets smaller from a first surface of the channel layer proximate to a buffer layer to a second surface remote from the buffer layer.
    Type: Application
    Filed: August 22, 2013
    Publication date: June 19, 2014
    Applicant: IQE, KC, LLC
    Inventors: Oleg Laboutin, Yu Cao, Wayne Johnson