Patents Assigned to IRRESISTIBLE MATERIALS LTD
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Patent number: 11746255Abstract: Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative substituted with an amine and a crosslinking agent. The formulation is drain compatible with other solvents used in the semiconductor industry.Type: GrantFiled: February 25, 2018Date of Patent: September 5, 2023Assignee: IRRESISTIBLE MATERIALS LTDInventors: Alex P. G. Robinson, Guy Dawson, Alan G. Brown, Thomas Lada, John Roth, Edward Jackson
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Patent number: 11474430Abstract: The present disclosure relates to novel multiple trigger monomer containing negative working photoresist compositions and processes. The processes involve removing acid-labile protecting groups from crosslinking functionalities in a first step and crosslinking the crosslinking functionality with an acid sensitive crosslinker in a second step. The incorporation of a multiple trigger pathway in the resist catalytic chain increases the chemical gradient in areas receiving a low dose of irradiation, effectively acting as a built in dose depend quencher-analog and thus enhancing chemical gradient and thus resolution, resolution blur and exposure latitude. The photoresist compositions utilize novel monomers and mixtures of novel monomers. The methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.Type: GrantFiled: August 26, 2017Date of Patent: October 18, 2022Assignee: IRRESISTIBLE MATERIALS LTDInventors: Alex Philip Graham Robinson, Alexandra McClelland, Andreas Frommhold, Dongxu Yang, John Roth, David Ure
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Publication number: 20200272050Abstract: The present disclosure relates to novel negative-type photoresist composition and methods of their use. The disclosure further relates to multiple trigger photoresist processes which allow for the improvement in contrast, resolution, and/or line edges roughness in some systems without giving up sensitivity. The photoresist compositions and the methods of the current disclosure are ideal for fine patent processing using, for example, ultraviolet radiation, extreme ultraviolet radiation, beyond extreme ultraviolet radiation, X-rays and changed particle. The disclosure further relates to sensitivity enhancing materials useful in the disclosed compositions and methods.Type: ApplicationFiled: February 25, 2019Publication date: August 27, 2020Applicant: IRRESISTIBLE MATERIALS, LTDInventors: Alex P. G. Robinson, Carmen Popescu, John Roth, Andreas Frommhold, Edward Jackson, Alexandra McClelland, Tom Lada, Greg O'Callahan
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Patent number: 10438808Abstract: Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative and a crosslinking agent. Further disclosed is a process for forming a hard-mask.Type: GrantFiled: May 25, 2016Date of Patent: October 8, 2019Assignee: IRRESISTIBLE MATERIALS, LTDInventors: Alex Philip Graham Robinson, Thomas Lada, John L. Roth, Alan G. Brown, Andreas Frommhold, Edward A. Jackson
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Patent number: 10290500Abstract: Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative and a crosslinking agent. Further disclosed is a process for forming a hard-mask.Type: GrantFiled: December 4, 2015Date of Patent: May 14, 2019Assignee: Irresistible Materials LTDInventors: Alex Phillip Graham Robinson, Andeas Frommhold, Alan Brown, Tom Lada
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Publication number: 20180373143Abstract: The present disclosure relates to novel positive and negative photoresist compositions containing components that are based on one or more specific metals, metal salts, and/or metal complexes and methods of using them. The photoresist compositions and the methods are ideal for high speed, fine pattern processing using, for example, ultraviolet radiation, extreme ultraviolet radiation, beyond extreme ultraviolet radiation, X-rays, electron beam and other charged particle rays. The metals are characterized by high absorption cross sections and selected elastic and inelastic electron cross section.Type: ApplicationFiled: April 22, 2016Publication date: December 27, 2018Applicant: Irresistible Materials LTDInventors: Alex Phillip Graham Robinson, Andreas Frommhold, John Roth
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Patent number: 10095112Abstract: The present disclosure relates to novel multiple trigger negative working photoresist compositions and processes. The processes involve removing acid-labile protecting groups from crosslinking functionalities in a first step and crosslinking the crosslinking functionality with an acid sensitive crosslinker in a second step. The incorporation of a multiple trigger pathway in the resist catalytic chain increases the chemical gradient in areas receiving a low dose of irradiation, effectively acting as a built in dose depend quencher-analog and thus enhancing chemical gradient and thus resolution, resolution blur and exposure latitude. The photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.Type: GrantFiled: February 24, 2017Date of Patent: October 9, 2018Assignee: IRRESISTIBLE MATERIALS LTDInventors: Alex Phillip Graham Robinson, Alexandra McClelland, Andreas Frommhold, Dongxu Yang, John Roth
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Publication number: 20180246408Abstract: The present disclosure relates to novel multiple trigger negative working photoresist compositions and processes. The processes involve removing acid-labile protecting groups from crosslinking functionalities in a first step and crosslinking the crosslinking functionality with an acid sensitive crosslinker in a second step. The incorporation of a multiple trigger pathway in the resist catalytic chain increases the chemical gradient in areas receiving a low dose of irradiation, effectively acting as a built in dose depend quencher-analog and thus enhancing chemical gradient and thus resolution, resolution blur and exposure latitude. The photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.Type: ApplicationFiled: February 24, 2017Publication date: August 30, 2018Applicant: Irresistible Materials, LTDInventors: Alex Phillip Graham Robinson, Alexandra McClelland, Andreas Frommhold, Dongxu Yang, John Roth
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Publication number: 20170278703Abstract: Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative and a crosslinking agent. Further disclosed is a process for forming a hard-mask.Type: ApplicationFiled: December 4, 2015Publication date: September 28, 2017Applicant: Irresistible Materials LTDInventors: Alex Phillip Graham Robinson, Andeas Frommhold, Alan Brown, Tom Lada
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Patent number: 9632409Abstract: The present disclosure relates to novel fullerene derivatives, positive and negative photoresist compositions prepared therefrom and methods of using them. The derivatives, their photoresist compositions and the methods are ideal for high speed, fine pattern processing using, for example, ultraviolet radiation, extreme ultraviolet radiation, beyond extreme ultraviolet radiation, X-rays, electron beam and other charged particle rays.Type: GrantFiled: May 21, 2014Date of Patent: April 25, 2017Assignee: Irresistible Materials LTDInventors: Alex Phillip Graham Robinson, Richard Edward Palmer, Andreas Frommhold, Dongxu Yang
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Patent number: 9519215Abstract: The present application for patent discloses a composition of matter comprising: comprising a solvent; and an ester having a chemical structure chosen from (I), (II), or (III); wherein X and Y are the same or different, wherein at least one of X and Y comprises an acid labile group, wherein R1 is a saturated or unsaturated group having from 1-4 carbon atoms, R2 is chosen from hydrogen or a saturated or unsaturated group having from 1-4 carbon atoms, R3 is a saturated or unsaturated group having from 1-4 carbon atoms, and R4 is a saturated or unsaturated group having from 1-4 carbon atoms and A? is an anion.Type: GrantFiled: December 21, 2015Date of Patent: December 13, 2016Assignee: IRRESISTIBLE MATERIALS, LTDInventors: Alex Phillip Graham Robinson, Dongxu Yang, Andreas Frommhold, Thomas Lada, John L. Roth, Xiang Xue, Edward A. Jackson
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Patent number: 9383646Abstract: The present disclosure relates to novel two-step photoresist compositions and processes. The processes involve removing acid-labile groups in step one and crosslinking the remaining material with themselves or added crosslinking systems in step two. The incorporation of a multistep pathway in the resist catalytic chain increases the chemical gradient in areas receiving a low dose of irradiation, effectively acting as a built in dose depend quencher-analog and thus enhancing chemical gradient and thus resolution. The photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays. Dual functionality photosensitive compositions and methods are also disclosed.Type: GrantFiled: October 16, 2014Date of Patent: July 5, 2016Assignee: IRRESISTIBLE MATERIALS LTDInventors: Alex Philip Graham Robinson, Andreas Frommhold, Alan G. Brown, Thomas Lada
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Patent number: 9323149Abstract: The present disclosure relates to novel methanofullerene derivatives, negative-type photoresist compositions prepared therefrom and methods of using them. The derivatives, their photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays. Negative photosensitive compositions are also disclosed.Type: GrantFiled: February 24, 2014Date of Patent: April 26, 2016Assignee: IRRESISTIBLE MATERIALS LTDInventors: Alex Philip Graham Robinson, Jon Andrew Preece, Richard Edward Palmer, Andreas Frommhold, Dongxu Yang, Alexandra McClelland, Drew Athans, Xiang Xue
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Patent number: 9256126Abstract: The present disclosure relates to novel methanofullerene derivatives, negative-type photoresist compositions prepared therefrom and methods of using them. The derivatives, their photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.Type: GrantFiled: October 31, 2013Date of Patent: February 9, 2016Assignee: IRRESISTIBLE MATERIALS LTDInventors: Alex Philip Graham Robinson, Jon Andrew Preece, Richard Edward Palmer, Andreas Frommhold, Dongxu Yang, Alexandra McClelland, Drew Athens, Xiang Xu