Patents Assigned to ISSI/NexFlash Technologies, Inc.
  • Architecture and method for performing page write/verify in a flash memory chip
    Patent number: 6122197
    Abstract: A semiconductor non-volatile memory device is disclosed which is based on the use of Fowler-Nordheim electron tunneling to charge and discharge the isolated gates of the storage cells. The disclosed memory device includes circuitry capable of verifying the threshold level of written storage cells and rewriting only those cells whose threshold is outside a desired threshold range. The disclosed circuit has the further advantage of being able to load data words and verify cell contents simultaneously by utilizing both ends of the bit lines.
    Type: Grant
    Filed: July 1, 1998
    Date of Patent: September 19, 2000
    Assignee: ISSI/NexFlash Technologies, Inc.
    Inventors: Keyhan Sinai, Paul Jei-Zen Song