Abstract: The present invention relates to a method for in vitro expansion of erythroid cells. The method includes subjecting erythroid cells to 3-dimensional packed cell culture using a porous structure. The use of the composition according to the present invention enables in vitro expansion of erythroid cells in the most efficient manner.

Abstract: The present invention relates to a method for forming a metal nanowire or a metal nanomesh. More particularly, the present invention relates to a method for forming a metal nanowire or a metal nanomesh capable of forming a variety of metal nanowires or metal nanomeshes in a desired shape by a simplified method.

Abstract: A touch screen panel includes first electrode patterns disposed in a first direction, first connection patterns electrically connecting the first electrode patterns, second electrode patterns disposed in a second direction intersecting the first direction and insulated from the first electrode patterns, insulating patterns disposed on the first connection patterns, and second connection patterns disposed on the insulating patterns and electrically connecting the second electrode patterns, in which at least one of the first electrode patterns, the first connection patterns, the second electrode patterns, and the second connection patterns include a first polymer layer including a conductive material infiltrated therein, and the insulating patterns comprise a second polymer layer comprising a dielectric material infiltrated therein.

Abstract: Provided are a conductive bridging random access memory (CBRAM) device and a manufacturing method thereof. The CBRAM device includes a first electrode, a semiconductor oxide electrolyte layer formed on the first electrode and including a plurality of metal vacancies, a second electrode formed on the semiconductor oxide electrolyte layer, wherein when a positive voltage is applied to the second electrode, cations are reduced to the metal vacancies in the semiconductor oxide electrolyte layer to form a metal bridge.

Abstract: The present invention suggests a substrate manufacturing method and a manufacturing method of a semiconductor device comprising: providing a SOI structure having an insulation layer and a silicon layer laminated on a substrate; laminating to form a silicon germanium layer and a capping silicon layer on the SOI structure; implementing oxidation process at two or more temperatures and heat treatment process at least once during the oxidation process to form a germanium cohesion layer and a silicon dioxide layer; and removing the silicon dioxide layer.

Abstract: Provided is a nonvolatile memory device. The nonvolatile memory device includes: first and second electrodes spaced from each other; at least one nano crystal layer disposed between the first and second electrodes; and first and second material layers respectively disposed between the first and second electrodes and the nano crystal layer and having a bistable conductive property, wherein the first and second material layers are formed asymmetrical to each other.

Abstract: An image sensor and an operating method thereof are disclosed. The image sensor includes a first photoelectric conversion portion configured to receive plural lights, except for a light of first wavelength, to generate an electric charge; and a second photoelectric conversion portion configured to receive the light of the first wavelength to generate an electric charge, wherein at least a portion of the first photoelectric conversion portion and the second photoelectric conversion portion is spaced apart from each other in a vertical direction.

Abstract: Provided is a nonvolatile memory device. The nonvolatile memory device includes: first and second electrodes spaced from each other; at least one nano crystal layer disposed between the first and second electrodes; and first and second material layers respectively disposed between the first and second electrodes and the nano crystal layer and having a bistable conductive property, wherein the first and second material layers are formed asymmetrical to each other.

Abstract: The present invention relates to slurry for polishing crystalline phase-change materials and to a method for producing a phase-change device using the same. The slurry for polishing crystalline phase-change materials according to one embodiment of the present invention comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water. In addition, the method for producing a phase-change device according to one embodiment of the present invention comprises the following steps: preparing a substrate; forming a crystalline phase-change material film on the substrate; and removing the phase-change material film through a chemical-mechanical polishing process using slurry for polishing phase-change materials, which comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water.

Abstract: Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 ?m or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.

Abstract: Provided are a luminescent device and a method of manufacturing the same. The luminescent device includes a charge trapping layer having bistable conductance and negative differential resistance (NDR) characteristics, and an organic luminescent layer electrically connected to the charge trapping layer. The charge trapping layer comprise a nanocrystal layer intervened in an organic layer, and the nanocrystal layer comprises a plurality of nanocrystals.

Abstract: The present invention provides a display device and a method of driving the same. The display device includes a plurality of display pixels to display an image, a plurality of data lines connected to the display pixel, and a plurality of sensing lines connected to the display pixel.

Abstract: Provided are a solar cell a solar cell having high light absorbance and power conversion efficiency and a method for producing the solar cell. The solar cell includes a substrate, a first electrode disposed on the substrate, a photoactive layer disposed on the first electrode, and a second electrode disposed on the photoactive layer. The photoactive layer includes an electron acceptor and at least two electron donors.

Abstract: The present invention provides a solar cell and manufacturing method thereof. The solar cell according to the present invention comprises: first and second electrodes, at least one of which has light transmitting properties; two or more photoelectric conversion layers positioned between the first and second electrodes; and a transflective conductive layer positioned between the photoelectric conversion layers. Further, tunneling layers are also provided between the photoelectric conversion layers and the transflective conductive layer. The efficiency of the solar cell can be improved, as compared with the prior art, by providing tunneling layers and a transflective conductive layer in this way.

Abstract: In a pixel of a display device, a first transistor of which an second terminal is connected to a first terminal of a light emitting element supplies a driving current that corresponds to a voltage between a control terminal and the second terminal to the light emitting element, and a second terminal of the light emitting element is connected to a driving voltage. At least one second transistor transmits a black voltage that corresponds to a black gray to the control terminal of the first transistor in a first period and a second period, and transmits a gray voltage that corresponds to an input image signal to the control terminal of the first transistor in a third period. A third transistor is connected between the first terminal of the light emitting element and a voltage supply line to transmit a reference voltage, and the third transistor is turned on in the first period and turned off in the second period.

Abstract: A CMP slurry is provided comprising polishing particles, the polishing particle comprising organically modified colloidal silica. Also, a method of preparing a CMP slurry is provided, comprising the steps of: preparing polishing particles comprising organically modified silica; converting the polishing particles into an aqueous state; and adding pure water, a hydrophilic additive and a dispersing agent to the polishing particles. The polishing particles can be synthesized using a sol-gel process. According to the invention, a slurry having excellent polishing properties can be prepared, in which the surface properties of colloidal silica are changed to control the physical properties of the polishing particles and which can ensure a desired CMP removal rate while minimizing the occurrence of scratches.

Abstract: Disclosed is an apparatus and method for parsing a bitstream. The apparatus may include an input port analyzer to analyze an input port indicating a source of data in a description, a data receiver to receive the data via the analyzed input port, and a parsing controller to control a parsing process based on the data received via the input port.

Abstract: Provided are a luminescent device and a method of manufacturing the same. The luminescent device includes a charge trapping layer having bistable conductance and negative differential resistance (NDR) characteristics, and an organic luminescent layer electrically connected to the charge trapping layer.

Abstract: There is provided an organic light emitting display capable of compensating for the deterioration of organic light emitting diodes (OLED) while sharing an analog-to-digital converter (ADC). The organic light emitting display includes sub pixels positioned in the intersections between scan lines and data lines, a current source unit for supplying predetermined current to organic light emitting diodes (OLED) in a sensing period for grasping deterioration information on the OLEDs included in the sub pixels, at least one analog-to-digital converter (ADC) provided fewer than data lines in order to convert a voltage applied to the OLEDs into a digital signal, and a switching unit for coupling the data lines to the current source unit in the sensing period and for sequentially coupling at least one ADC to the data lines in the sensing period.

Abstract: Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 ?m or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.