Abstract: The present invention relates to a robot. A robot according to one embodiment of the present invention comprises: a body having a set volume: and a driving module provided in the left region and the right region of the body, respectively, and rotatably connected to the body by a rotation shaft, wherein the driving module comprises: a rotating member connected to the rotating shaft; a first driving part extending from one side of the rotating member slantwise by a first inclination angle with respect to the rotating shaft in a direction away from the rotating shaft; and a second driving part extending from the one side of the rotating member slantwise by a second inclination angle with respect to the rotating shaft in the direction away from the rotating shaft.

Abstract: Disclosed are a method and an apparatus for detecting a voice end point by using acoustic and language modeling information to accomplish strong voice recognition. A voice end point detection method according to an embodiment may comprise the steps of: inputting an acoustic feature vector sequence extracted from a microphone input signal into an acoustic embedding extraction unit, a phonemic embedding extraction unit, and a decoder embedding extraction unit, which are based on a recurrent neural network (RNN); combining acoustic embedding, phonemic embedding, and decoder embedding to configure a feature vector by the acoustic embedding extraction unit, the phonemic embedding extraction unit, and the decoder embedding extraction unit; and inputting the combined feature vector into a deep neural network (DNN)-based classifier to detect a voice end point.

Abstract: An organic light-emitting display device includes quantum dots and an RGB color filter layer having quantum dots and thus is capable of removing 100% of interference among red, green, and blue color filters.

Abstract: A selector according to an embodiment of the present disclosure includes a first electrode; a second electrode disposed opposite to the first electrode; an ion supply layer disposed between the first electrode and the second electrode to be on the side of the first electrode and doped with a metal, wherein the doped metal diffuses toward the second electrode; a switching layer disposed between the first electrode and the second electrode to be on the side of the second electrode, wherein the doped metal diffuses from the ion supply layer into the switching layer so that metal concentration distribution inside the switching layer is changed to generate metal filaments; and a diffusion control layer inserted between the ion supply layer and the switching layer, wherein the diffusion control layer serves to adjust electrical characteristics related to the generated metal filaments as the amount of the diffusing metal is adjusted in proportion to a thickness of the diffusion control layer.

Abstract: Disclosed are a BCTZ-based lead-free piezoelectric ceramic composition and a method of preparing a BCTZ-based lead-free piezoelectric ceramic which provide high piezoelectric properties and speaker characteristics. The method of preparing a lead-free piezoelectric ceramic includes preparing a mixture in which copper oxide is added to a BCTZ-based base material and sintering the mixture at a temperature of 1300° C. to 1600° C. for 1 to 5 hours, wherein a weight ratio of the copper oxide in the mixture is 0.6 wt %.

Abstract: A porous polymer structure having a smooth surface and a porous structure embedded below the surface can be simply produced by using a hydrophobic substrate with a steam spraying process, and the porous polymer structure can exhibit very excellent low-adhesive property due to the smooth surface and the porous structure embedded below the surface. It is possible to realize excellent low-adhesive property even without using a surface modifier or a lubricant. Since the structure shows flexibility, it can even be attached to a curved surface, and can be usefully applied to various industries due to a possible adjustment of the surface characteristic.

Abstract: Disclosed is a method for fabricating a semiconductor memory device which includes forming a channel hole inside a temporary stack structure including sacrificial layers and insulating layers alternately stacked on each other, forming a ferroelectric layer inside the channel hole, forming a stress control layer on an inner sidewall of the ferroelectric layer, performing a cooling process on an inner sidewall of the stress control layer, removing at least a portion of the stress control layer after the cooling process is performed, forming a vertical structure by sequentially forming a vertical channel layer and a vertical semiconductor layer on the ferroelectric layer, and removing the sacrificial layers from the temperature stack structure, and forming gate electrodes.

Abstract: The present disclosure relates to a two-phase Byzantine consensus method and system for state machine replication. A consensus method which is performed by a consensus system includes performing, by all of normal processes, consensus for a sequence number proposed by a process designated to be primary with respect to a client request according to an agreement protocol; and replacing the primary when the primary is suspicious of having a Byzantine fault according to a view change protocol.

Abstract: Provided is a method of compressing an occupancy map of a three-dimensional (3D) point cloud, and more specifically, a method of compressing an occupancy map of a point cloud in which an occupancy map image of a point cloud existing in a 3D space is compressed based on a compression quality or a patch-by-patch inspection method of the occupancy map image so that compression distortion is minimized when reconstructing the compressed occupancy map image so as to remarkably improve the quality of a reconstructed occupancy map image.

Abstract: Provided are a method for manufacturing a single-crystal semiconductor layer. The method of manufacturing the single crystalline semiconductor layer includes performing a unit cycle multiple times, wherein the unit cycle includes a metal precursor pressurized dosing operation in which a metal precursor is adsorbed on a surface of a single crystalline substrate by supplying the metal precursor onto the single crystalline substrate while an outlet of a chamber in which the single crystalline substrate is loaded is closed such that a reaction pressure in the chamber is increased; a metal precursor purge operation; a reactive gas supplying operation in which a reactive gas is supplied into the chamber to cause a reaction of the reactive gas with the metal precursor adsorbed on the single crystalline substrate after the metal precursor purge operation; and a reactive gas purge operation.

Abstract: The present disclosure relates to a technology of preparing an anion exchange composite membrane including: a porous polymer support; and a polyfluorene-based anion exchange membrane or a polyfluorene-based anion exchange membrane having a cross-linked structure formed on the support, and applying the same to alkaline fuel cells, water electrolysis, carbon dioxide reduction, metal-air batteries, etc. The polyfluorene-based anion exchange composite membrane including a porous polymer support according to the present disclosure has remarkably improved mechanical properties, dimensional stability, durability, long-term stability, etc.

Abstract: Provided is a color transformation filter including a plurality of nanostructures included in a subpixel and spaced apart from each other, the plurality of nanostructures having a first refractive index, a low refractive index layer provided adjacent to the plurality of nanostructures, the low refractive index layer having a second refractive index less than the first refractive index, and a color transformation element included in the low refractive index layer.

Abstract: A display device includes a pixel. The pixel includes a light-emitting element, a first capacitor, and first to fifth transistors. The first transistor is connected between a first voltage line receiving a first driving voltage and the light-emitting element, and operates in response to a potential of a first node, and the second transistor is connected between a data line and the first node, and receives a first scan signal. The first capacitor is connected between the first node and a second node, and the third transistor is connected between the first transistor and the first node, and receives a second scan signal. The fourth transistor is connected between a reference voltage line and the first node, and receives a third scan signal, and the fifth transistor is connected between the first transistor and the second node, and receives an emission control signal.

Abstract: Provided is a light-emitting device including a reflective layer including a plurality of nano-structures two-dimensionally disposed regularly and a low-refractive-index layer disposed adjacent to the plurality of nano-structures, a first electrode disposed on the reflective layer, an organic emission layer disposed on the first electrode, and a second electrode disposed on the organic emission layer, wherein each of the plurality of nano-structures includes a non-metallic material, and the low-refractive-index layer includes a dielectric material having a second refractive index lower than a first refractive index of the non-metallic material.

Abstract: A three-dimensional flash memory including floating devices and a manufacturing method therefor are disclosed.

Abstract: The present invention relates to the stabilization of an effective ingredient by using a mineral material. In the present invention, the effective ingredient can be stably supported using the mineral material, and a microcapsule obtained by the manufacturing method according to the present invention, when discharged to nature, causes no environmental problems due to encapsulation ingredients thereof being the same as soil ingredients, and thus can avoid micro-plastic issues.

Abstract: Disclosed are a three-dimensional flash memory for improving contact resistance of IGZO channel layer and a method for manufacturing same. According to one embodiment, the three-dimensional flash memory may comprise: multiple word lines sequentially stacked and extending in a horizontal direction on a substrate; and at least one string extending in a vertical direction on the substrate through the multiple word lines, the at least one string comprising a channel layer extending in the vertical direction and a charge storage layer formed to surround the channel layer, wherein the at least one string comprises a drain junction formed in a dual structure and comprising an N+ doped first area on the channel layer and an N+ doped second area with a material having lower contact resistance than the channel layer.

Abstract: Various embodiments pertain to a high mobility transistor element resulting from IGTO oxide semiconductor crystallization, and a production method for same, the transistor element comprising a substrate and a crystalline IGTO channel layer disposed on the substrate, and being produced by converting a non-crystalline IGTO channel layer provided on the substrate to a crystalline IGTO channel layer.

Abstract: A pressurization type method for manufacturing elementary metal may include a metal precursor gas pressurization dosing operation of, in a state where an outlet of a chamber having a substrate is closed, increasing a pressure in the chamber by providing a metal precursor gas consisting of metal precursors, thereby adsorbing the metal precursors onto the substrate, a main purging operation of purging a gas after the metal precursor gas pressurization dosing operation, a reaction gas dosing operation of providing a reaction gas to reduce the metal precursors adsorbed on the substrate to elementary metal, after the main purging operation, and a main purging operation of purging a gas after the reaction gas dosing operation.

Abstract: Disclosed is an odor removal device. The odor removal device includes: a case; an activation device installed in the case and coming into contact with an object to activate surrounding materials according to a dielectric barrier discharge principle, wherein the activation device includes: a dielectric having an outer surface exposed to an outside and provided as a curved surface; and an electrode positioned inside the dielectric in which power is applied to the electrode.