Abstract: When removing a laminar deposit existing in a thin film forming operational system of a semiconductor manufacturing apparatus, a mixture gas prepared by mixing nitrogen trifluoride gas with a fluoric gas is introduced into the thin film forming operational system so as to be brought into contact in a non-plasma state with the laminar deposit.
Type:
Grant
Filed:
May 2, 1994
Date of Patent:
June 6, 1995
Assignee:
Iwatani Sangyo Kabushiki Kaisha (Iwatani International Corp)
Abstract: In a mold material for use in molding a titanium cast to be mounted into the mouth as a dental prosthesis, magnesia and phosphate are added as a binder to its main ingredient composed of alumina and zirconia.
Type:
Grant
Filed:
August 3, 1990
Date of Patent:
May 5, 1992
Assignee:
Iwatani Sangyo Kabushiki Kaisha (Iwatani International Corp.)