Patents Assigned to Iwatani Sangyo Kabushiki Kaisha (Iwatani International Corp.)
  • Patent number: 5421902
    Abstract: When removing a laminar deposit existing in a thin film forming operational system of a semiconductor manufacturing apparatus, a mixture gas prepared by mixing nitrogen trifluoride gas with a fluoric gas is introduced into the thin film forming operational system so as to be brought into contact in a non-plasma state with the laminar deposit.
    Type: Grant
    Filed: May 2, 1994
    Date of Patent: June 6, 1995
    Assignee: Iwatani Sangyo Kabushiki Kaisha (Iwatani International Corp)
    Inventors: Hideki Odajima, Chitoshi Nogami, Masanori Suzuki, Manabu Saeda
  • Patent number: 5110357
    Abstract: In a mold material for use in molding a titanium cast to be mounted into the mouth as a dental prosthesis, magnesia and phosphate are added as a binder to its main ingredient composed of alumina and zirconia.
    Type: Grant
    Filed: August 3, 1990
    Date of Patent: May 5, 1992
    Assignee: Iwatani Sangyo Kabushiki Kaisha (Iwatani International Corp.)
    Inventors: Akira Kuwano, Yoshimasa Kidowaki