Abstract: A semiconductor device includes a lead frame, an electronic device, a package body, and a first shield plate. The lead frame includes a die mount structure, signal leads, a first shield lead, a second shield lead, and a first shield mount that spans the first and second shield leads. The electronic device can be mounted to the die mount structure and can be coupled to the signal leads. The package body encapsulates the electronic device and the lead frame such that (i) each of the first shield lead, the second shield lead, and the signal leads includes an external portion that extends beyond the exterior surface of the package body, and (ii) the first shield mount extends beyond the exterior surface of the package body. The first shield plate can be coupled to the first shield mount.

Abstract: A packaged electronic device includes a substrate comprising a die pad and a lead spaced apart from the die. An electronic device is attached to the die pad top side. A conductive clip is connected to the substrate and the electronic device, and the conductive clip comprises a plate portion attached to the device top side with a conductive material, a clip connecting portion connected to the plate portion and the lead, and channels disposed to extend inward from a lower side of the plate portion above the device top side. The conductive material is disposed within the channels. In another example, the plate portion comprises a lower side having a first sloped profile in a first cross-sectional view such that an outer section of the first sloped profile towards a first edge portion of the plate portion is spaced away from the electronic device further than an inner section of the first sloped profile towards a central portion of the plate portion. Other examples and related methods are also disclosed herein.

Abstract: A semiconductor package includes a die pad; a plurality of external connection terminals located around the die pad; a semiconductor chip located on a top surface of the die pad and electrically connected with the plurality of external connection terminals; and a sealing member covering the die pad, the plurality of external connection terminals and the semiconductor chip and exposing an outer terminal of each of the plurality of external connection terminals. A side surface of the outer terminal of each of the plurality of external connection terminals includes a first area, and the first area is plated.

Abstract: Provided is a wiring substrate and its manufacturing method in which a thick wiring layer capable of being applied with a large current and a thin wiring layer capable of being subjected to microfabrication coexist in the same layer. The wiring substrate includes: an insulating film located over a first wiring and having a via; and a second wiring over the insulating film. The second wiring has a stacked structure including a first layer and a second layer covering the first layer. The second layer is in direct contact with the first wiring in the via. A thickness of the second layer in a region overlapping with the first layer is different from a thickness of the second layer in the via.

Abstract: A semiconductor package includes a die pad; a plurality of external connection terminals located around the die pad; a semiconductor chip located on a top surface of the die pad and electrically connected with the plurality of external connection terminals; and a sealing member covering the die pad, the plurality of external connection terminals and the semiconductor chip and exposing an outer terminal of each of the plurality of external connection terminals. A side surface of the outer terminal of each of the plurality of external connection terminals includes a first area, and the first area is plated.

Abstract: A semiconductor package includes a substrate having at least one recessed portion, a semiconductor device located on a surface of the substrate, the surface having the at least one recessed portion, and a resin insulating layer covering the semiconductor device.

Abstract: A manufacturing method of a semiconductor package includes locating a plurality of semiconductor packages on a substrate, forming a resin insulating layer covering the plurality of semiconductor devices, forming grooves, in the resin insulating layer, enclosing each of the plurality of semiconductor devices and reaching the substrate, and irradiating the substrate with laser light in positional correspondence with the grooves to separate the plurality of semiconductor devices from each other.

Abstract: A press fitting head comprising an elastic member in a part where the press fitting head contacts a semiconductor device, and an alignment mark recognition area capable of detecting an optically readable marker provided on a surface to be contacted to the semiconductor device is provided. Additionally, a semiconductor manufacturing apparatus in which the press fitting head is applied is provided.

Abstract: A semiconductor device in which an insulating material layer contains no reinforced fibers such as a glass cloth or a nonwoven cloth and which enables miniaturization of metal thin-film wiring layers, a reduction in the diameter of metal vias, and a reduction in interlayer thickness. The semiconductor device includes an insulating material layer including one or more semiconductor elements sealed with an insulating material containing no reinforced fibers, a plurality of metal thin-film wiring layers, metal vias that electrically connect the metal thin-film wiring layers together and electrodes of the semiconductor elements and the metal thin-film wiring layers together, and a warpage adjustment layer arranged on one principal surface of the insulating material layer to offset warpage of the insulating material layer to reduce warpage of the semiconductor device.

Abstract: A semiconductor device includes a lead frame; a circuit board located on the lead frame; a power device that includes a switching element and is mounted on the circuit board via a bump located between the power device and the circuit board; and a heat releasing member connected to the power device. The circuit board may be a multi-layer wiring board. The circuit board may include a capacitor element, a resistor element, an inductor element, a diode element and a switching element.

Abstract: A manufacturing method of a semiconductor package includes etching a first surface and a side surface of a base substrate, the base substrate including the first, a second and the side surfaces positioned between the first and the second surfaces, the base substrate containing a metal, attaching a metal different from the metal contained in the base substrate to the first and the side surfaces, disposing a semiconductor device on the second surface, the semiconductor device having an external terminal, forming a resin insulating layer sealing the semiconductor device, forming a first conductive layer on the resin insulating layer, forming an opening, exposing the external terminal, in the first conductive layer and the resin insulating layer; and forming a metal layer on the first and the side surfaces, on the first conductive layer and in the opening.

Abstract: A semiconductor manufacturing apparatus comprises a stage connected to a vacuum generator to suction a semiconductor wafer including a plurality of semiconductor chips, a suction control unit connected to a connecting portion of the stage and the vacuum generator to control the connection of the stage and the vacuum generator, a pickup unit connected to a movement control unit simultaneously picking up the plurality of semiconductor chips, and a control unit controlling movement and rotation of the pickup unit and controlling the suction control unit, the control unit is connected to the movement control unit. The pickup unit converts an interval of the plurality of semiconductor chips to a predetermined pitch and holds the pitch. The pickup unit moves the plurality of semiconductor chips from the stage to mounting positions of a supporting substrate and simultaneously adheres the plurality of semiconductor chips at the mounting positions by the control unit.

Abstract: A stacked semiconductor package in an embodiment includes a first semiconductor package including a first circuit board and a first semiconductor element mounted on the first circuit board; and a second semiconductor package including a second circuit board and a second semiconductor element mounted on the second circuit board, the second semiconductor package being stacked on the first semiconductor package. The first semiconductor package further includes a sealing resin sealing the first semiconductor element; a conductive layer located in contact with the sealing resin; and a thermal via connected to the conductive layer and located on the first circuit board.

Abstract: A manufacturing method of a semiconductor package includes locating, on a substrate, a semiconductor device having an external terminal provided on a top surface thereof, forming a resin insulating layer covering the semiconductor device, forming an opening, exposing the external terminal, in the resin insulating layer, performing plasma treatment on a bottom surface of the opening, performing chemical treatment on the bottom surface of the opening after the plasma treatment, and forming a conductive body to be connected with the external terminal exposed in the opening.

Abstract: A semiconductor package includes a first semiconductor device provided on a support substrate; a first encapsulation material covering the first semiconductor device; a first line provided on the first encapsulation material, the first line being connected with the first semiconductor device; an intermediate buffer layer covering the first line, and a second encapsulation material provided on the intermediate buffer layer. The first encapsulation material and the second encapsulation material are each formed of an insulating material different from an insulating material used to form the intermediate buffer layer. A second semiconductor device covered with the second encapsulation material may be provided on the intermediate buffer layer.

Abstract: An object of the present invention is to provide a semiconductor package with which it is possible to reduce a volume of an encapsulation resin and to easily embed a resin regardless of thicknesses of semiconductor chips and a small distance between adjacent semiconductor chips, as well as to provide a thin semiconductor package with which a final product includes no support flat plate. To realize this, a semiconductor package having a structure wherein semiconductor chips are accommodated in cavity parts of a support which is formed by copper plating and includes the cavity parts is provided.

Abstract: A semiconductor package includes a die pad; a plurality of external connection terminals located around the die pad; a semiconductor chip located on a top surface of the die pad and electrically connected with the plurality of external connection terminals; and a sealing member covering the die pad, the plurality of external connection terminals and the semiconductor chip and exposing an outer terminal of each of the plurality of external connection terminals. A side surface of the outer terminal of each of the plurality of external connection terminals includes a first area, and the first area is plated.

Abstract: An interconnect structure in which the current capacity of an interconnect pattern involving a large amount of current is increased without preventing the miniaturization of signal lines and increasing the film thickness. The interconnect structure includes a resin layer; and interconnects formed on the resin layer, wherein the resin layer has a plurality of parallel grooves in an area in which the interconnects are formed, and the interconnects are formed of a plating film created on a resin layer front surface in the area, in which the interconnects are formed, and on inner wall surfaces of the plurality of grooves.

Abstract: A semiconductor device is provided including a package substrate, and a plurality of semiconductor chips stacked above the package substrate, at least one of the plurality of semiconductor chips including a step part in a periphery edge part of a rear surface.

Abstract: Thermal resistance is reduced from an element surface of a semiconductor chip to the rear surface of a semiconductor package. Split patterning of a metal is easily carried out, stress produced by a thermal expansion coefficient between silicon and metal is significantly reduced and environment reliability is improved. Low cost is realized by manufacturing a semiconductor package without using a TIM material. A semiconductor package is provided including a semiconductor chip including a first surface and a second surface opposed to the first surface and covered with a resin, an electrode being arranged over the first surface, a first wiring connected to the first surface directly or via a first opening arranged in the resin, and a second wiring connected to the second surface via a second opening arranged in the resin.