Abstract: The present invention provides a chemical metal polishing (CMP) method with improved flexibility and improved processing window, especially as it relates to the chemical aspect of CMP technology. Broadly speaking, the invention has two aspects: according to one aspect, the invention provides a new CMP composition, comprising as an oxidizer, at least one of inorganic halogen derivative and dissolved oxygen while in a second aspect the invention provides an improved method for polishing metals.
Abstract: This invention discloses fixed abrasive chemical mechanical polishing pads, wherein the pad itself comprises at least one material selected from the group consisting of oxidants, wetting agents and other additives normally delivered via a polishing slurry, which assist in the polishing effectiveness of the pad. The improved polishing pad provides both the benefit of a fixed abrasive and the benefits of slurry based polishing systems.
Abstract: A method for improving the electrical conductivity and appearance of copper films produced by reduction of copper ions using hypophosphite, comprising exposure of the as-deposited copper film to a solution of dimethylamino borane (DMAB) or equivalents thereof.