Abstract: A liquid crystal display device comprises a sandwich structure of support plates with a layer of liquid crystal filled therebetween. One support plate has an array of thin film transistors and thin film capacitors both formed thereon, while the other support plate has a counter electrode formed thereon. One of a pair of electrodes of each thin film capacitor on the one support plate is offset from the counter electrode at any area other than area where they form an effective capacitance element, the other the area where they form an effective capacitance element, the other capacitor electrodes serving as display electrodes.

Abstract: A thin film transistor comprises an insulating substrate, a semiconductor layer on the substrate, an electrically insulating oxide layer overlaying the semiconductor layer, and an electroconductive layer overlaying the oxide layer. The oxide layer is formed by oxidizing a portion of the semiconductor through a patterned opening in a photo resist. A method for the manufacture of the same is also disclosed.

Abstract: A method for making a thin-film transistor wherein a gate insulating layer is formed by anodizing two oxide layers on the substrate and then etching the assembly to completely remove the uppermost one of these layers to leave the lowermost layer so as to serve as the gate insulating layer.

Abstract: A sintered body for a humidity sensor is formed by baking a blend at 1,000.degree. to 1,400.degree. C., the blend comprising ZnO, Cr.sub.2 O.sub.3, V.sub.2 O.sub.5 and M.sub.2 O where M.sub.2 O is at least one metal oxide selected from Li.sub.2 O, Na.sub.2 O and K.sub.2 O. A pair of electrodes are each attached to the corresponding surface of the sintered body to obtain a humidity sensor of metal oxide which is relatively low in its resistive value and stable in its aging characteristic.

Abstract: A method of forming a thin-film pattern such as a thin-film circuit component comprises successive formation of a first metal layer and then a photo resist layer on a substrate by the utilization of a photoetching technique. The substrate having the first metal layer and the photo resist layer on the top of the first metal layer is deposited with second metal layers which are discontinued from each other, one of the second metal layers being deposited on the top of the photo resist layer while the other of the second metal layers is deposited directly on the substrate around the first metal layer. The substrate assembly is then immersed into a solvent bath to remove the photo resist layer together with the second metal layer resting thereon and is thereafter immersed into an etchant bath to remove the first metal layer, leaving the second metal layer on the substrate.

Abstract: A thin film transistor comprising a substrate having source and drain electrodes formed thereon, a semiconductor layer making contact in part with the source electrode and in part with the drain electrode, a gate electrode, and a gate insulating layer positioned between the semiconductor layer and the gate electrode is disclosed. A portion of the drain electrode is held in overlapping relation to a portion of the gate electrode while a portion of the source electrode is spaced apart from said gate electrode.