Patents Assigned to Japan Science and Technology Agency
  • Patent number: 11565253
    Abstract: A nano-fluidic device includes: a first substrate that has a nanoscale groove on one surface; and a second substrate that is integrally provided with the first substrate by bonding one surface of the second substrate to the one surface of the first substrate and forms a nanochannel with the groove of the first substrate, in which either the first substrate or the second substrate includes at least a thin portion in a part of a position overlapping the nanochannel in plan view, and the thin portion is deformed by pressing to open and close the nanochannel.
    Type: Grant
    Filed: October 21, 2016
    Date of Patent: January 31, 2023
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Yutaka Kazoe, Yuriy Pihosh, Takehiko Kitamori
  • Patent number: 11560383
    Abstract: Provided is a compound having higher fluorescence quantum yield and higher optical stability than a conventional FLAP and a polymer compound containing the compound. A: seven or eight-membered ring structure, Y1, Y2, Y3: halogen atom or the like, a1: number of Y1, a2: number of Y2, B: number of Y3, 0?m and n?3: when 1?m?3, Y1 may be substituted with a structure portion defined by m, when 1?n?3, Y2 may be substituted with a structure portion defined by n, and B1, B2: Formulas (2-1) to (2-3). C1, C2, C3: structure containing a cyclic hydrocarbon compound, D1, D2, D3: substructure that inhibits aggregation, E1, E2, E3: polymerizable substructure, Z1: hydrogen atom or the like, c: number of substituent groups Z1, Z2, Z3: hydrogen atom or the like, and may form a ring with C2.
    Type: Grant
    Filed: March 4, 2019
    Date of Patent: January 24, 2023
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Shohei Saito, Hiroshi Yabu, Hiroya Abe
  • Patent number: 11549172
    Abstract: A compound semiconductor has a high electron concentration of 5×1019 cm?3 or higher, exhibits an electron mobility of 46 cm2/V·s or higher, and exhibits a low electric resistance, and thus is usable to produce a high performance semiconductor device. The present invention provides a group 13 nitride semiconductor of n-type conductivity that may be formed as a film on a substrate having a large area size at a temperature of room temperature to 700° C.
    Type: Grant
    Filed: November 2, 2020
    Date of Patent: January 10, 2023
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hiroshi Fujioka, Kohei Ueno
  • Patent number: 11547338
    Abstract: An electronic functional member according to the present embodiment includes a substrate; a fiber mesh comprising a fibrous resin composition that extends onto and is connected to the substrate; and a patterned conductive coating portion that coats one surface of a portion of the fiber mesh and that also extends onto the substrate.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: January 10, 2023
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Sung Won Lee, Takao Someya, Tsuyoshi Sekitani, Shinri Sakai
  • Publication number: 20230001398
    Abstract: Disclosed herein is a method for selectively reducing, using electrical energy, CO2 to carbon monoxide or formic acid, a catalyst for use in the method, and an electrochemical reduction system.
    Type: Application
    Filed: August 9, 2022
    Publication date: January 5, 2023
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventor: Osamu ISHITANI
  • Publication number: 20220406370
    Abstract: A bistable circuit includes a pair of inverter circuits each including a first FET being connected between a power supply line and an intermediate node and having a gate coupled to an input node and a first conductivity type channel, a second FET being connected between the intermediate node and an output node and having a gate coupled to the input node and the first conductivity type channel, a third FET being connected between the intermediate node and a bias node, a fourth FET being connected between the output node and a control line and having a gate coupled to a word line and a second conductivity type channel, wherein the pair of inverter circuits are connected in a loop shape, and gates of the third FETs of the pair of inverter circuits are coupled to one of the input and output nodes of the pair of inverter circuits.
    Type: Application
    Filed: July 29, 2022
    Publication date: December 22, 2022
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Satoshi Sugahara, Yusaku Shiotsu
  • Patent number: 11529794
    Abstract: A heteroepitaxial structure includes a first metal portion having a polycrystalline structure, a second metal portion on the first metal portion, the second metal portion has an island-shaped structure on the first metal portion, the second metal portion is provided corresponding to at least one crystalline grain exposed to a surface of the first metal portion, and the second metal portion and the at least one crystalline grain have a heteroepitaxial interface.
    Type: Grant
    Filed: March 26, 2021
    Date of Patent: December 20, 2022
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Yutaka Majima, YoonYoung Choi, Ikuko Shimada, Ryo Toyama, Mingyue Yang
  • Publication number: 20220393563
    Abstract: A current sensor includes an element that is in a high-resistance state when an absolute value of a current flowing between a first terminal and a second terminal is within a first range, and changes to a low-resistance state in which a resistance value is lower than that in the high-resistance state when the absolute value of the current exceeds the first range, and a circuit that supplies a current to be measured to the element, and senses a value of the current to be measured based on at least one of voltages of the first terminal and the second terminal.
    Type: Application
    Filed: October 28, 2020
    Publication date: December 8, 2022
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Takeaki Yajima, Akira Toriumi
  • Patent number: 11512168
    Abstract: Provided are a hydrophilic polyamide and polyimide retaining characteristics particular to polyamides and polyimides, such as heat resistance. A polymeric compound is provided having a repeating unit represented by the following formula (1): wherein M1 and M2 each independently represent any one selected from the group consisting of a hydrogen atom, a monovalent metal atom, an alkaline earth metal atom and an ammonium ion, provided that M1 and M2 are not a hydrogen atom at the same time; X1 and X2 represent an organic group; m and n each independently represent the number of substituents; Z1 represents a hydrogen atom or an optionally substituted carbonyl group; Z2 represents an optionally substituted hydrocarbon group; Z3 represents a hydrogen atom or an optionally substituted carbonyl group; and when Z1 or Z3 is an optionally substituted carbonyl group, they optionally form a ring structure together with Z2, each independently.
    Type: Grant
    Filed: July 27, 2018
    Date of Patent: November 29, 2022
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Tatsuo Kaneko, Sumant Dwivedi, Shigeki Sakamoto, Kenji Takada, Yasuyoshi Funahashi
  • Publication number: 20220376681
    Abstract: A spike generation circuit includes a first CMOS inverter connected between a first power supply and a second power supply, an output node of the first CMOS inverter being coupled to a first node that is an intermediate node coupled to an input terminal to which an input signal is input, a switch connected in series with the first CMOS inverter, between the first power supply and the second power supply, a first inverting circuit that outputs an inversion signal of a signal of the first node to a control terminal of the switch, and a delay circuit that delays the signal of the first node, outputs a delayed signal to an input node of the first CMOS inverter, and outputs an isolated output spike signal to an output terminal.
    Type: Application
    Filed: August 4, 2022
    Publication date: November 24, 2022
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventor: Takeaki Yajima
  • Publication number: 20220376682
    Abstract: A spike generation circuit includes a first CMOS inverter connected between a first power supply and a second power supply, an output node of the first CMOS inverter being coupled to a first node that is an intermediate node coupled to an input terminal to which an input signal is input, a switch connected in series with the first CMOS inverter, between the first power supply and the second power supply, a first inverting circuit that outputs an inversion signal of a signal of the first node to a control terminal of the switch, and a delay circuit that delays the signal of the first node, outputs a delayed signal to an input node of the first CMOS inverter, and outputs an isolated output spike signal to an output terminal.
    Type: Application
    Filed: August 4, 2022
    Publication date: November 24, 2022
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventor: Takeaki Yajima
  • Patent number: 11492432
    Abstract: Provided is a resin for nanoimprinting, which is capable of preventing removal of a transfer-receiving resin from a substrate when a mold is separated during nanoimprinting, and which is also capable of transferring a pattern on a mold to a transfer-receiving resin with high accuracy during thermal nanoimprinting, while improving the throughput. A resin for nanoimprinting, which is represented by formula (1). (In the formula, each of R1-R5 independently represents —H or —OH, and at least one of the R1-R5 moieties represents —OH; R6 represents a linear, branched or cyclic alkyl group having 1-20 carbon atoms, an aryl group having 6-20 carbon atoms or an aralkyl group having 7-20 carbon atoms; X represents an amide or an ester; Y may be absent, or represents an amide or an ester; P represents an integer of 1-10; and each of m and n represents an integer of 1 or more.
    Type: Grant
    Filed: March 13, 2020
    Date of Patent: November 8, 2022
    Assignee: Japan Science and Technology Agency
    Inventors: Hiroshi Yabu, Yuta Saito
  • Publication number: 20220332594
    Abstract: The invention provides a method for producing sheet-like particles of zeolite that cannot be obtained by a top-down method, and provides sheet-like particles of zeolite having an 8-membered oxygen ring structure obtained by the method. A thickness of the sheet-like particles is 1 nm to 100 nm, and an aspect ratio (maximum width/thickness in particles) of the sheet-like particles is 100 or more.
    Type: Application
    Filed: June 11, 2020
    Publication date: October 20, 2022
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Yoshiaki UCHIDA, Koki SASAKI, Norikazu NISHIYAMA
  • Publication number: 20220305474
    Abstract: Disclosed herein is a method for selectively reducing, using electrical energy, CO2 to formic acid, a catalyst for use in the method, and an electrochemical reduction system.
    Type: Application
    Filed: June 8, 2022
    Publication date: September 29, 2022
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventor: Osamu ISHITANI
  • Publication number: 20220305473
    Abstract: Disclosed herein is a method for selectively reducing, using electrical energy, CO2 to carbon monoxide, a catalyst for use in the method, and an electrochemical reduction system.
    Type: Application
    Filed: June 8, 2022
    Publication date: September 29, 2022
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventor: Osamu ISHITANI
  • Patent number: 11456406
    Abstract: Provided is a silicon bulk thermoelectric conversion material in which thermoelectric performance is improved by reducing the thermal conductivity as compared with the prior art. In the silicon bulk thermoelectric conversion material, the ZT is greater than 0.2 at room temperature with the elemental silicon. In the silicon bulk thermoelectric conversion material, a plurality of silicon grains have an average of 1 nm or more and 300 nm or less, a first hole have an average of 1 nm or more and 30 nm or less present in the plurality of silicon grains and surfaces of the silicon grains, and a second hole have an average of 100 nm or more and 300 nm or less present between the plurality of silicon grains, wherein the aspect ratio of a crystalline silicon grain is less than 10.
    Type: Grant
    Filed: December 26, 2018
    Date of Patent: September 27, 2022
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Junichiro Shiomi, Makoto Kashiwagi, Takashi Kodama
  • Publication number: 20220287294
    Abstract: An object of the present invention is to provide an agent for promoting undifferentiation that dissolves a drug, as DMSO or the like does, but is capable of promoting undifferentiation without inducing cell differentiation when added to a medium. The agent for promoting undifferentiation of the present invention has an aprotic zwitterion represented by the following formula (1) wherein A is an anion selected from the group consisting of SO3?, —COO?, —OP?O(H)O?, —OP?O(CH3)O? and —OP?O(OR3)O?, R1 is an alkyl group having 1 to 8 carbon atoms and optionally containing one or two oxygen atoms in the molecular chain, R2 is an alkylene group having 3 to 5 carbon atoms, and R3 is hydrogen or an alkyl group optionally having a heteroatom in the molecular chain.
    Type: Application
    Filed: May 8, 2020
    Publication date: September 15, 2022
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Kosuke KURODA, Eishu HIRATA
  • Patent number: 11444605
    Abstract: A spike generation circuit includes a first CMOS inverter connected between a first power supply and a second power supply, an output node of the first CMOS inverter being coupled to a first node that is an intermediate node coupled to an input terminal to which an input signal is input, a switch connected in series with the first CMOS inverter, between the first power supply and the second power supply, a first inverting circuit that outputs an inversion signal of a signal of the first node to a control terminal of the switch, and a delay circuit that delays the signal of the first node, outputs a delayed signal to an input node of the first CMOS inverter, and outputs an isolated output spike signal to an output terminal.
    Type: Grant
    Filed: August 23, 2021
    Date of Patent: September 13, 2022
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventor: Takeaki Yajima
  • Patent number: 11433378
    Abstract: Provided are an intermetallic compound having high stability and high activity, and a catalyst using the same. A hydrogen storage/release material containing an intermetallic compound represented by formula (1): RTX . . . (1) wherein R represents a lanthanoid element, T represents a transition metal in period 4 or period 5 in the periodic table, and X represents Si, Al or Ge.
    Type: Grant
    Filed: July 12, 2018
    Date of Patent: September 6, 2022
    Assignees: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Yutong Gong, Jiazhen Wu, Masaaki Kitano, Toshiharu Yokoyama, Yangfan Lu, Tiannan Ye
  • Publication number: 20220269968
    Abstract: A quantum gate device includes a first superconducting circuit which resonates at a first resonance frequency, second superconducting circuit which resonates at a second resonance frequency, and connector which connects these circuits. The first superconducting circuit includes a single first Josephson device, second Josephson device group, and first capacitor. The second Josephson device group includes n Josephson devices connected by a line made of a superconductor. The Josephson energy possessed by each of the n Josephson devices is greater than n times that of the first Josephson device.
    Type: Application
    Filed: February 28, 2020
    Publication date: August 25, 2022
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Atsushi NOGUCHI, Yasunobu NAKAMURA