Patents Assigned to JAPAN SCIENCE AND TECHNOLOGY POLICY
  • Compound semiconductor, method for manufacturing same, and nitride semiconductor
    Patent number: 10865469
    Abstract: A compound semiconductor has a high electron concentration of 5×1019 cm?3 or higher, exhibits an electron mobility of 46 cm2/V·s or higher, and exhibits a low electric resistance, and thus is usable to produce a high performance semiconductor device. The present invention provides a group 13 nitride semiconductor of n-type conductivity that may be formed as a film on a substrate having a large area size at a temperature of room temperature to 700° C.
    Type: Grant
    Filed: June 1, 2017
    Date of Patent: December 15, 2020
    Assignee: JAPAN SCIENCE AND TECHNOLOGY POLICY
    Inventors: Hiroshi Fujioka, Kohei Ueno