Patents Assigned to Japan Science & Technology Corp.
  • Patent number: 7056483
    Abstract: A bed of calcium oxide and/or barium oxide in particulate form is continuously moved through a contact reaction zone such that it enters into countercurrent reaction with the feedstock and the reaction is performed in a reaction column equipped with an agitating/moving device by which the halide which is the product of reaction between the organic halide and the oxide is continuously discharged to the outside of the reaction zone.
    Type: Grant
    Filed: May 4, 2004
    Date of Patent: June 6, 2006
    Assignees: Morikawa Industries Corp., Japan Science & Technology Corp.
    Inventors: Taneaki Yahata, Yuji Tsuchiya, Masahiko Toba
  • Patent number: 6896731
    Abstract: The present invention provides a low-resistivity p-type single-crystal zinc oxide. An n-type dopant and p-type dopant are doped into zinc oxide with higher concentration of the p-type dopant than that of the n-type dopant during forming a single-crystal of the zinc oxide through a thin film forming process. Further, an element of the second group is co-doped to allow oxygen to be stabilized.
    Type: Grant
    Filed: July 4, 2000
    Date of Patent: May 24, 2005
    Assignee: Japan Science and Technology Corp.
    Inventors: Tetsuya Yamamoto, Hiroshi Yoshida, Takafumi Yao
  • Patent number: 6878962
    Abstract: The present invention provides a high quality thin film comparable to a bulk single crystal and providres a semiconductor device with superior characteristics. A channel layer 11, for example, is formed of a semiconductor such as zinc oxide ZnO or the like. A source 12, a drain 13, a gate 14 and a gate insulating layer 15 are formed on the channel layer 111 to form an FET. For a substrate 16, a proper material is selected depending on a thin film material of the channel layer 11 in consideration of compatibility of both lattice constants. For example, if ZnO is used for the semiconductor of the channel layer as a base material, ScAlMgO4 or the like can be used for the substrate 16.
    Type: Grant
    Filed: March 22, 2000
    Date of Patent: April 12, 2005
    Assignee: Japan Science and Technology Corp.
    Inventors: Masashi Kawasaki, Hideo Ohno, Akira Ohtomo
  • Patent number: 6676804
    Abstract: An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies 112a and 112b are detected by first˜third temperature sensors 142, 144 and 146. A controller 140 controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck 108 via first gas outlet ducts 114 and to the space between the outer edges of the wafer W and the electrostatic chuck 108 via second gas outlet ducts 116 and the quantity of heat generated by a heater 148 inside the outer ring body 112b based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body 112a are set roughly equal to each other.
    Type: Grant
    Filed: January 2, 2001
    Date of Patent: January 13, 2004
    Assignees: Tokyo Electron AT Limited, Japan Science and Technology Corp.
    Inventors: Chishio Koshimizu, Hiroyuki Ishihara, Kimihiro Higuchi, Koji Maruyama
  • Patent number: 6375756
    Abstract: A method for efficiently and completely removing a film deposited inside a film forming chamber and an in-situ cleaning method of a hot element CVD apparatus. A hot element is disposed in a chamber is heated up to a temperature of 2000° C. or higher after the chamber is exhausted. Thereafter a cleaning gas which is decomposed and/or activated by the hot element to generate an activated species that converts the deposited film into gaseous substance is introduced into the chamber.
    Type: Grant
    Filed: August 4, 2000
    Date of Patent: April 23, 2002
    Assignees: ANELVA Corporation, Japan Science and Technology Corp.
    Inventor: Keiji Ishibashi
  • Patent number: 6336316
    Abstract: A heat engine is provided that can improve thermal efficiency of a gas turbine . When gas such as air enters a compressor C101 of a gas turbine apparatus 100 (state 1), the gas becomes high-temperature gas by a combustor B102 (state 3) and moves toward a turbine T103. Another turbine T104 is placed at the back portion of the turbine T103 where air of state 3 enters, the gas enters a first heat exchanger Hx 105 (state 4) and is supplied to a compressor C109 (state 5). Thereafter, the supplied gas is discharged from a compressor C112 (state 12) through a heat exchanger Hx106 of an intercooling portion 151, a compressor C110, a heat exchanger Hx107, a compressor C111, and a heat exchanger Hx108 (states 6 to 11).
    Type: Grant
    Filed: September 18, 2000
    Date of Patent: January 8, 2002
    Assignee: Japan Science and Technology Corp.
    Inventors: Shoichi Fujii, Yoshiharu Tsujikawa, Kenichi Kaneko
  • Patent number: 6274561
    Abstract: Antitumor agent which comprises as the principal agent a mixture of organic compounds having amino group and silyl group (reffered to as silamines) and represented by structural formulae with Adriamycin. Use of silamines in the form of a mixture with Adriamycin, which is an anti-cancer agent showing a potent effect but having extremely serious side effects, makes it possible to highly potentiate the anti-cancer properties of Adriamycin. As a result, the dose of Adriamycincan be reduced and thus its side effects can be relatively relieved as compared with the case where it is used alone. [wherein R1, R2, R3, R4, R5, R6, R7 and R8 represent each hydrogen or C1-10 alkyl, aryl or aralkyl, or the pair of R1 with R2 and that of R5 with R6 may be bonded via alkylene, allylene or aralkylene.
    Type: Grant
    Filed: January 4, 1999
    Date of Patent: August 14, 2001
    Assignee: Japan Science & Technology Corp.
    Inventors: Masao Kato, Kazunori Kataoka, Yukio Nagasaki, Tsutomu Takezawa
  • Patent number: 6265327
    Abstract: Disclosed are a method and apparatus for forming an insulating film on the surface of a semiconductor substrate capable of improving the quality and electrical properties of the insulating film with no employment of high-temperature heating and with good controllability. After the surface of a silicon substrate is cleaned, a silicon dioxide film having a thickness of 1-20 nm is formed on the substrate surface. The silicon substrate is exposed to plasma generated by electron impact, while the silicon substrate is maintained at a temperature of 0° C. to 700° C. Thus, nitrogen atoms are incorporated into the silicon dioxide film, obtaining a modified insulating film having good electrical properties.
    Type: Grant
    Filed: June 17, 1998
    Date of Patent: July 24, 2001
    Assignees: Japan Science and Technology Corp., Matsushita Electronics Corp.
    Inventors: Hikaru Kobayashi, Kenji Yoneda
  • Patent number: 6263444
    Abstract: The present invention relates to a network unauthorized access analysis method, a network unauthorized access analysis apparatus utilizing this method and a computer-readable recording medium having a network unauthorized access analysis program recorded thereon, and is capable of processing arbitrary data, performing arbitrary communication between networks, easily dealing with an increase in a number of protocols and coping with arbitrary protocols.
    Type: Grant
    Filed: March 5, 1998
    Date of Patent: July 17, 2001
    Assignees: National Aerospace Laboratory of Science & Technology Agency, Japan Science & Technology Corp.
    Inventor: Naoyuki Fujita
  • Patent number: 6184381
    Abstract: This document describes a novel and practically excellent process for the preparation of optically active compounds, such as optically active alcohols or amines which are useful for various applications, for example, as synthetic intermediates of pharmaceuticals, liquid crystal materials, and reagents for optical resolution, wherein a hydrogen transfer type asymmetric reduction is carried out in the presence of both a transition metal complex and an optically active nitrogen compound or a transition metal complex having an optically active nitrogen compounds as an asymmetric ligand, and a hydrogen-donating organic or inorganic compound.
    Type: Grant
    Filed: September 29, 1998
    Date of Patent: February 6, 2001
    Assignees: Japan Science & Technology Corp., NKK Corp., Takeda Chemical Industries, Asahi Kasei Kogyo Kabushiki Kaisha, Takasago Intl. Corp.
    Inventors: Takao Ikariya, Shohei Hashiguchi, Jun Takehara, Nobuyuki Uematsu, Kazuhiko Matsumura, Ryoji Noyori, Akio Fujii
  • Patent number: 6180760
    Abstract: An actin filament-binding protein 1-Afadin having the amino acid sequence of SEQ ID NO: 1 or having an amino acid sequence substantially the same as that of SEQ ID NO: 1, a cDNA sequence encoding the protein, a genomic DNA sequence to which the cDNA sequence or a partial sequence thereof is hybridized, and an antibody specifically recognizing 1-Afadin are provided. The protein is a novel actin filament-binding protein localized at the cadherin based cell-to-cell adherens junction and the other products are useful as the genetic materials for industrially utilizing the protein.
    Type: Grant
    Filed: September 21, 1998
    Date of Patent: January 30, 2001
    Assignees: Japan Science and Technology Corp., Manabu Wada, Hiroshi Obaishi
    Inventors: Yoshimi Takai, Hiroyuki Nakanishi, Kenji Mandai, Manabu Wada, Hiroshi Obaishi
  • Patent number: 6154593
    Abstract: A glass 1 is irradiated with a focused pulsed laser beam 2 having a peak power density of 10.sup.5 W/cm.sup.2 or more and a repetition rate of 10 KHz or more. The glass 1 irradiated with the laser beam 2 changes its refractive index at the focal point 4. During the laser beam irradiation, the glass 1 is continuously moved with respect to the focal point of the pulsed laser beam 2 or continuously scanned with the focused laser beam 2, so as to form the refractive index changed region (i.e. an optical waveguide 5) with a predetermined pattern. The glass 1 in which the optical waveguide 5 will be formed may be any kind of glass having high transparency.
    Type: Grant
    Filed: June 15, 1999
    Date of Patent: November 28, 2000
    Assignees: Japan Science & Technology Corp, Kiyotaka Miura
    Inventors: Kiyotaka Miura, Kenneth M. Davis, Kazuyuki Hirao
  • Patent number: 6043068
    Abstract: The present invention relates to magnetic carriers in which microorganisms requiring carriers for their growth in the step of treating wastewater have been immobilized, a process for producing the carriers and a method of treating wastewater. The present invention provides microorganisms-immobilized carriers with a high amount of microorganisms immobilized for use in wastewater treatment, the movement of which is controllable in a treatment chamber by magnetic force. Further the present invention provides a process for producing said carriers easily and a method for treating wastewater efficiently.
    Type: Grant
    Filed: June 30, 1998
    Date of Patent: March 28, 2000
    Assignee: Japan Science and Technology Corp.
    Inventors: Takaaki Maekawa, Mitsuaki Kuroshima
  • Patent number: 5978538
    Abstract: A glass is irradiated with a focused pulsed laser beam having a peak power density of 10.sup.5 W/cm.sup.2 or more and a repetition rate of 10 KHz or more. The glass irradiated with the laser beam changes its refractive index at the focal point. During the laser beam irradiation, the glass is continuously moved with respect to the focal point of the pulsed laser beam or continuously scanned with the focused laser beam, so as to form the refractive index changed region (i.e. an optical waveguide) with a predetermined pattern. The glass in which the optical waveguide is formed may be any kind of glass having high transparency.
    Type: Grant
    Filed: March 17, 1997
    Date of Patent: November 2, 1999
    Assignees: Japan Science & Technology Corp., Kiyotaka Miura
    Inventors: Kiyotaka Miura, Kenneth M. Davis, Kazuyuki Hirao
  • Patent number: 5961745
    Abstract: The present invention is directed to provide a Fe based glassy alloy which exhibits soft magnetic characteristics at room temperature, has a thickness greater than that of a conventional amorphous alloy prepared by a liquid quenching process and can be easily formed in bulk. The Fe based glassy alloy in accordance with the present invention has a temperature distance .DELTA.T.sub.x, expressed by the equation .DELTA.T.sub.x =T.sub.x -T.sub.g, of a supercooled liquid of not less than 35.degree. C., wherein Tx indicates crystallization temperature and Tg represents glass transition temperature.
    Type: Grant
    Filed: March 26, 1997
    Date of Patent: October 5, 1999
    Assignees: Alps Electric Co., Ltd., Akihisa Inoue, Japan Science and Technology Corp.
    Inventors: Akihisa Inoue, Takao Mizushima, Kouichi Fujita, Oki Yamaguchi, Akihiro Makino
  • Patent number: 5898176
    Abstract: A high space resolving power of the scanning type probe microscope combined with an element analysis and the chemical bond condition analyzing ability of an Auger electronic spectroscopic method, and the energy analyzing results of the Auger electron generated by the high energy electron projection are considered, whereby it is possible to determine the three dimensional coordinate of the atomic nucleus of one atom of the surface, analyze the element thereof and analyze the chemical bond condition.
    Type: Grant
    Filed: September 16, 1997
    Date of Patent: April 27, 1999
    Assignee: Japan Science and Technology Corp.
    Inventors: Yuzo Mori, Masao Sakamoto