Patents Assigned to Japan Society for the Promotion of Science
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Patent number: 7192742Abstract: (Beauveria) sp. FO-6979 (FERM BP-6681), which belongs to the genus Beauveria and is capable of producing FO-6979-M0, -M1, -M2, -M3 and -M4 substances, is cultured in a medium to thereby accumulate the FO-6979-M0, -M1, -M2, -M3 and -M4 substances in the liquid culture medium. Then the FO-6979-M0, -M1, -M2, -M3 and -M4 substances are collected from the culture medium. The substances thus obtained are less toxic, specifically inhibit acyl-Coenzyme A: cholesterol acyltransferase, and inhibit the formation of oil droplets in macrophages. Owing to these characteristics, the above substances are useful in preventing and treating human diseases caused by cholesterol accumulation.Type: GrantFiled: March 19, 2002Date of Patent: March 20, 2007Assignees: Gakkou Houjin Kitasato Gakeun, Japan Society for the Promotion of ScienceInventors: Satoshi Omura, Hiroshi Tomoda
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Publication number: 20060282907Abstract: To provide meat that is beneficial to human health, for the purpose to produce transgenic animals in which the content of unsaturated fatty acids increase is increased, transgenic animals characterized by increased content of unsaturated fatty acids that are beneficial to human health is provided by the present invention. Furthermore, the present invention also provides a method to enhance levels of unsaturated fatty acid in animals.Type: ApplicationFiled: January 30, 2003Publication date: December 14, 2006Applicants: KINKI UNIVERSITY, JAPAN SOCIETY FOR THE PROMOTION OF SCIENCEInventors: Kazuhiro Saeki, Kazuya Matsumoto, Mikio Kinoshita, Iwane Suzuki, Yoshitomo Taguchi, Koji Mikami, Masatsugu Ueda, Yoshihiro Hosoi, Norio Murata, Akira Iritani, Kouichiro Kano
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Patent number: 7126194Abstract: On a silicon layer of an SOI wafer is defined a semiconductor device-forming region to form semiconductor devices thereon and an insulating region to electrically insulate the semiconductor device-forming region. Then, a mask layer is formed of nitride by means of photolithography so as to cover the semiconductor device-forming region. Then, an impurities-removing layer is formed by means of well known technique so as to cover the mask layer and embed the gaps between the adjacent masks of the mask layer. The impurities of the silicon layer of the SOI wafer are absorbed and removed by the distorted layer, the grain boundaries and the lattice defects of the impurities-removing layer.Type: GrantFiled: November 10, 2003Date of Patent: October 24, 2006Assignees: Hyogo Prefecture, Japan Society for the Promotion of ScienceInventors: Seigo Kishino, Hideki Tsuya
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Patent number: 7042198Abstract: EMI noise in a system using a power converter with switching control is reduced in a simple configuration. The power converter 3 includes a converter 31, a smoothing capacitor 32, and an inverter 33, and receives the power from an AC power supply 1 via an AC reactor 2 and converts it into a power of an optional frequency and voltage to supply to a motor 4. Damping impedance elements 6, 7, 8 are inserted between the frame of the motor 4 and the ground 5, between the cooling fin 34 of the power converter 3 and the ground 5, and between the AC reactor 2 and the ground 5, respectively. Further, paths between the AC reactor 2 and ground 5, between the power converter 3 and ground 5, and between the motor 4 and ground 5 are insulated except that the damping impedance elements 6, 7, 8 are inserted.Type: GrantFiled: August 23, 2002Date of Patent: May 9, 2006Assignees: Keio University, Japan Society for the Promotion of ScienceInventor: Nobuyoshi Mutoh
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Patent number: 7008572Abstract: This invention relates to a method of producing polymer spherical bodies and is to produce a large size spherical body having no residual strain. This method comprises suspending a liquid monomer in a supporting liquid having a magnetic susceptibility ?2 larger than a magnetic susceptibility ?1 of any one of the monomer and the resulting polymer and not dissolving substantially the monomer, and applying a gradient magnetic field to the supporting liquid to float droplets of the monomer at a given position in the supporting liquid, and polymerizing and solidifying the droplets while maintaining a state that the droplet is substantially shaped into a sphere through surface tension. This method is made possible to produce polymer spherical bodies capable of using in optical application and the like.Type: GrantFiled: February 7, 2002Date of Patent: March 7, 2006Assignee: Japan Society for the Promotion of ScienceInventors: Tsunehisa Kimura, Masafumi Yamato, Haruka Nakazawa
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Patent number: 6902065Abstract: Under a magnetic field gradient, solid particles floating and/or sinking in a supporting liquid (most suitably a paramagnetic one) are levitated or anti-levitated at different locations depending on their densities and diamagnetic susceptibilities.Type: GrantFiled: August 22, 2001Date of Patent: June 7, 2005Assignee: Japan Society for the Promotion of ScienceInventors: Tsunehisa Kimura, Shogo Mamada, Masafumi Yamato, Koichi Kitazawa
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Patent number: 6902925Abstract: The present invention is a process for selective production of beauveriolide I substance or beauveriolide III substance, in which a beauveriolide producing microorganism strain FO-6979 or mutant thereof is cultured in a medium for fungi added with specific amino acid in order to produce beauveriolide I substance or beauveriolide III substance selectively with high yield; beauveriolide I substance or beauveriolide III substance is accumulated selectively in the cultured mass; and beauveriolide I substance or beauveriolide III substance is collected selectively with high yield from said cultured mass.Type: GrantFiled: April 10, 2001Date of Patent: June 7, 2005Assignees: Gakkou Houjin Kitasato Gakuen, Japan Society for the Promotion of ScienceInventors: Satoshi Omura, Hiroshi Tomoda
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Patent number: 6818422Abstract: A microorganism capable of producing substances K97-0239 comprising K97-0239A represented by the following formula [I]: and K97-0239B represented by the following formula [II]: is cultured in a medium and the substances K97-0239 thus accumulated in the medium are collected from the culture medium. The obtained substances have a low toxicity and specifically inhibit the foaming of macrophages. Owing to these characteristics, they are useful in preventing and treating human arteriosclerosis and diseases caused thereby.Type: GrantFiled: October 1, 2003Date of Patent: November 16, 2004Assignees: Gakkou Houjin Kitasato Gakuen, Japan Society for the Promotion of ScienceInventors: Satoshi Omura, Hiroshi Tomoda
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Publication number: 20040150087Abstract: On a silicon layer of an SOI wafer is defined a semiconductor device-forming region to form semiconductor devices thereon and an insulating region to electrically insulate the semiconductor device-forming region. Then, a mask layer is formed of nitride by means of photolithography so as to cover the semiconductor device-forming region. Then, an impurities-removing layer is formed by means of well known technique so as to cover the mask layer and embed the gaps between the adjacent masks of the mask layer. The impurities of the silicon layer of the SOI wafer are absorbed and removed by the distorted layer, the grain boundaries and the lattice defects of the impurities-removing layer.Type: ApplicationFiled: November 10, 2003Publication date: August 5, 2004Applicants: HYOGO PREFECTURE, JAPAN SOCIETY FOR THE PROMOTION OF SCIENCEInventors: Seigo Kishino, Hideki Tsuya
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Publication number: 20030136740Abstract: Waste water to be treated is introduced into a first electrolytic bath, and then, hydroxide iron particles are supplied into the waste water through the electrolysis reaction at iron electrodes. Impurities such as organic compounds, phosphoric compounds, persistent compounds and the like are physically absorbed onto the hydroxide iron particles. Then, the hydroxide iron particles (flocks) with absorbed impurities are discharged via a drain valve, to purify the waste water to some degree. The waste water is introduced into a second electrolytic bath with a water pump. In the second electrolytic bath, the remnant impurities in the waste water are chemically dissolved and removed through the oxidation reduction reaction between the surfaces of metallic oxide electrodes and the waste water.Type: ApplicationFiled: December 23, 2002Publication date: July 24, 2003Applicant: JAPAN SOCIETY FOR THE PROMOTION OF SCIENCEInventors: Tsuneo Watanabe, Ikko Ihara, Kiyoshi Kanamura, Iori Kanamori
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Patent number: 6482412Abstract: A novel compound, which is effective for treatment of AIDS and has inhibitory activity on human immunodeficiency viruses (HIV), was examined. The K97-0003 peptide, which has anti-HIV activity caused by inhibition of syncytium formation by fusion of envelope glycoprotein of HIV and the host cells expressing the receptor to said virus, was provided by the present invention. Furthermore, the base sequence of the gene coding for said polypeptide, and the method for preparing said polypeptide using strain K97-0003 were provided.Type: GrantFiled: January 24, 2001Date of Patent: November 19, 2002Assignees: Gakkou Houjin Kitasato Gakuen, Japan Society for the Promotion of ScienceInventors: Haruo Tanaka, Satoshi Ohmura
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Patent number: 6337007Abstract: A soft magnetic thin film in the form of a Co—Fe—Ni—C thin film consisting essentially of 40-70% by weight of cobalt, 20-40% by weight of iron, 5-20% by weight of nickel, and 0.02-0.1% by weight of carbon has a high saturation magnetic flux density, excellent soft magnetic properties, and a high electric resistivity.Type: GrantFiled: January 19, 2000Date of Patent: January 8, 2002Assignees: Waseda University, Japan Society for the Promotion of ScienceInventor: Tetsuya Osaka