Abstract: In one embodiment, a method includes generating a first current in a bias current circuit and biasing an amplifier with the first current when the amplifier is operating in a first temperature range, and generating a second current in the bias current circuit and biasing the amplifier with the second current when the amplifier is operating in a second temperature range. These two currents may correspond to different profiles with respect to temperature, to maintain substantial linearity of the amplifier over the temperature ranges.

Abstract: Stacked CMOS power amplifier (PA) and radio frequency (RF) coupler devices and related methods are disclosed. The stacked device includes a CMOS PA die configured to receive a transmit input signal and to output an amplified transmit signal, and a RF coupler device configured to receive the amplified transmit signal, to output an antenna transmit signal, and to output an RF signal proportional to the antenna transmit signal. The CMOS PA die and the RF coupler device are stacked on top of and electrically coupled to each other, and the CMOS PA die and the RF coupler device are combined within a single semiconductor package. In some embodiments, the RF coupler device is positioned on top of the CMOS PA die, and in other embodiments the CMOS PA die is positioned on top of the RF coupler device.

Abstract: Embodiments are directed to capacitance compensation via a compensation device coupled to a gain device to compensate for a capacitance change occurring due to an input signal change, along with a controller coupled to the compensation device to receive the input signal and to control an amount of compensation based on the input signal. In some embodiments, banks may be formed of multiple compensation devices, where each of the banks has a different size and is coupled to receive a different set of bias voltages.

Abstract: Stacked CMOS power amplifier (PA) and radio frequency (RF) coupler devices and related methods are disclosed. The stacked device includes a CMOS PA die configured to receive a transmit input signal and to output an amplified transmit signal, and a RF coupler device configured to receive the amplified transmit signal, to output an antenna transmit signal, and to output an RF signal proportional to the antenna transmit signal. The CMOS PA die and the RF coupler device are stacked on top of and electrically coupled to each other, and the CMOS PA die and the RF coupler device are combined within a single semiconductor package. In some embodiments, the RF coupler device is positioned on top of the CMOS PA die, and in other embodiments the CMOS PA die is positioned on top of the RF coupler device.

Abstract: Narrow band tunable radio frequency (RF) power amplifiers (PAs) and related methods are disclosed that provide narrow band tunable gain responses, such as linear gain responses, that can be selected for different frequency bands. The narrow band tunable PAs thereby provide out-of-band rejection for different selectable frequency bands so that narrow band filters are not required in the transmit input path for communication devices. The pass band location and/or bandwidth for the narrow band gain response can be tuned using different techniques, as desired. The narrow band tunable PAs can also be fabricated using CMOS processing, if desired, so that a CMOS PA integrated circuit is provided.

Abstract: In one embodiment, an apparatus includes a voltage regulator, an amplifier, and control logic. The regulator may receive a supply voltage and output a regulated voltage to an intermediate node. In turn, the amplifier is to be powered by the regulated voltage, while the control logic is coupled to the voltage regulator to cause a change in the regulated voltage to a safe voltage before one or more gain stages of the amplifier is to be coupled to or decoupled from an output signal path.

Abstract: In one embodiment, a method includes generating a current that is proportional to a mobility and an oxide capacitance of a tracking device and independent of a threshold voltage variation of the tracking device, generating a voltage from the current, and providing the voltage as at least part of a bias voltage for another device. In one embodiment, this other device may be a compensation circuit coupled to a main device to compensate for capacitance non-linearity of the main device.

Abstract: In one embodiment, the present invention includes an apparatus having at least two gain stages to receive incoming signals and to output amplified signals, along with multiple regulators. More specifically, a linear regulator can be coupled to the first gain stage to provide a first regulated voltage to the first gain stage, and a switching regulator coupled to the second gain stage to provide a second regulated voltage to the second gain stage.

Abstract: In one embodiment, a power amplifier may include an output stage with multiple transformers and corresponding matching capacitances. The capacitances may include a first matching capacitance coupled in parallel with a secondary coil of a first transformer and a second matching capacitance coupled in parallel with a secondary coil of a second transformer, where the secondary coils are coupled in series in an output stack configuration. By accounting for parasitics present in the power amplifier, the first matching capacitance can be designed to have a greater capacitance than the second matching capacitor, even where the first and second transformers are configured to output substantially equal power levels.

Abstract: CMOS power amplifiers (PAs) are disclosed having one or more integrated one-time programming (OTP) memories that are utilized to control at least in part operation of the CMOS PAs. The integrated OTP memories within the CMOS power amplifiers (PAs) allow adjustments, such as one-time factory trimming, of CMOS PA integrated circuits to optimize or improve performance. With this capability, for example, the tuning and biasing of stages within a multi-stage amplifier within a CMOS PA can be measured during factory test and adjusted by setting one or more bits in the OTP memories, as desired. Further, the operation of other circuitry within the PA can also be controlled at least in part with parameter settings stored in the OTP memories.

Abstract: In one implementation, the present invention includes a diode device to receive an incoming radio frequency (RF) signal to be amplified in a gain device of an amplifier and to provide a pre-distorted signal. Based on this pre-distorted signal, the gain device can output an amplified RF signal having substantial linearity to the incoming RF signal.

Abstract: In one embodiment, the present invention includes multiple gain stages to receive and amplify a differential input signal at different common mode voltages. The stages each may include a pair of linear NMOS gain transistors coupled to a primary coil of a given output transformer. One of the stages may include commonly coupled terminals coupled to a center tap of the primary coil of an output transformer of another stage, and a supply current provided to one of the stages is re-used for the other stage(s).

Abstract: In one embodiment, the present invention includes multiple gain stages and an output network coupled to the gain stages. Each of the gain stages can be independently controlled to amplify a radio frequency (RF) signal to an output power level for transmission from a mobile wireless device. When controlled to be inactive, at least one of the gain stages can be placed into a low impedance state.