Abstract: The present invention relates to a surface treatment apparatus for cleaning or treating (micro etching, etc.) a surface of a TEM sample (substrate) by converting plasma ions into a neutral beam and a separator including an RF cathode connected to an RF supply unit and accelerating ions by self bias is disposed between a plasma generating chamber and a neutral chamber and the ions generated in the plasma generating chamber are converted into a neutral beam through a separator and accelerated and irradiated to a neutral chamber to enable surface treatment without damaging a sample.

Abstract: Provided is a plasma generator for improving uniformity of plasma. The plasma generator which includes a pair of source electrode unit 110 and bias electrode unit 120 disposed to face each other in a vacuum chamber and an RF power unit 132 and a bias RF power unit 142 supplying RF power to the source electrode unit 110 and the bias electrode unit 120, respectively, comprises a common contact point cc which is connected with a plurality of contact points cp disposed along the edge of the source electrode unit 110; and an impedance controller 150 which is connected with the common contact point cc to control the impedance.

Abstract: An apparatus for generating plasma is provided. The apparatus may include a vacuum chamber and a plasma source part. The plasma source part may include a dielectric part, an upper electrode, and an inductive coil. The dielectric part may be installed to protrude upward along a circumference of a through-hole provided at a top of the vacuum chamber. The upper electrode may be coupled to seal an opened top of the dielectric part. The inductive coil may spirally extend along an outer circumference surface of the dielectric part.

Abstract: A plasma generating apparatus is provided. The plasma generating apparatus may include a vacuum chamber, an ElectroStatic Chuck (ESC), a first antenna part including a first antenna and a first antenna cover, and a second antenna part including a second antenna and a second antenna cover. The vacuum chamber has a vacant interior and a top sealed by an insulation vacuum plate. The ESC is disposed at a center of the inside of the vacuum chamber. The first antenna is coupled to a through-hole of the second antenna. The first antenna cover airtightly covers a top of the first antenna. The second antenna is coupled to the through-hole of the insulation vacuum plate. The second antenna cover airtightly covers a top of the first antenna part and the second antenna.

Abstract: A plasma source for a substrate is provided. The plasma source may include a source electrode and an impedance box. The source electrode receives a source Radio Frequency (RF) from the external and generates plasma based on capacitive coupling within a vacuum chamber. The impedance box connects at one end to an outer circumference surface of the source electrode, and is grounded at the other end to the vacuum chamber, and controls an electric current flowing from the source electrode to the vacuum chamber by the source RF.

Abstract: Provided is a plasma generating apparatus. The apparatus includes a vacuum chamber, an ElectroStatic Chuck (ESC), an antenna holder. The vacuum chamber has a hollow interior and is sealed at its top by a vacuum plate that has a through-hole at its center. The ESC is disposed at an internal center of the vacuum chamber. The antenna unit is disposed within the vacuum chamber under the vacuum plate. The antenna cover covers and is coupled to a top of the antenna unit and receives and forwards an external source RF to the antenna unit. The cover holder is caught by an upper surface of the vacuum plate and suspends and holds the antenna unit.

Abstract: An apparatus for generating plasma is provided. The apparatus may include a vacuum chamber and a plasma source part. The plasma source part may include a dielectric part, an upper electrode, and an inductive coil. The dielectric part may be installed to protrude upward along a circumference of a through-hole provided at a top of the vacuum chamber. The upper electrode may be coupled to seal an opened top of the dielectric part. The inductive coil may spirally extend along an outer circumference surface of the dielectric part.