Abstract: A method for forming metallic nanoclusters upon a substrate includes moving the substrate through a deposition chamber at a predetermined uniform velocity and depositing metallic precursor compounds onto the substrate. The metallic precursor compounds are subsequently bombarded with an ultrasonic jet of atomic hydrogen to form the metallic nanoclusters.

Abstract: A method is presented for the vapor deposition of a material film upon a substrate. The method comprises the use of a Jet Vapor Deposition process with a vaporized polymer gas flowing at supersonic velocity. The vaporized polymer gas consists of a carrier gas and a vaporized polymer, such as Parylene. The vaporized polymer gas impinges upon the substrate through a port and forms the material film.

Abstract: Introducing a silane reactant gas into a Jet Vapor Deposition microwave discharge source for deposition of silicon nitride films at increased rate. An array of regularly spaced micro-inlets in a JVD microwave discharge source delivers the silane reactant gas and act as non-interfering silane injectors to give a rate increase proportional to the number of micro-inlets while preserving deposited film quality.

Abstract: An "arrested nucleation" jet vapor deposition system uses sonic jets and moving substrates to produce nanocluster-embedded films in which semiconductor or metal nanoclusters are trapped in a film of hard, inorganic host materials. CdSe films fabricated at high rate and room temperature in accordance with the present invention show unusual nonlinear optical behavior. Nanoclusters have unique size dependent properties and nanocluster based films have applications in optics and electronics.

Abstract: Described is a method for depositing from the vapor phase a chemical species into the form of a thin solid film material which overlays a substrate material. The deposition process consists of three steps: (1) synthesis of depositing species, (2) transport of said species from site of synthesis to a prepared substrate material, and (3) condensation and subsequent film growth. The transport step is achieved by admixing small concentrations of the depositing species into the flow of a high speed jet of an inert carrier gas. This jet impinges on the substrate's surface and thereby convects the depositing species to this surface where condensation occurs. Since the gas mixture is at fairly high pressure, the deposition is achieved in a simple flow apparatus rather than in the high vacuum systems required of other methods. Also this transport technique allows the chemical and/or physical phenomena utilized in the depositing species synthesis step to be isolated from the actual condensation reaction.

Abstract: A host-guest jet vapor deposition system uses sonic jets and moving substrates to produce host-guest films in which complex organic molecules are trapped in hard, inorganic hosts. The system is capable of film fabrication at high rate and room temperature. Guest molecule concentrations are large and film quality is excellent. Films made in accordance with the present invention have applications in optics and electronics.

Abstract: A gas jet film deposition system includes a source of thermionically emitted electrons which are accelerated through carrier gas and generate He ions by impact ionization. The resultant electron avalanching and multiplication generates an extremely dense plasma, and produces large electron currents. The electron current is collected at a free, high electric field end of a crucible. The present system can generate vaporized evaporant which is entrained in the gas jet and thereby provide a high density source of ions. The ions may be presented to a substrate together with or without the evaporant.

Abstract: A method and apparatus for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases.

Abstract: A thin film is formed on a substrate positioned in a vacuum chamber by use of a gas jet apparatus affixed to a vacuum chamber port and having an outer nozzle with an interior cavity into which carrier gas is fed, an inner nozzle located within the outer nozzle interior cavity into which reactant gas is introduced, a tip of the inner nozzle being recessed from the vacuum chamber port within the outer nozzle interior cavity, and a microwave discharge device configured about the apparatus for generating a discharge in the carrier gas and reactant gas only in a portion of the outer nozzle interior cavity extending from approximately the inner nozzle tip towards the vacuum chamber. A supersonic free jet of carrier gas transports vapor species generated in the microwave discharge to the surface of the substrate to form a thin film on the substrate.

Abstract: An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.