Abstract: A system that generates an intense hot gas stream is described to etch a polymer on a substrate used in the manufacture of semiconductor and MEMS devices with no surface damage. The etching process is particularly useful to remove a polymer from relatively high aspect Height-to-Width and Width-to-Height ratio holes that can include trenches, having relatively large aspect ratios for removal of polymers used in connection with the manufacturing of microstructures.
Type:
Grant
Filed:
August 12, 2005
Date of Patent:
April 29, 2008
Assignee:
Jetek, LLC
Inventors:
Lynn David Bollinger, Iskander Tokmouline