Patents Assigned to Jiangxi Sai Wei LDK Solar Hi-Tech Co., Ltd.
  • Isostatic pressing method for applying a silicon powder onto a silicon brick for silicon crystal growth in a mono-crystal or multi-crystal furnace
    Patent number: 8298468
    Abstract: An isostatic pressing method for applying silicon powder as an original raw material for silicon crystal growth includes pressing silicon powder having a particle size of 0.1 to 1,000 micrometers into a silicon brick employing cold or hot isostatic pressing to provide a pressed silicon brick; and charging the pressed silicon brick into a furnace for silicon crystal growth. The furnace for silicon crystal growth may be a mono-crystal furnace for growing monocrystalline silicon or a multi-crystal furnace for growing polycrystalline silicon.
    Type: Grant
    Filed: June 22, 2009
    Date of Patent: October 30, 2012
    Assignee: Jiangxi Sai Wei LDK Solar Hi-Tech Co., Ltd.
    Inventors: Tao Zhang, Yuepeng Wan, Dejing Zhong