Patents Assigned to JIANGSU AIDE SOLAR ENERGY TECHNOLOGY CO.,LTD
  • Method of Fabricating Buried Contacts of Solar Cell with Curved Trenches
    Publication number: 20130122641
    Abstract: A solar cell having buried contacts is provided. Curved trenches are formed on a surface of a Si substrate to form the buried contacts. The curved trenches have deep depths with wafer break prevented. The buried contacts have good efficiency on collecting electrons obtained from conversion by the longer wavelength light. The present invention is fit for mass production with a high yield, a simple fabrication procedure, a low cost and a good performance.
    Type: Application
    Filed: January 18, 2012
    Publication date: May 16, 2013
    Applicants: NATIONAL TSING HUA UNIVERSITY, JIANGSU AIDE SOLAR ENERGY TECHNOLOGY CO.,LTD
    Inventors: Fang-Chi Hsieh, Li-Karn Wang
  • Heterojunction Solar Cell Having Amorphous Silicon Layer
    Publication number: 20120222731
    Abstract: The present disclosure coats an amorphous silicon (Si) layer on a doped Si substrate of a solar cell. Or, a silicon dioxide (SiO2) layer is grown on the doped Si substrate and beneath the amorphous Si layer. A heterojunction interface and a homojunction interface are formed in the solar cell in a one-time diffusion. Thus, a heterojunction solar cell can be easily fabricated and utilities compatible to those used in modern production can still be used for reducing cost.
    Type: Application
    Filed: July 27, 2011
    Publication date: September 6, 2012
    Applicants: NATIONAL TSING HUA UNIVERSITY, JIANGSU AIDE SOLAR ENERGY TECHNOLOGY CO.,LTD
    Inventors: Fang-Chi Hsieh, Li-Karn Wang