Patents Assigned to JIANGSU LEUVEN INSTRUMENTS CO. LTD
  • Patent number: 12243713
    Abstract: An anti-breakdown ion source discharge apparatus includes a discharge chamber, a coil support, an upper insulation fixing block, a discharge component and an ion source chamber. The discharge component includes a radio-frequency coil, a lower conductive connector and an upper conductive connector. The radio-frequency coil is fixed on a coil support base; the coil support base is clamped on an inner wall of the bottom of the ion source base; the coil support is along the circumference of the coil support base; the radio-frequency coil passes through the coil support; the upper conductive connector passes by the radio-frequency coil and the coil support base from the outside of the radio-frequency coil and extends into the bottom of the discharge chamber; and the upper insulation fixing block is sleeved over the upper conductive connector and is fixed on the inner wall of the bottom of the ion source chamber.
    Type: Grant
    Filed: May 19, 2021
    Date of Patent: March 4, 2025
    Assignee: JIANGSU LEUVEN INSTRUMENTS CO. LTD
    Inventors: Yaoyao Zhang, Dongdong Hu, Jun Zhang, Na Li, Haiyang Liu, Shiran Cheng, Song Guo, Kaidong Xu
  • Publication number: 20240407267
    Abstract: The present invention provides a control method for sidewall contamination of an MRAM magnetic tunnel. In the control method, there is no need to additionally coat an insulation protection layer on the sidewall of an MTJ layer, but a unique funnel-shaped trench is formed during the etching process; the funnel-shaped trench comprises a first area away from a plane where a substrate is located and a second area adjacent to the plane where the substrate is located; the size of the first area in a first direction gradually increases, and the size of the second area in the first direction does not change; and in removing metal contamination on the bottom of the funnel-shaped trench, the funnel-shaped trench can prevent the metal contamination from being attached to the sidewall of the MTJ layer, so as to improve the apparatus performance of an MRAM.
    Type: Application
    Filed: December 2, 2021
    Publication date: December 5, 2024
    Applicant: JIANGSU LEUVEN INSTRUMENT CO. LTD
    Inventors: Yuxin YANG, Jiahe Li, Taiyan PENG, Dongdong HU, Kaidong XU
  • Publication number: 20240381778
    Abstract: A method for reducing damage to a magnetic tunnel junction (MTJ) of a magnetic random access memory (MRAM), comprising: providing a base structure, where the base structure comprises a substrate, a lower electrode, an MTJ layer, and an upper electrode, which are arranged in the above-listed sequence along a first direction, and the first direction is perpendicular to the substrate and points from the substrate to the lower electrode; performing first etching on a surface of the upper electrode facing away from the substrate until the lower electrode is exposed; pre-processing a sidewall of the MTJ layer to form a modified layer with a preset thickness through reaction at the sidewall of the MTJ layer; and performing second etching until the substrate is exposed.
    Type: Application
    Filed: December 2, 2021
    Publication date: November 14, 2024
    Applicant: JIANGSU LEUVEN INSTRUMENTS CO., LTD.
    Inventors: Yuxin YANG, Jiahe LI, Taiyan PENG, Dongdong HU, Kaidong XU
  • Patent number: 12112923
    Abstract: A reaction chamber lining including an annular side wall and a flange arranged on an upper portion of the side wall. An end face of the flange extends from the side wall in a radial direction, an outer edge of the flange extends in the radial direction to form fixing flanging parts, and a hole is in each of the fixing flanging parts. The side wall includes a rectangular slot, and a position of the rectangular slot corresponds to a position of a robotic arm access hole in a side wall of a reaction chamber. The side wall includes through holes and honeycomb-shaped apertures. A face joined to the bottom of the side wall includes a disc extending inwards in the radial direction, an extending end of the disc is fitted with an outer edge of an electrode assembly. A plurality of circles of slotted holes are in the disc.
    Type: Grant
    Filed: September 18, 2019
    Date of Patent: October 8, 2024
    Assignee: JIANGSU LEUVEN INSTRUMENTS CO. LTD
    Inventors: Na Li, Shiran Cheng, Haiyang Liu, Zhaochao Chen, Yonggang Hou, Chengyi Wang, Dongdong Hu, Kaidong Xu
  • Patent number: 12063866
    Abstract: A multilayer magnetic tunnel junction etching method and an MRAM device. A wafer is processed according to particular steps without interrupting vacuum. A reactive ion plasma etching chamber (10) and an ion beam etching chamber (11) are used separately at least one time. The processing of a multilayer magnetic tunnel junction is always in a vacuum environment, thereby avoiding the impact of an external environment on etching. By means of the process of combining etching and cleaning, a device structure maintains good steepness, and the metal contamination and damage of a magnetic tunnel junction film structure are significantly decreased, thereby greatly increasing the performance and reliability of a device. In addition, use of both the ion beam etching chamber (11) and the reactive ion plasma etching chamber (10) solves the technical problem of an existing single etching method, and increases production efficiency and etching process precision.
    Type: Grant
    Filed: May 23, 2019
    Date of Patent: August 13, 2024
    Assignee: JIANGSU LEUVEN INSTRUMENTS CO. LTD
    Inventors: Juebin Wang, Zhongyuan Jiang, Ziming Liu, Dongchen Che, Hushan Cui, Dongdong Hu, Lu Chen, Dajian Han, Zhiwen Zou, Kaidong Xu
  • Publication number: 20240249926
    Abstract: A plasma treatment method, which is applied to a plasma treatment apparatus, wherein the plasma treatment apparatus comprises an ion source cavity (10), and sediment is present in the ion source cavity (10). The plasma treatment method comprises: introducing cleaning gas into an ion source cavity (10) for ionization to generate a first plasma, so that the first plasma reacts with sediment in the ion source cavity (10) to generate a gas compound, which is then discharged, thereby achieving the aim of cleaning the sediment in the ion source cavity (10).
    Type: Application
    Filed: November 11, 2021
    Publication date: July 25, 2024
    Applicant: JIANGSU LEUVEN INSTRUMENTS CO., LTD.
    Inventors: Dajian HAN, Na LI, Taiyan PENG, Dongchen CHE, Kaidong XU
  • Patent number: 12035633
    Abstract: Disclosed is method for etching a magnetic tunnel junction. An etching apparatus used comprises a sample loading chamber, a vacuum transition chamber, a reactive ion plasma etching chamber, an ion beam etching chamber, a film coating chamber and a vacuum transport chamber. The method comprises multiple performances of the steps of reactive ion and plasma etching, ion beam etching and film coating. Multiple performances of entry into and exit from the chambers are required during the process, and the delivery between the chambers is performed under vacuum.
    Type: Grant
    Filed: May 23, 2019
    Date of Patent: July 9, 2024
    Assignee: JIANGSU LEUVEN INSTRUMENTS CO. LTD
    Inventors: Ziming Liu, Juebin Wang, Zhongyuan Jiang, Dongchen Che, Hushan Cui, Dongdong Hu, Lu Chen, Hongyue Sun, Dajian Han, Kaidong Xu
  • Patent number: 12027345
    Abstract: An etching uniformity regulating device and method. The device comprises an inductor and a capacitor connected in parallel. One end of the etching uniformity regulating device is connected to a built-in ring located at the edge of an electrostatic chuck of an etching machine, and the other end is grounded. The purpose of controlling the edge electric field is achieved by regulating a capacitance of the capacitor, so as to regulate the etching rate of the edge, thereby achieving etching uniformity.
    Type: Grant
    Filed: September 18, 2019
    Date of Patent: July 2, 2024
    Assignee: JIANGSU LEUVEN INSTRUMENTS CO. LTD
    Inventors: Xiaobo Liu, Xuedong Li, Yong Qiu, Na Li, Yonggang Hou, Dongdong Hu, Lu Chen, Kaidong Xu
  • Patent number: 12009188
    Abstract: The present invention provides a rotatable faraday cleaning apparatus and a plasma processing system, said apparatus comprising a cavity cover, a motor, an eccentric wheel, a long-petalled assembly, a coupling window, a gas intake nozzle, a connecting rod, a short-petalled assembly, a first sector-shaped conductor, and a second sector-shaped conductor; the cavity cover is assembled on a reactor cavity main body, the coupling window is mounted on the cavity cover, the gas intake nozzle is provided on the coupling window, the first sector-shaped conductor is assembled on the gas intake nozzle, the second sector-shaped conductor is assembled on the gas intake nozzle, the long-petalled assembly is assembled on the gas intake nozzle, the short-petalled assembly is assembled on the gas intake nozzle, the connecting rod is assembled on the long-petalled assembly, the eccentric wheel is assembled on the connecting rod, and the motor is mounted on the eccentric wheel.
    Type: Grant
    Filed: February 28, 2020
    Date of Patent: June 11, 2024
    Assignee: JIANGSU LEUVEN INSTRUMENTS CO., LTD
    Inventors: Haiyang Liu, Dongdong Hu, Xiaobo Liu, Na Li, Shiran Cheng, Song Guo, Zhihao Wu, Kaidong Xu
  • Patent number: 11963455
    Abstract: There is provided a method for etching magnetic tunnel junction, using an etching apparatus including a sample loading chamber, a vacuum transition chamber, a reactive ion plasma etching chamber, an ion beam etching chamber, a coating chamber, and a vacuum transmission chamber. The method completes the etching of the magnetic tunnel junction in the reactive ion plasma etching chamber, performs ion beam cleaning in the ion beam etching chamber, and performs coating protection in the coating chamber. The transmission among the respective chambers is all in a vacuum state. The invention can overcome the bottleneck in the production of high-density small devices, while greatly improving the yield, reliability and production efficiency of the devices.
    Type: Grant
    Filed: May 21, 2019
    Date of Patent: April 16, 2024
    Assignee: JIANGSU LEUVEN INSTRUMENTS CO. LTD
    Inventors: Kaidong Xu, Dongchen Che, Dongdong Hu, Lu Chen
  • Patent number: 11955323
    Abstract: The present invention provides a device for blocking plasma backflow in a process chamber to protect an air inlet structure, comprising an air inlet nozzle tightly connected to an air inlet flange. The inner cavity of the air inlet nozzle is provided with an air inlet guide body, wherein the air inlet guide body has an upper structure, a middle structure, and a lower structure, the upper, middle, and lower structures are an integrated structure, the upper, middle, and lower structures are all cylindrical, the cross-sectional diameter of the upper structure is smaller than that of the middle structure, a gas gathering area is arranged between the middle structure and the lower structure, and the middle structure and the lower structure are connected by the gas gathering area.
    Type: Grant
    Filed: February 29, 2020
    Date of Patent: April 9, 2024
    Assignee: JIANGSU LEUVEN INSTRUMENTS CO. LTD
    Inventors: Na Li, Dongdong Hu, Xiaobo Liu, Haiyang Liu, Shiran Cheng, Song Guo, Zhihao Wu, Kaidong Xu
  • Patent number: 11877519
    Abstract: A semiconductor device manufacturing method, wherein the etching apparatus used includes a sample loading chamber (15), a vacuum transition chamber (14), a reactive ion plasma etching chamber (10), an ion beam etching chamber (11), a film coating chamber (12), and a vacuum transport chamber (13). Without interrupting the vacuum, reactive ion etching is first adopted to etch to an isolation layer (102); then, ion beam etching is performed to etch into a fixed layer (101) and stopped near a bottom electrode metal layer (100), leaving only a small amount of the fixed layer (101); subsequently, reactive ion etching is adopted to etch to the bottom electrode metal layer (100); and finally, ion beam cleaning is performed to remove metal residues and sample surface treatment, and coating protection is performed.
    Type: Grant
    Filed: May 23, 2019
    Date of Patent: January 16, 2024
    Assignee: JIANGSU LEUVEN INSTRUMENTS CO. LTD
    Inventors: Zhongyuan Jiang, Ziming Liu, Juebin Wang, Dongchen Che, Hushan Cui, Dongdong Hu, Lu Chen, Huiqun Ren, Zhiwen Zou, Kaidong Xu
  • Patent number: 11837439
    Abstract: Disclosed in the present application is an inductively coupled plasma treatment system. Said system switches the connection between a radio frequency coil and a faraday shielding device by means of a switch switching radio frequency power. When a radio frequency power supply is connected to the radio frequency coil by means of a matched network, the radio frequency power is coupled into the radio frequency coil to perform plasma treatment process. When a radio frequency power supply is connected to a faraday shielding device by means of a matched network, the radio frequency power is coupled into the faraday shielding device to perform cleaning process on a dielectric window and an inner wall of a plasma treatment cavity.
    Type: Grant
    Filed: February 26, 2020
    Date of Patent: December 5, 2023
    Assignee: JIANGSU LEUVEN INSTRUMENTS CO. LTD
    Inventors: Haiyang Liu, Xiaobo Liu, Xuedong Li, Na Li, Shiran Cheng, Song Guo, Dongdong Hu, Kaidong Xu
  • Patent number: 11735400
    Abstract: Provided are a faraday cleaning device and a plasma processing system, the device comprising a reaction chamber, a bias electrode, a wafer, a chamber cover, a coupling window, an air inlet nozzle, a vertical coil, and a faraday layer, wherein the coupling window is installed at the upper end face of the chamber cover, the chamber cover is installed at the upper end face of the reaction chamber, the bias electrode is assembled inside the reaction chamber, the wafer is installed at the upper end face of the bias electrode, the air inlet nozzle is assembled inside the coupling window, the faraday layer is installed at the upper end face of the coupling window, and the vertical coil is assembled at the upper end face of the faraday layer.
    Type: Grant
    Filed: February 26, 2020
    Date of Patent: August 22, 2023
    Assignee: JIANGSU LEUVEN INSTRUMENTS CO., LTD
    Inventors: Haiyang Liu, Dongdong Hu, Xiaobo Liu, Na Li, Shiran Cheng, Song Guo, Zhihao Wu, Kaidong Xu
  • Publication number: 20220375733
    Abstract: Provided are a faraday cleaning device and a plasma processing system, the device comprising a reaction chamber, a bias electrode, a wafer, a chamber cover, a coupling window, an air inlet nozzle, a vertical coil, and a faraday layer, wherein the coupling window is installed at the upper end face of the chamber cover, the chamber cover is installed at the upper end face of the reaction chamber, the bias electrode is assembled inside the reaction chamber, the wafer is installed at the upper end face of the bias electrode, the air inlet nozzle is assembled inside the coupling window, the faraday layer is installed at the upper end face of the coupling window, and the vertical coil is assembled at the upper end face of the faraday layer.
    Type: Application
    Filed: February 26, 2020
    Publication date: November 24, 2022
    Applicant: JIANGSU LEUVEN INSTRUMENTS CO., LTD
    Inventors: Haiyang LIU, Dongdong HU, Xiaobo LIU, Na LI, Shiran CHENG, Song GUO, Zhihao WU, Kaidong XU
  • Publication number: 20220319817
    Abstract: Disclosed is a plasma processing system with a faraday shielding device. The plasma processing system comprises a reaction chamber, and a faraday shielding device and an air inlet nozzle which are located on the reaction chamber. The air inlet nozzle penetrates through the faraday shielding device to introduce process gas into the reaction chamber. The air inlet nozzle is made of a conductive material, and the air inlet nozzle is electrically connected to the faraday shielding device. According to the plasma processing system, the air inlet nozzle made of the conductive material is electrically connected to the faraday shielding device, when the cleaning process is carried out, reaction gas of the cleaning process in the projection area of the air inlet nozzle is also electrically isolated, the reaction gas of the cleaning process forms a capacitive coupling plasma in the whole region below a dielectric window.
    Type: Application
    Filed: February 26, 2020
    Publication date: October 6, 2022
    Applicant: JIANGSU LEUVEN INSTRUMENTS CO., LTD
    Inventors: Xuedong LI, Xiaobo LIU, Dongdong HU, Haiyang LIU, Hongbo SUN, Kaidong XU, Lu CHEN
  • Publication number: 20220319816
    Abstract: Disclosed is a plasma etching system, comprising a reaction chamber, a base located in the reaction chamber and used for bearing a workpiece, and a dielectric window located on the reaction chamber. Flat plate type electrodes and coil electrodes are provided on the outer surface of the dielectric window; the flat plate type electrodes are located right over the base, and the coil electrodes are arranged in the peripheral regions of the flat plate type electrodes in a surrounding manner; a Faraday shielding layer is further provided between the coil electrodes and the outer surface of the dielectric window.
    Type: Application
    Filed: February 26, 2020
    Publication date: October 6, 2022
    Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTD
    Inventors: Haiyang LIU, Dongdong HU, Na LI, Xiaobo LIU, Shiran CHENG, Song GUO, Zhihao WU, Kaidong XU
  • Publication number: 20220297168
    Abstract: The present invention provides a rotatable faraday cleaning apparatus and a plasma processing system, said apparatus comprising a cavity cover, a motor, an eccentric wheel, a long-petalled assembly, a coupling window, a gas intake nozzle, a connecting rod, a short-petalled assembly, a first sector-shaped conductor, and a second sector-shaped conductor; the cavity cover is assembled on a reactor cavity main body, the coupling window is mounted on the cavity cover, the gas intake nozzle is provided on the coupling window, the first sector-shaped conductor is assembled on the gas intake nozzle, the second sector-shaped conductor is assembled on the gas intake nozzle, the long-petalled assembly is assembled on the gas intake nozzle, the short-petalled assembly is assembled on the gas intake nozzle, the connecting rod is assembled on the long-petalled assembly, the eccentric wheel is assembled on the connecting rod, and the motor is mounted on the eccentric wheel.
    Type: Application
    Filed: February 28, 2020
    Publication date: September 22, 2022
    Applicant: JIANGSU LEUVEN INSTRUMENTS CO., LTD
    Inventors: Haiyang LIU, Dongdong HU, Xiaobo LIU, Na LI, Shiran CHENG, Song GUO, Zhihao WU, Kaidong XU
  • Publication number: 20220254615
    Abstract: The present invention provides a device for blocking plasma backflow in a process chamber to protect an air inlet structure, comprising an air inlet nozzle tightly connected to an air inlet flange. The inner cavity of the air inlet nozzle is provided with an air inlet guide body, wherein the air inlet guide body has an upper structure, a middle structure, and a lower structure, the upper, middle, and lower structures are an integrated structure, the upper, middle, and lower structures are all cylindrical, the cross-sectional diameter of the upper structure is smaller than that of the middle structure, a gas gathering area is arranged between the middle structure and the lower structure, and the middle structure and the lower structure are connected by the gas gathering area.
    Type: Application
    Filed: February 29, 2020
    Publication date: August 11, 2022
    Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTD
    Inventors: Na LI, Dongdong HU, Xiaobo LIU, Haiyang LIU, Shiran CHENG, Song GUO, Zhihao WU, Kaidong XU
  • Publication number: 20220254605
    Abstract: Disclosed is a ceramic air inlet radio frequency connection type cleaning device, comprising an etching system, a cleaning system, a power supply control device and a radio frequency cleaning mechanism, wherein the power supply control device is connected to the etching system and the cleaning system and is used for power supply switching; the etching system is connected to two single three-dimensional coil bodies of a three-dimensional coil by means of two lines of a power distribution box so as to etch a wafer in a chamber; and the cleaning system enables the lower surface of a top ceramic air inlet nozzle connected to the radio frequency cleaning mechanism to generate high negative pressure by connecting a radio frequency to the radio frequency cleaning mechanism, such that plasmas directly bombard the lower surface of the top ceramic air inlet nozzle.
    Type: Application
    Filed: February 29, 2020
    Publication date: August 11, 2022
    Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTD
    Inventors: Haiyang LIU, Dongdong HU, Xuedong LI, Na LI, Shiran CHENG, Jun ZHANG, Zhihao WU, Kaidong XU