Patents Assigned to JIANGSU LEUVEN INSTRUMENTS CO. LTD
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Patent number: 11963455Abstract: There is provided a method for etching magnetic tunnel junction, using an etching apparatus including a sample loading chamber, a vacuum transition chamber, a reactive ion plasma etching chamber, an ion beam etching chamber, a coating chamber, and a vacuum transmission chamber. The method completes the etching of the magnetic tunnel junction in the reactive ion plasma etching chamber, performs ion beam cleaning in the ion beam etching chamber, and performs coating protection in the coating chamber. The transmission among the respective chambers is all in a vacuum state. The invention can overcome the bottleneck in the production of high-density small devices, while greatly improving the yield, reliability and production efficiency of the devices.Type: GrantFiled: May 21, 2019Date of Patent: April 16, 2024Assignee: JIANGSU LEUVEN INSTRUMENTS CO. LTDInventors: Kaidong Xu, Dongchen Che, Dongdong Hu, Lu Chen
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Patent number: 11955323Abstract: The present invention provides a device for blocking plasma backflow in a process chamber to protect an air inlet structure, comprising an air inlet nozzle tightly connected to an air inlet flange. The inner cavity of the air inlet nozzle is provided with an air inlet guide body, wherein the air inlet guide body has an upper structure, a middle structure, and a lower structure, the upper, middle, and lower structures are an integrated structure, the upper, middle, and lower structures are all cylindrical, the cross-sectional diameter of the upper structure is smaller than that of the middle structure, a gas gathering area is arranged between the middle structure and the lower structure, and the middle structure and the lower structure are connected by the gas gathering area.Type: GrantFiled: February 29, 2020Date of Patent: April 9, 2024Assignee: JIANGSU LEUVEN INSTRUMENTS CO. LTDInventors: Na Li, Dongdong Hu, Xiaobo Liu, Haiyang Liu, Shiran Cheng, Song Guo, Zhihao Wu, Kaidong Xu
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Patent number: 11877519Abstract: A semiconductor device manufacturing method, wherein the etching apparatus used includes a sample loading chamber (15), a vacuum transition chamber (14), a reactive ion plasma etching chamber (10), an ion beam etching chamber (11), a film coating chamber (12), and a vacuum transport chamber (13). Without interrupting the vacuum, reactive ion etching is first adopted to etch to an isolation layer (102); then, ion beam etching is performed to etch into a fixed layer (101) and stopped near a bottom electrode metal layer (100), leaving only a small amount of the fixed layer (101); subsequently, reactive ion etching is adopted to etch to the bottom electrode metal layer (100); and finally, ion beam cleaning is performed to remove metal residues and sample surface treatment, and coating protection is performed.Type: GrantFiled: May 23, 2019Date of Patent: January 16, 2024Assignee: JIANGSU LEUVEN INSTRUMENTS CO. LTDInventors: Zhongyuan Jiang, Ziming Liu, Juebin Wang, Dongchen Che, Hushan Cui, Dongdong Hu, Lu Chen, Huiqun Ren, Zhiwen Zou, Kaidong Xu
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Patent number: 11837439Abstract: Disclosed in the present application is an inductively coupled plasma treatment system. Said system switches the connection between a radio frequency coil and a faraday shielding device by means of a switch switching radio frequency power. When a radio frequency power supply is connected to the radio frequency coil by means of a matched network, the radio frequency power is coupled into the radio frequency coil to perform plasma treatment process. When a radio frequency power supply is connected to a faraday shielding device by means of a matched network, the radio frequency power is coupled into the faraday shielding device to perform cleaning process on a dielectric window and an inner wall of a plasma treatment cavity.Type: GrantFiled: February 26, 2020Date of Patent: December 5, 2023Assignee: JIANGSU LEUVEN INSTRUMENTS CO. LTDInventors: Haiyang Liu, Xiaobo Liu, Xuedong Li, Na Li, Shiran Cheng, Song Guo, Dongdong Hu, Kaidong Xu
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Patent number: 11735400Abstract: Provided are a faraday cleaning device and a plasma processing system, the device comprising a reaction chamber, a bias electrode, a wafer, a chamber cover, a coupling window, an air inlet nozzle, a vertical coil, and a faraday layer, wherein the coupling window is installed at the upper end face of the chamber cover, the chamber cover is installed at the upper end face of the reaction chamber, the bias electrode is assembled inside the reaction chamber, the wafer is installed at the upper end face of the bias electrode, the air inlet nozzle is assembled inside the coupling window, the faraday layer is installed at the upper end face of the coupling window, and the vertical coil is assembled at the upper end face of the faraday layer.Type: GrantFiled: February 26, 2020Date of Patent: August 22, 2023Assignee: JIANGSU LEUVEN INSTRUMENTS CO., LTDInventors: Haiyang Liu, Dongdong Hu, Xiaobo Liu, Na Li, Shiran Cheng, Song Guo, Zhihao Wu, Kaidong Xu
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Publication number: 20220375733Abstract: Provided are a faraday cleaning device and a plasma processing system, the device comprising a reaction chamber, a bias electrode, a wafer, a chamber cover, a coupling window, an air inlet nozzle, a vertical coil, and a faraday layer, wherein the coupling window is installed at the upper end face of the chamber cover, the chamber cover is installed at the upper end face of the reaction chamber, the bias electrode is assembled inside the reaction chamber, the wafer is installed at the upper end face of the bias electrode, the air inlet nozzle is assembled inside the coupling window, the faraday layer is installed at the upper end face of the coupling window, and the vertical coil is assembled at the upper end face of the faraday layer.Type: ApplicationFiled: February 26, 2020Publication date: November 24, 2022Applicant: JIANGSU LEUVEN INSTRUMENTS CO., LTDInventors: Haiyang LIU, Dongdong HU, Xiaobo LIU, Na LI, Shiran CHENG, Song GUO, Zhihao WU, Kaidong XU
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Publication number: 20220319816Abstract: Disclosed is a plasma etching system, comprising a reaction chamber, a base located in the reaction chamber and used for bearing a workpiece, and a dielectric window located on the reaction chamber. Flat plate type electrodes and coil electrodes are provided on the outer surface of the dielectric window; the flat plate type electrodes are located right over the base, and the coil electrodes are arranged in the peripheral regions of the flat plate type electrodes in a surrounding manner; a Faraday shielding layer is further provided between the coil electrodes and the outer surface of the dielectric window.Type: ApplicationFiled: February 26, 2020Publication date: October 6, 2022Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTDInventors: Haiyang LIU, Dongdong HU, Na LI, Xiaobo LIU, Shiran CHENG, Song GUO, Zhihao WU, Kaidong XU
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Publication number: 20220319817Abstract: Disclosed is a plasma processing system with a faraday shielding device. The plasma processing system comprises a reaction chamber, and a faraday shielding device and an air inlet nozzle which are located on the reaction chamber. The air inlet nozzle penetrates through the faraday shielding device to introduce process gas into the reaction chamber. The air inlet nozzle is made of a conductive material, and the air inlet nozzle is electrically connected to the faraday shielding device. According to the plasma processing system, the air inlet nozzle made of the conductive material is electrically connected to the faraday shielding device, when the cleaning process is carried out, reaction gas of the cleaning process in the projection area of the air inlet nozzle is also electrically isolated, the reaction gas of the cleaning process forms a capacitive coupling plasma in the whole region below a dielectric window.Type: ApplicationFiled: February 26, 2020Publication date: October 6, 2022Applicant: JIANGSU LEUVEN INSTRUMENTS CO., LTDInventors: Xuedong LI, Xiaobo LIU, Dongdong HU, Haiyang LIU, Hongbo SUN, Kaidong XU, Lu CHEN
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Publication number: 20220297168Abstract: The present invention provides a rotatable faraday cleaning apparatus and a plasma processing system, said apparatus comprising a cavity cover, a motor, an eccentric wheel, a long-petalled assembly, a coupling window, a gas intake nozzle, a connecting rod, a short-petalled assembly, a first sector-shaped conductor, and a second sector-shaped conductor; the cavity cover is assembled on a reactor cavity main body, the coupling window is mounted on the cavity cover, the gas intake nozzle is provided on the coupling window, the first sector-shaped conductor is assembled on the gas intake nozzle, the second sector-shaped conductor is assembled on the gas intake nozzle, the long-petalled assembly is assembled on the gas intake nozzle, the short-petalled assembly is assembled on the gas intake nozzle, the connecting rod is assembled on the long-petalled assembly, the eccentric wheel is assembled on the connecting rod, and the motor is mounted on the eccentric wheel.Type: ApplicationFiled: February 28, 2020Publication date: September 22, 2022Applicant: JIANGSU LEUVEN INSTRUMENTS CO., LTDInventors: Haiyang LIU, Dongdong HU, Xiaobo LIU, Na LI, Shiran CHENG, Song GUO, Zhihao WU, Kaidong XU
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Publication number: 20220254604Abstract: Disclosed in the present application is an inductively coupled plasma treatment system. Said system switches the connection between a radio frequency coil and a faraday shielding device by means of a switch switching radio frequency power. When a radio frequency power supply is connected to the radio frequency coil by means of a matched network, the radio frequency power is coupled into the radio frequency coil to perform plasma treatment process. When a radio frequency power supply is connected to a faraday shielding device by means of a matched network, the radio frequency power is coupled into the faraday shielding device to perform cleaning process on a dielectric window and an inner wall of a plasma treatment cavity.Type: ApplicationFiled: February 26, 2020Publication date: August 11, 2022Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTDInventors: Haiyang LIU, Xiaobo LIU, Xuedong LI, Na LI, Shiran CHENG, Song GUO, Dongdong HU, Kaidong XU
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Publication number: 20220254605Abstract: Disclosed is a ceramic air inlet radio frequency connection type cleaning device, comprising an etching system, a cleaning system, a power supply control device and a radio frequency cleaning mechanism, wherein the power supply control device is connected to the etching system and the cleaning system and is used for power supply switching; the etching system is connected to two single three-dimensional coil bodies of a three-dimensional coil by means of two lines of a power distribution box so as to etch a wafer in a chamber; and the cleaning system enables the lower surface of a top ceramic air inlet nozzle connected to the radio frequency cleaning mechanism to generate high negative pressure by connecting a radio frequency to the radio frequency cleaning mechanism, such that plasmas directly bombard the lower surface of the top ceramic air inlet nozzle.Type: ApplicationFiled: February 29, 2020Publication date: August 11, 2022Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTDInventors: Haiyang LIU, Dongdong HU, Xuedong LI, Na LI, Shiran CHENG, Jun ZHANG, Zhihao WU, Kaidong XU
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Publication number: 20220254615Abstract: The present invention provides a device for blocking plasma backflow in a process chamber to protect an air inlet structure, comprising an air inlet nozzle tightly connected to an air inlet flange. The inner cavity of the air inlet nozzle is provided with an air inlet guide body, wherein the air inlet guide body has an upper structure, a middle structure, and a lower structure, the upper, middle, and lower structures are an integrated structure, the upper, middle, and lower structures are all cylindrical, the cross-sectional diameter of the upper structure is smaller than that of the middle structure, a gas gathering area is arranged between the middle structure and the lower structure, and the middle structure and the lower structure are connected by the gas gathering area.Type: ApplicationFiled: February 29, 2020Publication date: August 11, 2022Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTDInventors: Na LI, Dongdong HU, Xiaobo LIU, Haiyang LIU, Shiran CHENG, Song GUO, Zhihao WU, Kaidong XU
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Patent number: 11373842Abstract: An ion beam etching system includes an etching cavity, an etching electrode, and an electrode displacement apparatus used for enabling the electrode to change a working position in the etching cavity. The electrode displacement apparatus includes a dynamic sealing mechanism, a dynamic electrode balance counterweight mechanism, an electrode displacement transmission mechanism, and an electrode displacement driving mechanism. The etching cavity includes a cavity and a cavity cover connected with the cavity. The cavity is of an irregular shape. The cavity includes a partial cylindrical body, a side plate, a tapered transition portion, and a bottom plate. The partial cylindrical body is laterally sealed by means of the side plate. The bottom plate is connected to an end of the partial cylindrical body by means of the tapered transition portion and seals the end of the partial cylindrical body.Type: GrantFiled: June 28, 2018Date of Patent: June 28, 2022Assignee: JIANGSU LEUVEN INSTRUMENTS CO. LTDInventors: Na Li, Dongdong Hu, Kaidong Xu
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Patent number: 11282731Abstract: A wafer cutting device comprises an etching unit, including a wafer holding device and a fluid guide shroud; a gas supply unit; and a chemical reaction liquid supply unit. The wafer holding device includes a carrier disk, which is configured to fix a wafer for cutting and provided with gas apertures, and a gas passage disposed below the carrier disk. The fluid guide shroud is a double-layer structure including an inner layer, an outer layer and a hollow interlayer, located above the wafer holding device and has adjustable spacing with the wafer holding device, and regulates a flow direction of a chemical reaction liquid and protective gases. The gas supply unit supplies a protective gas to the inner layer of the shroud and supplies a protective gas to the carrier disk through the gas apertures. The chemical reaction liquid supply unit supplies the chemical reaction liquid to the interlayer.Type: GrantFiled: January 18, 2019Date of Patent: March 22, 2022Assignee: JIANGSU LEUVEN INSTRUMENTS CO. LTDInventor: Kaidong Xu
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Publication number: 20210399216Abstract: Disclosed is method for etching a magnetic tunnel junction. An etching apparatus used comprises a sample loading chamber, a vacuum transition chamber, a reactive ion plasma etching chamber, an ion beam etching chamber, a film coating chamber and a vacuum transport chamber. The method comprises multiple performances of the steps of reactive ion and plasma etching, ion beam etching and film coating. Multiple performances of entry into and exit from the chambers are required during the process, and the delivery between the chambers is performed under vacuum.Type: ApplicationFiled: May 23, 2019Publication date: December 23, 2021Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTDInventors: Ziming LIU, Juebin WANG, Zhongyuan JIANG, Dongchen CHE, Hushan CUI, Dongdong HU, Lu CHEN, Hongyue SUN, Dajian HAN, Kaidong XU
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Publication number: 20210399217Abstract: A semiconductor device manufacturing method, wherein the etching apparatus used includes a sample loading chamber (15), a vacuum transition chamber (14), a reactive ion plasma etching chamber (10), an ion beam etching chamber (11), a film coating chamber (12), and a vacuum transport chamber (13). Without interrupting the vacuum, reactive ion etching is first adopted to etch to an isolation layer (102); then, ion beam etching is performed to etch into a fixed layer (101) and stopped near a bottom electrode metal layer (100), leaving only a small amount of the fixed layer (101); subsequently, reactive ion etching is adopted to etch to the bottom electrode metal layer (100); and finally, ion beam cleaning is performed to remove metal residues and sample surface treatment, and coating protection is performed.Type: ApplicationFiled: May 23, 2019Publication date: December 23, 2021Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTDInventors: Zhongyuan JIANG, Ziming LIU, Juebin WANG, Dongchen CHE, Hushan CUI, Dongdong HU, Lu CHEN, Huiqun REN, Zhiwen ZOU, Kaidong XU
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Publication number: 20210376232Abstract: A multilayer magnetic tunnel junction etching method and an MRAM device. A wafer is processed according to particular steps without interrupting vacuum. A reactive ion plasma etching chamber (10) and an ion beam etching chamber (11) are used separately at least one time. The processing of a multilayer magnetic tunnel junction is always in a vacuum environment, thereby avoiding the impact of an external environment on etching. By means of the process of combining etching and cleaning, a device structure maintains good steepness, and the metal contamination and damage of a magnetic tunnel junction film structure are significantly decreased, thereby greatly increasing the performance and reliability of a device. In addition, use of both the ion beam etching chamber (11) and the reactive ion plasma etching chamber (10) solves the technical problem of an existing single etching method, and increases production efficiency and etching process precision.Type: ApplicationFiled: May 23, 2019Publication date: December 2, 2021Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTDInventors: Juebin WANG, Zhongyuan JIANG, Ziming LIU, Dongchen CHE, Hushan CUI, Dongdong HU, Lu CHEN, Dajian HAN, Zhiwen ZOU, Kaidong XU
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Patent number: 11031260Abstract: A hydrogen fluoride vapor phase corrosion method comprises: introducing a prescribed vaporized organic liquid into a reaction chamber after a vapor phase hydrogen fluoride containing water reacts, in the reaction chamber, with a wafer; the prescribed vaporized organic liquid, and the water remaining on a surface of the wafer form an azeotropic mixture; and evaporating or volatilizing the azeotropic mixture from the surface of the wafer to carry it out.Type: GrantFiled: June 27, 2019Date of Patent: June 8, 2021Assignee: JIANGSU LEUVEN INSTRUMENTS CO LTDInventor: Kaidong Xu
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Patent number: 10734253Abstract: Disclosed is a wafer processing apparatus and method. The wafer processing apparatus comprises a chamber, which is a sealed structure having an openable baffle, and is internally provided with an immersion tank having a waste liquid discharge port; a vacuum system for adjusting and maintaining a pressure inside the chamber; a gas supply system comprising an inert gas supply unit and an organic solvent vapor supply unit respectively supplying an inert gas and an organic solvent vapor to the chamber; a temperature control system for adjusting the temperature inside the chamber. According to the present invention, the problems present in existing wafer drying modes can be solved, and in particular, the present invention is well adaptable to a trend of integrated circuit devices developed from a two-dimensional planar structure to a three-dimensional structure in morphology and having more and more increased density.Type: GrantFiled: November 20, 2018Date of Patent: August 4, 2020Assignee: JIANGSU LEUVEN INSTRUMENTS CO. LTDInventor: Kaidong Xu
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Publication number: 20200161088Abstract: An ion beam etching system includes an etching cavity, an etching electrode, and an electrode displacement apparatus used for enabling the electrode to change a working position in the etching cavity. The electrode displacement apparatus includes a dynamic sealing mechanism, a dynamic electrode balance counterweight mechanism, an electrode displacement transmission mechanism, and an electrode displacement driving mechanism. The etching cavity includes a cavity and a cavity cover connected with the cavity. The cavity is of an irregular shape. The cavity includes a partial cylindrical body, a side plate, a tapered transition portion, and a bottom plate. The partial cylindrical body is laterally sealed by means of the side plate. The bottom plate is connected to an end of the partial cylindrical body by means of the tapered transition portion and seals the end of the partial cylindrical body.Type: ApplicationFiled: June 28, 2018Publication date: May 21, 2020Applicant: JIANGSU LEUVEN INSTRUMENTS CO. LTDInventors: Na LI, Dongdong HU, Kaidong XU