Abstract: A preparation method for an N-type TOPCon cell comprising 1) texturing an N-type silicon wafer with an alkaline solution; 2) performing boron diffusion and laser lightly-doping on a front face of the wafer to form a lightly-doped region, and performing re-diffusion to form a front mask; 3) polishing a back face of the wafer; 4) performing three-in-one multi-layer thin film deposition on the back face of the wafer, to grow a tunneling silicon oxide thin film layer, a doped amorphous silicon thin film layer, and a back mask; 5) performing high-temperature annealing under a preset high-temperature condition to form a doped polysilicon layer and activate doped phosphorus; 6) cleaning the front mask on the front face and back mask on the back face of the wafer; 7) depositing passivation films on the front face and back face of the N wafer; and 8) printing and sintering.

Abstract: A preparation method of a low-cost passivated contact full-back electrode solar cell includes: performing alkali polishing on a Si wafer; performing RCA cleaning and HF cleaning; growing a tunnel SiOx film layer, an in-situ doped amorphous Si film layer, and a texturing mask layer on the back of the Si wafer; performing annealing activation on the amorphous Si film layer to form a polycrystalline Si film layer; etching the texturing mask layer; performing double-sided texturing on the Si wafer; performing HF cleaning to remove the texturing mask layer; depositing an AlOx film on the front and back of the Si wafer; depositing a SiNx passivation film on the front and back of the Si wafer; ablating a part of the AlOx film and a part of the SiNx passivation film on the back of the Si wafer; and performing screen-printing and sintering on the back of the Si wafer.

Abstract: A preparation method of a low-cost passivated contact full-back electrode solar cell includes: performing alkali polishing on a Si wafer; performing RCA cleaning and HF cleaning; growing a tunnel SiOx film layer, an in-situ doped amorphous Si film layer, and a texturing mask layer on the back of the Si wafer; performing annealing activation on the amorphous Si film layer to form a polycrystalline Si film layer; etching the texturing mask layer; performing double-sided texturing on the Si wafer; performing HF cleaning to remove the texturing mask layer; depositing an AlOx film on the front and back of the Si wafer; depositing a SiNx passivation film on the front and back of the Si wafer; ablating a part of the AlOx film and a part of the SiNx passivation film on the back of the Si wafer; and performing screen-printing and sintering on the back of the Si wafer.