Abstract: A device for evaporation of a solution based on solvent and compounds or solutes inside an enclosure comprises different evaporation zones separated by separating partitions into several distinct elementary chambers enabling fractionated evaporation via outlets generating a plurality of separate vapor flows specific to each constituent. The solution is injected into the first chamber subjected to the lowest temperature so as to impregnate a porous mobile element that passes through the different partitions, being successively in contact with said chambers heated to increasing temperatures. A neutral carrier gas is injected in the vicinity of the partitions for control of the pressure losses of the gas flows between the different chamber.

Abstract: A heating device infrared radiation lamps 24, 26 designed to perform rapid thermal processing of the substrate 12 inside a reaction chamber 14 with a transparent window 34. The infrared lamps 24, 26 are arranged in two superposed stages A, B extending on a single side of the substrate 12, the lamps 24 of the lower stage A being arranged perpendicularly with respect to the lamps 26 of the upper stage B. Adjusting the supply power by of lamps for greater heating on the edges than in the center of the substrate 12. A reflector 36 in the form of a distribution grid 38 is designed to reflect the infrared radiation to control the power ratios between the different heating zones. This results in uniform heating of the substrate 12 regardless of the geometry and dimensions thereof.

Abstract: An apparatus for liquid delivery of a chemical vapour deposition CVD installation comprises an inlet head equipped with at least one injector having an inlet for delivery of liquid precursors or precursors in solution. A vector gas injection circuit is rendered active simultaneously with injection of the liquid, the vector gas being directed to the vicinity of the injector after being heated. Each injector is cooled individually by water or coolant flow. The evaporation chamber comprises heating resistances for the change of liquid/vapor state of the precursors, and deviation means arranged so that the distance covered by the droplets and vapours of the precursors is greater than the distance in a straight line between the nozzle of the injector and the outlet tube.

Abstract: A process for processing or forming a material by electromagnetic radiation and in a controlled atmosphere or in a vacuum inside a reaction chamber uses a first infrared radiation causing rapid heating and a second ultraviolet radiation of the excimer type having a spectral resolution lower than 40 nm, regardless of the wavelength of the ultraviolet radiation, so as to generate a suitable photon flux either for modification of the physico-chemical properties of the material or for formation of a deposit on the substrate. The exposure time of the second ultraviolet radiation is lower than that of the first infrared radiation and the processing temperature is comprised between 70° C. and 800° C. depending on the nature of the material and of the substrate.