Patents Assigned to Jordan Valley Semiconductor Ltd.
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Patent number: 9269468Abstract: An X-ray optical device includes a crystal containing a channel, which passes through the crystal and has multiple internal faces. A mount is configured to hold the crystal in a fixed location relative to a source of an X-ray beam and to shift the crystal automatically between two predefined dispositions: a first disposition in which the X-ray beam passes through the channel while diffracting from one or more of the internal faces, and a second disposition in which the X-ray beam passes through the channel without diffraction by the crystal.Type: GrantFiled: April 29, 2013Date of Patent: February 23, 2016Assignee: Jordan Valley Semiconductors Ltd.Inventors: Paul Anthony Ryan, John Leonard Wall, John Spence
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Patent number: 8867041Abstract: An optical metrology apparatus for measuring nanoimprint structures using Vacuum Ultra-Violet (VUV) light is described. Focusing optics focus light onto the sample and collect the light reflected from the sample so as to record an optical response from nanoimprint structures on the sample, wherein the nanoimprint structures have an orientation that varies over a surface of the sample. A sample stage is configured to support the sample. At least one computer is connected to the metrology instrument and the sample stage and is configured to run a computer program which causes the sample stage to rotate the sample so as to present multiple different locations on the sample to the optical metrology instrument such that the orientation of the nanoimprint structures at the multiple different locations remains fixed with respect to a plane of the focusing optics of the metrology instrument in order to eliminate polarization effects.Type: GrantFiled: January 15, 2012Date of Patent: October 21, 2014Assignee: Jordan Valley Semiconductor LtdInventors: Phillip Walsh, Jeffrey B. Hurst, Dale A. Harrison
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Publication number: 20140286473Abstract: A method for inspection includes capturing an optical image of one or more features on a surface of a sample and irradiating an area of the sample containing at least one of the features with an X-ray beam. An intensity of X-ray fluorescence emitted from the sample in response to the irradiating X-ray beam is measured. The optical image is processed so as to extract geometrical parameters of the at least one of the features and to compute a correction factor responsively to the geometrical parameters. The correction factor is applied to the measured intensity in order to derive a property of the at least one of the features.Type: ApplicationFiled: March 23, 2014Publication date: September 25, 2014Applicant: JORDAN VALLEY SEMICONDUCTORS LTD.Inventors: Alex Tokar, Alex Dikopoltsev, Isaac Mazor, Matthew Wormington
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Patent number: 8781070Abstract: Apparatus for inspection of a disk, which includes a crystalline material and has first and second sides. The apparatus includes an X-ray source, which is configured to direct a beam of X-rays to impinge on an area of the first side of the disk. An X-ray detector is positioned to receive and form input images of the X-rays that are diffracted from the area of the first side of the disk in a reflective mode. A motion assembly is configured to rotate the disk relative to the X-ray source and detector so that the area scans over a circumferential path in proximity to an edge of the disk. A processor is configured to process the input images formed by the X-ray detector along the circumferential path so as to generate a composite output image indicative of defects along the edge of the disk.Type: GrantFiled: August 9, 2012Date of Patent: July 15, 2014Assignee: Jordan Valley Semiconductors Ltd.Inventors: Matthew Wormington, Paul Ryan, John Leonard Wall
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Patent number: 8731138Abstract: A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having an epitaxial layer formed thereon, and sensing the X-rays that are diffracted from the sample while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum including a diffraction peak and fringes due to the epitaxial layer. A characteristic of the fringes is analyzed in order to measure a relaxation of the epitaxial layer.Type: GrantFiled: July 12, 2012Date of Patent: May 20, 2014Assignee: Jordan Valley Semiconductor Ltd.Inventors: Boris Yokhin, Isaac Mazor, Alexander Krohmal, Amos Gvirtzman, Gennady Openganden, David Berman, Matthew Wormington
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Patent number: 8693635Abstract: An X-ray detector assembly includes an integrated circuit, which includes an array of detector elements and a readout circuit adjacent to the array and coupled to read charge out of the detector elements. A non-metallic shield is positioned over the readout circuit so as to prevent X-rays from striking the readout circuit.Type: GrantFiled: June 9, 2013Date of Patent: April 8, 2014Assignee: Jordan Valley Semiconductor Ltd.Inventor: Alexander Krohmal
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Patent number: 8687766Abstract: A method for analysis includes directing a converging beam of X-rays toward a surface of a sample and sensing the X-rays that are diffracted from the sample while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum of the sample. The diffraction spectrum is corrected to compensate for a non-uniform property of the converging beam.Type: GrantFiled: July 12, 2011Date of Patent: April 1, 2014Assignee: Jordan Valley Semiconductors Ltd.Inventors: Matthew Wormington, Alexander Krohmal, David Berman, Gennady Openganden
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Publication number: 20130287178Abstract: An X-ray optical device includes a crystal containing a channel, which passes through the crystal and has multiple internal faces. A mount is configured to hold the crystal in a fixed location relative to a source of an X-ray beam and to shift the crystal automatically between two predefined dispositions: a first disposition in which the X-ray beam passes through the channel while diffracting from one or more of the internal faces, and a second disposition in which the X-ray beam passes through the channel without diffraction by the crystal.Type: ApplicationFiled: April 29, 2013Publication date: October 31, 2013Applicant: Jordan Valley Semiconductors Ltd.Inventors: Paul Anthony Ryan, John Leonard Wall, John Spence
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Patent number: 8565379Abstract: Apparatus for inspection of a sample includes an X-ray source, which is configured to irradiate a location on the sample with a beam of X-rays. An X-ray detector is configured to receive the X-rays that are scattered from the sample and to output a first signal indicative of the received X-rays. A VUV source is configured to irradiate the location on the sample with a beam of VUV radiation. A VUV detector is configured to receive the VUV radiation that is reflected from the sample and to output a second signal indicative of the received VUV radiation. A processor is configured to process the first and second signals in order to measure a property of the sample.Type: GrantFiled: March 14, 2012Date of Patent: October 22, 2013Assignee: Jordan Valley Semiconductors Ltd.Inventors: Isaac Mazor, Matthew Wormington, Ayelet Dag, Bagrat Khachatryan
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Patent number: 8564780Abstract: A method and apparatus is disclosed for using below deep ultra-violet (DUV) wavelength reflectometry for measuring properties of diffracting and/or scattering structures on semiconductor work-pieces is disclosed. The system can use polarized light in any incidence configuration, but one technique disclosed herein advantageously uses un-polarized light in a normal incidence configuration. The system thus provides enhanced optical measurement capabilities using below deep ultra-violet (DUV) radiation, while maintaining a small optical module that is easily integrated into other process tools. A further refinement utilizes an r-? stage to further reduce the footprint.Type: GrantFiled: July 28, 2010Date of Patent: October 22, 2013Assignee: Jordan Valley Semiconductors Ltd.Inventors: Phillip Walsh, Dale Harrison
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Patent number: 8437450Abstract: A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having multiple single-crystal layers, including at least a first layer and a second layer that is formed over and tilted relative to the first layer. The X-rays that are diffracted from each of the first and second layers are sensed simultaneously while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum including at least a first diffraction peak due to the first layer and a second diffraction peak due to the second layer. The diffraction spectrum is analyzed so as to identify a characteristic of at least the second layer.Type: GrantFiled: December 2, 2010Date of Patent: May 7, 2013Assignee: Jordan Valley Semiconductors Ltd.Inventors: John Wall, David Jacques, Boris Yokhin, Alexander Krokhmal, Paul Ryan, Richard Bytheway, David Berman, Matthew Wormington
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Publication number: 20130089178Abstract: A method for inspection includes irradiating, with a focused beam, a feature formed on a semiconductor wafer, the feature including a volume containing a first material and a cap made of a second material, different from the first material, that is formed over the volume. One or more detectors positioned at different angles relative to the feature are used to detect X-ray fluorescent photons that are emitted by the first material in response to the irradiating beam and pass through the cap before striking the detectors. Signals output by the one or more detectors at the different angles in response to the detected photons are processed in order to assess a quality of the cap.Type: ApplicationFiled: October 9, 2012Publication date: April 11, 2013Applicant: JORDAN VALLEY SEMICONDUCTORS LTD.Inventor: Jordan Valley Semiconductors Ltd.
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Publication number: 20130039471Abstract: Apparatus for inspection of a disk, which includes a crystalline material and has first and second sides. The apparatus includes an X-ray source, which is configured to direct a beam of X-rays to impinge on an area of the first side of the disk. An X-ray detector is positioned to receive and form input images of the X-rays that are diffracted from the area of the first side of the disk in a reflective mode. A motion assembly is configured to rotate the disk relative to the X-ray source and detector so that the area scans over a circumferential path in proximity to an edge of the disk. A processor is configured to process the input images formed by the X-ray detector along the circumferential path so as to generate a composite output image indicative of defects along the edge of the disk.Type: ApplicationFiled: August 9, 2012Publication date: February 14, 2013Applicant: JORDAN VALLEY SEMICONDUCTORS LTD.Inventors: Matthew Wormington, Paul Ryan, John Leonard Wall
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Publication number: 20120281814Abstract: A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having an epitaxial layer formed thereon, and sensing the X-rays that are diffracted from the sample while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum including a diffraction peak and fringes due to the epitaxial layer. A characteristic of the fringes is analyzed in order to measure a relaxation of the epitaxial layer.Type: ApplicationFiled: July 12, 2012Publication date: November 8, 2012Applicant: JORDAN VALLEY SEMICONDUCTORS LTDInventors: Boris Yokhin, Isaac Mazor, Alexander Krohmal, Amos Gvirtzman, Gennady Openganden, David Berman, Matthew Wormington
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Publication number: 20120275568Abstract: Apparatus for inspection of a sample includes an X-ray source, which is configured to irradiate a location on the sample with a beam of X-rays. An X-ray detector is configured to receive the X-rays that are scattered from the sample and to output a first signal indicative of the received X-rays. A VUV source is configured to irradiate the location on the sample with a beam of VUV radiation. A VUV detector is configured to receive the VUV radiation that is reflected from the sample and to output a second signal indicative of the received VUV radiation. A processor is configured to process the first and second signals in order to measure a property of the sample.Type: ApplicationFiled: March 14, 2012Publication date: November 1, 2012Applicant: JORDAN VALLEY SEMICONDUCTORS LTD.Inventors: Isaac Mazor, Matthew Wormington, Ayelet Dag, Bagrat Khachatryan
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Patent number: 8243878Abstract: A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having an epitaxial layer formed thereon, and sensing the X-rays that are diffracted from the sample while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum including a diffraction peak and fringes due to the epitaxial layer. A characteristic of the fringes is analyzed in order to measure a relaxation of the epitaxial layer.Type: GrantFiled: January 7, 2010Date of Patent: August 14, 2012Assignee: Jordan Valley Semiconductors Ltd.Inventors: Boris Yokhin, Isaac Mazor, Alexander Krohmal, Amos Gvirtzman, Gennady Openganden, David Berman, Matthew Wormington
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Publication number: 20120182542Abstract: An optical metrology apparatus for measuring nanoimprint structures using Vacuum Ultra-Violet (VUV) light is described.Type: ApplicationFiled: January 15, 2012Publication date: July 19, 2012Applicant: Jordan Valley Semiconductors Ltd.Inventors: Phillip Walsh, Jeffrey B. Hurst, Dale A. Harrison
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Publication number: 20120140889Abstract: A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having multiple single-crystal layers, including at least a first layer and a second layer that is formed over and tilted relative to the first layer. The X-rays that are diffracted from each of the first and second layers are sensed simultaneously while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum including at least a first diffraction peak due to the first layer and a second diffraction peak due to the second layer. The diffraction spectrum is analyzed so as to identify a characteristic of at least the second layer.Type: ApplicationFiled: December 2, 2010Publication date: June 7, 2012Applicant: JORDAN VALLEY SEMICONDUCTORS LTD.Inventors: John Wall, David Jacques, Boris Yokhin, Alexander Krokhmal, Paul Ryan, Richard Bytheway, David Berman, Matthew Wormington
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Patent number: 8153987Abstract: A calibration pad having multiple calibration sites is provided. A particular calibration site may be utilized until that particular site has been determined to have become unacceptable for further use, for example from contamination, in which case the calibration processes may then move to use a different calibration site(s) on the calibration pad(s). A variety of techniques may be utilized to provide the determination that a site is no longer acceptable for use. Movement may thus occur over time from site to site for use in a calibration process. A variety of criteria may be established to determine when to move to another site. Though the designation of a site as “bad” may be based upon measured reflectance data, other criteria may also be used. For example, the number of times a site has been exposed to light may be the criteria for designating a site as bad. Alternatively the cumulative exposure of a site may be the criteria.Type: GrantFiled: May 22, 2009Date of Patent: April 10, 2012Assignee: Jordan Valley Semiconductors Ltd.Inventors: Jeffrey B. Hurst, Matthew Weldon, Phillip Walsh, Cristian Rivas, Dale A. Harrison
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Patent number: 8119991Abstract: A calibration technique is provided that utilizes a standard sample that allows for calibration in the wavelengths of interest even when the standard sample may exhibit significant reflectance variations at those wavelengths for subtle variations in the properties of the standard sample. A second sample, a reference sample may have a relatively featureless reflectance spectrum over the same spectral region and is used in combination with the calibration sample to achieve the calibration. In one embodiment the spectral region may include the VUV spectral region.Type: GrantFiled: August 12, 2010Date of Patent: February 21, 2012Assignee: Jordan Valley Semiconductors Ltd.Inventor: Dale A Harrison