Abstract: A method for producing X-ray optics includes providing a wafer of crystalline material having front and rear surfaces and a lattice spacing suitable for reflecting incident X-rays of a given wavelength. A thin film is deposited on the front surface of the wafer so as to generate compressive forces in the thin film sufficient to impart a concave curvature to the rear surface of the wafer with at least one radius of curvature selected for focusing the incident X-rays.
Abstract: Apparatus for analysis of a sample includes a radiation source, which is configured to direct a beam of radiation along a beam axis to impinge on a target area on a surface of the sample. A detector assembly is configured to sense the radiation scattered from the sample. A beam control assembly includes a beam blocker, which has a lower side adjoining the surface of the sample, and which contains front and rear slits perpendicular to the lower side that together define a beam plane that contains the beam axis and passes through the target area. The front slit is located between the radiation source and the target area, and the rear slit is located between the target area and the detector assembly.
Abstract: A method for analysis of a sample includes irradiating an area of the sample with a polychromatic X-ray beam. X-rays scattered from the sample are detected using a plurality of detectors simultaneously in different, respective positions, whereby the detectors generate respective outputs. Energy-dispersive processing is applied to the outputs of the detectors so as to identify one or more X-ray diffraction lines of the sample.
Type:
Grant
Filed:
September 15, 2006
Date of Patent:
January 22, 2008
Assignee:
Jordan Valley Semiconductors Ltd.
Inventors:
Boris Yokhin, Alexander Krokhmal, Alex Tokar