Patents Assigned to Jozef Stefan Institute
  • Patent number: 10191161
    Abstract: A handheld device for the location and identification of a radiation source, including: a radiation transparent housing; a radiation locator device disposed within the radiation transparent housing operable for determining the location of the radiation source, wherein the radiation locator device includes a plurality of gamma detection crystals arranged in a geometric pattern and separated by a gamma shielding material, a plurality of detectors coupled to the plurality of gamma detection crystals, and a processor module coupled to the plurality of detectors; one or more of a neutron detection crystal and a gamma spectroscopy crystal disposed within the radiation transparent housing adjacent to the radiation locator device; and one or more detectors coupled to the one or more of the neutron detection crystal and the gamma spectroscopy crystal and the processor module; wherein the one or more of the neutron detection crystal and the gamma spectroscopy crystal, the one or more detectors, and the processor module
    Type: Grant
    Filed: May 3, 2017
    Date of Patent: January 29, 2019
    Assignees: Consolidated Nuclear Security, LLC, Jozef Stefan Institute, AlSense d.o.o
    Inventors: Matjaz Vencelj, Toni Petrovic, Andrej Kosicek, Ashley C. Stowe, Jonathan S. Morrell
  • Patent number: 10105318
    Abstract: The object of the present invention is low-dimensional, primarily 2D folded structures of organic and/or inorganic substances and/or their agglomerates, which have folds and faces of irregular shape and exhibit high local electric field strength generated by surface charges on the said folds, faces and edges, and use thereof: as sorbents of organic particles (molecules, bacteria, viruses, proteins, antigens, endotoxins) and inorganic particles (metal ions, colloids); as an agent with wound healing and antibacterial activity; as an agent for tumor cell growth inhibition.
    Type: Grant
    Filed: November 19, 2015
    Date of Patent: October 23, 2018
    Assignees: Institute of Strength Physics and Materials Science of Siberian Branch Russian Academy of Sciences (ISPMS SB RAS), Jozef Stefan Institute, National Research Tomsk Polytechnic University (TPU)
    Inventors: Sergey G. Psakhie, Marat I. Lerner, Elena A. Glazkova, Olga V. Bakina, Olga Vasiljeva, Georgy A. Mikhaylov, Boris Turk
  • Patent number: 10054697
    Abstract: A device for sensing, locating, and characterizing a radiation emitting source, including: a detection crystal having dimensions great enough such that regional differences in radiation response are generated in the detection crystal by radiation impinging on one or more surfaces of the detection crystal; and a plurality of detectors one or more of coupled to and disposed on a plurality of surfaces of the detection crystal operable for detecting the regional differences in radiation response generated in the detection crystal by the radiation impinging on the one or more surfaces of the detection crystal.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: August 21, 2018
    Assignees: Consolidated Nuclear Security, LLC, Jozef Stefan Institute, AISense D.O.O.
    Inventors: Matjaz Vencelj, Ashley C. Stowe, Toni Petrovic, Jonathan S. Morrell, Andrej Kosicek
  • Patent number: 9978469
    Abstract: A radiation area monitor device/method, utilizing: a radiation sensor having a directional radiation sensing capability; a rotation mechanism operable for selectively rotating the radiation sensor such that the directional radiation sensing capability selectively sweeps an area of interest; and a processor operable for analyzing and storing a radiation fingerprint acquired by the radiation sensor as the directional radiation sensing capability selectively sweeps the area of interest. Optionally, the radiation sensor includes a gamma and/or neutron radiation sensor. The device/method selectively operates in: a first supervised mode during which a baseline radiation fingerprint is acquired by the radiation sensor; and a second unsupervised mode during which a subsequent radiation fingerprint is acquired by the radiation sensor, wherein the subsequent radiation fingerprint is compared to the baseline radiation fingerprint and, if a predetermined difference threshold is exceeded, an alert is issued.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: May 22, 2018
    Assignees: Consolidated Nuclear Security, LLC, Jozef Stefan Institute, AISense d.o.o
    Inventors: Matjaz Vencelj, Ashley C. Stowe, Toni Petrovic, Jonathan S. Morrell, Andrej Kosicek
  • Patent number: 9969847
    Abstract: The present invention relates to a method of producing liquid crystal elastomer (LCE) based components. The method comprises the steps of (i) providing or creating micro-sized or nano-sized LCE particles, (ii) dispersing the particles in an uncured liquid polymer, (iii) aligning the nematic directors of the particles and, (iv) shaping and curing the matrix/particles mixture. The composite material formed by this method is a polymer dispersed liquid crystal elastomer (PDLCE) with custom-tailored properties which can be shaped into arbitrary forms.
    Type: Grant
    Filed: March 17, 2015
    Date of Patent: May 15, 2018
    Assignee: JOZEF STEFAN INSTITUTE
    Inventors: Andraz Resetic, Jerneja Milavec, Blaz Zupancic, Bostjan Zalar
  • Patent number: 9881708
    Abstract: A radiation area monitor device/method, utilizing: a radiation sensor; a rotating radiation shield disposed about the radiation sensor, wherein the rotating radiation shield defines one or more ports that are transparent to radiation; and a processor operable for analyzing and storing a radiation fingerprint acquired by the radiation sensor as the rotating radiation shield is rotated about the radiation sensor. Optionally, the radiation sensor includes a gamma and/or neutron radiation sensor.
    Type: Grant
    Filed: April 12, 2017
    Date of Patent: January 30, 2018
    Assignees: Consolidated Nuclear Security, LLC, Jozef Stefan Institute, AISense d.o.o.
    Inventors: Matjaz Vencelj, Ashley C. Stowe, Toni Petrovic, Jonathan S. Morrell, Andrej Kosicek
  • Patent number: 9818479
    Abstract: Discloses is an electronic device and a method for its operation. The device has first and second electrodes and an active material. The active material has selectable and stable first and second macroscopic quantum states, such as charge density wave ordered states, having respectively first and second values of electrical resistivity ?1 and ?2 at the same temperature. ?1 is at least 2 times ?2. The method includes the step of switching between the first and second macroscopic quantum states by injection of current via the electrodes.
    Type: Grant
    Filed: July 17, 2015
    Date of Patent: November 14, 2017
    Assignee: JOZEF STEFAN INSTITUTE
    Inventors: Igor Vaskivskyi, Dragan D. Mihailović, Ian A. Mihailović
  • Patent number: 8987097
    Abstract: High performance thin-film, transistors are entirely processed at temperatures not exceeding 150° C., using amorphous multi component dielectrics based on the mixture of high band gap and high dielectric constant (K) materials. The sputtered or ink jet printed mixed dielectric materials such as Ta2O5 with SiO2 or Al2O3 or HfO2 with SiO2 or Al2O3 are used. These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with low leakage currents, while preserving a high dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga—In—Zn oxide as channel layers and where the dielectric was the combination of the mixture Ta2O5:SiO2, exhibiting field-effect mobility exceeding 35 cm2 V?1 s?1, close to 0 V turn-on voltage, on/off ratio higher than 106 and subthreshold slope below 0.24 V dec?1.
    Type: Grant
    Filed: August 5, 2010
    Date of Patent: March 24, 2015
    Assignees: Faculdad de Ciencias e Tecnologia da Universidad Nova de Lisboa, Jozef Stefan Institute, Universidad de Barcelona
    Inventors: Rodrigo Ferrão De Paiva Martins, Elvira Maria Correia Fortunato, Pedro Miguel Cândido Barquinha, Luis Miguel Nunes Pereira, Gonçalo Pedro Gonçalves, Danjela Kuscer Hrovatin, Marija Kosec
  • Publication number: 20140186268
    Abstract: The present invention relates to methods for producing oxide ferrimagnetics with spinel structure and iron oxide nanoparticles by soft mechanochemical synthesis using inorganic salt hydrates, oxide ferrimagnetics with spinel structure and iron oxide nanoparticles of ultra-small size and high specific surface area obtainable by the methods, biocompatible aqueous colloidal systems comprising oxide ferrimagnetics with spinel structure and iron oxide nanoparticles, carriers comprising oxide ferrimagnetics with spinel structure and iron oxide nanoparticles, and uses thereof in medicine.
    Type: Application
    Filed: February 4, 2014
    Publication date: July 3, 2014
    Applicants: Jozef Stefan Institute, Institute of Strength Physics and Materials Science of Siberian Branch Russian Academy of Scie
    Inventors: Olga VASILJEVA, Volya I. ITIN, Sergey G. PSAKHIE, Georgy A. MIKHAYLOV, Mojca Urska MIKAC, Boris TURK, Anna A. MAGAEVA, Evgeniy P. NAIDEN, Olga G. TEREKHOVA
  • Patent number: 8535434
    Abstract: It is describes a material in the form of lithium fluoride powder containing color centers and the method for its preparation, by the formation of color centers based on irradiating the powder with synchrotron radiation (light). The method involves mechanically reducing the size of the particles that form the LiF powder and the formation of color centers therein by its exposure to synchrotron radiation. The so activated powder, which maintains the transparency characteristics of the original material if exposed to sunlight, can find wide use as an additive both in common printing inks and in pigments used in the artistic field to be used for the formation of marks on artifacts for anti-counterfeiting/identification purposes.
    Type: Grant
    Filed: December 17, 2010
    Date of Patent: September 17, 2013
    Assignees: Ellettra-Sincrotrone Trieste Societa' Consortile per Azioni, Jozef Stefan Institute
    Inventors: Luca Gregoratti, Marco Peloi, Marija Kosec, Danjela Kuscer Hrovatin, Giuseppina Palma
  • Publication number: 20120248445
    Abstract: High performance thin-film, transistors are entirely processed at temperatures not exceeding 150° C., using amorphous multi component dielectrics based on the mixture of high band gap and high dielectric constant (K) materials. The sputtered or ink jet printed mixed dielectric materials such as Ta2O5 with SiO2 or Al2O3 or HfO2 with SiO2 or Al2O3 are used. These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with low leakage currents, while preserving a high dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga—In—Zn oxide as channel layers and where the dielectric was the combination of the mixture Ta2O5:SiO2, exhibiting field-effect mobility exceeding 35 cm2 V?1 s?1, close to 0 V turn-on voltage, on/off ratio higher than 106 and subthreshold slope below 0.24 V dec?1.
    Type: Application
    Filed: August 5, 2010
    Publication date: October 4, 2012
    Applicants: Faculdad de Ciencias e Technologia da Universidade Nova de Lisboa, Universidad de Barcelona, Jozef Stefan Institute
    Inventors: Rodrigo Ferrão De Paiva Martins, Elvira Maria Correia fortunato, Pedro Miguel Cândido Barquinha, Luís Miguel Nunes Pereira, Gonçalo Pedro Gonçalves, Danjela Kuscer Hrovatin, Marija Kosec
  • Publication number: 20070274895
    Abstract: The present Invention relates a quasi-one-dimensional material with sub-micron cross-section described by the formula M6CyHz, where the M=transition metal, C=chalcogen, H=halogen, and where y and z are integers such that 8.2<y+z<10, which materials are synthesized in a Single-step procedure at temperatures above 1000° C. The present invention also concerns the use of these materials in electronic, chemical, optical or mechanical applications.
    Type: Application
    Filed: February 25, 2004
    Publication date: November 29, 2007
    Applicant: Jozef Stefan Institute
    Inventors: Adolf Jesih, Dragan Mihailovic, Maja Remskar, Ales Mrzel, Daniel Vrbanic