Abstract: A method and apparatus of fabricating a thin film transistor is disclosed, which patterns an ohmic contact layer by a laser patterning process so that it is capable of preventing a semiconductor layer from being damaged, and reducing fabrication time, wherein the method comprises forming a gate electrode pattern on a substrate; forming a gate insulating layer on the gate electrode pattern; sequentially forming a semiconductor layer pattern and an ohmic contact layer pattern on the gate insulating layer; forming source and drain electrode patterns on the ohmic contact layer pattern, wherein the source and drain electrode patterns are provided at a fixed interval therebetween; and removing the ohmic contact layer pattern exposed between the source and drain electrode patterns through the use of laser.

Abstract: A method and apparatus of fabricating a thin film transistor array substrate is disclosed, which is capable of reducing fabrication time owing to a simplified fabrication process, wherein at least one of steps for forming a gate pattern, forming a semiconductor pattern, forming a data pattern, removing an ohmic contact layer pattern exposed between source and drain electrode patterns, and forming a conductive layer pattern is performed by a laser scribing process.