Patents Assigned to JSAB TECHNOLOGIES LIMITED
  • Power semiconductor devices having a semi-insulating field plate
    Patent number: 9647077
    Abstract: A power semiconductor device comprising a first metal electrode and a second metal electrode formed on a first substrate surface of a semiconductor substrate, a semi-insulating field plate interconnecting said first and second metal electrodes, and an insulating oxide layer extending between said first and second metal electrodes and between said field plate and said semiconductor substrate, wherein said semi-insulating field plate is a titanium nitride (TiN) field plate.
    Type: Grant
    Filed: December 10, 2014
    Date of Patent: May 9, 2017
    Assignee: JSAB TECHNOLOGIES LIMITED
    Inventors: Johnny Kin-On Sin, Iftikhar Ahmed, Chun-Wai Ng