Abstract: The present inventive concept relates to a method of manufacturing a tandem solar cell, the method including: a step of preparing a perovskite solar cell, including a first conductive charge transporting layer, a light absorption layer, and a second conductive charge transporting layer, on a substrate; a step of forming a partition part in the perovskite solar cell to form a first perovskite unit solar cell and a second perovskite unit solar cell; a step of forming a contact part in the first perovskite unit solar cell to expose a certain region of the first perovskite unit solar cell; a step of forming a buffer layer in a top surface of each of the first perovskite unit solar cell and the second perovskite unit solar cell; a step of preparing a plurality of second solar cells; a step of bonding the plurality of second solar cells to the buffer layer to form a first unit tandem solar cell where the first perovskite unit solar cell, the buffer layer, and the second solar cell are sequentially stacked and a sec

Abstract: The present inventive concept relates to a thin film type solar cell including a plurality of unit cells serially connected to one another on a substrate; and a light transmission part provided in the plurality of unit cells, wherein the light transmission part is provided in a discontinuous rectilinear structure including at least one disconnection part. According to the present inventive concept, since the light transmission part is discontinuously formed, the repetition characteristic of the light transmission part including a plurality of dot patterns may be reduced, thereby effectively solving a problem where a wave pattern such as a moire phenomenon occurs when light is passing through the light transmission part.

Abstract: The present inventive concept relates to a substrate processing apparatus comprising: a chamber providing a processing space; a lid for covering the top of the chamber; a substrate support part supporting at least one substrate and rotating about a rotation axis such that the substrate passes through an imaging area; a gas injection part for injecting a process gas toward the substrate support part; an area image capturing part for capturing an image of the imaging area to obtain a thermal image of the imaging area; and a calculation part for calculating the temperature data of the substrate from the thermal image.

Abstract: The present inventive concept relates to a block valve for a substrate processing device, and a substrate processing device, the block valve comprising: a valve part having a contracting and expanding opening and closing part; a drive part which drives the opening and closing part; and a block body which comprises an accommodating part in which the opening and closing part is accommodated, wherein the block body comprises a gas inflow port connected to the accommodating part and a gas outflow port connected to the accommodating part, and the opening and closing part opens and closes the gas inflow port or the gas outflow port, within the accommodating part.

Abstract: Provided is an apparatus for processing a substrate, which includes a chamber having a processing space in which a process of depositing a thin-film on a substrate is performed and a structure which is installed to expose at least one surface to the processing space and in which a coating layer made of a polymer forming at least one of covalent bond and double bond at an end tail is formed on the surface exposed to the processing space. Thus, the substrate processing apparatus in accordance with an exemplary embodiment may restrict or prevent particle generation and substrate pollution generation caused by a thin-film deposited in the chamber. Also, a period of cleaning the chamber and a structure or a component in the chamber may be extended. Thus, a product yield rate and an apparatus operation efficiency may improve.

Abstract: The present inventive concept provides a solar cell and a manufacturing method therefor, the solar cell comprising: a semiconductor substrate; a first transparent electrode layer provided on one surface of the semiconductor substrate; and a first electrode provided on one surface of the first transparent electrode layer, wherein the first electrode comprises a first pattern layer pattern-formed through a deposition process using a shadow mask.

Abstract: A method of forming an electrode in accordance with an exemplary embodiment includes a process of forming a mask pattern on one surface of a base to expose a partial area of the one surface of the base by using a mask material that is polymer including an end tail having at least one bonding structure of covalent bond and double bond, a process of loading the base on which the mask pattern is formed into a chamber, and a process of forming a conductive layer containing copper on the exposed one surface of the base by using an atomic layer deposition method that alternately injects a source material containing copper and a reactive material that reacts with the source material into the chamber. Thus, according to the method of forming an electrode in accordance with an exemplary embodiment, a thin-film caused by a material for forming an electrode is not formed on a surface of the mask pattern.

Abstract: The present inventive concept is a substrate processing method in which processing steps are carried out on a substrate supported on a support unit in a processing space that is divided into a first processing area and a second processing area, the substrate processing method comprising: a step in which a first gas and a first purge gas are sprayed in the first processing area; and a step in which a second purge gas and a second gas are sequentially sprayed in the second processing area.

Abstract: Provided is a gas supply method using a gas distribution unit which includes a plurality of gas flow rate control devices installed on a plurality of gas suppling channels, respectively, and is configured to individually control the flow rates of process gases supplied through the respective gas supply channels, and differently adjust the gas supply times and supply order of process gases supplied through the respective gas supplying channels, thereby improving the uniformity in thickness of the deposited thin film across the entire surface area of the substrate.

Abstract: The present disclosure relates to a substrate transfer method and apparatus which controls a substrate transfer robot using position information of a substrate, when the substrate is loaded or unloaded in the substrate transfer apparatus including the substrate transfer robot. When an operation of setting a new reference value due to a change in process or hardware after setting the initial reference value for loading or unloading the substrate is requested, the substrate transfer method and apparatus can automatically perform the reference value setting operation. Therefore, the substrate transfer method and apparatus can transfer the substrate such that the substrate is located in the center of the susceptor, even though the reference value of the substrate transfer robot is not manually changed.

Abstract: The present inventive concept relates to a substrate processing device, comprising: a chamber; a chamber lid that supports the upper portion of the chamber; a susceptor that is installed to face the chamber lid and supports a substrate; a gas ejection unit that ejects a plurality of gases; and an anti-sag bolt that is installed in the chamber lid and can be combined with the gas injection unit, wherein the anti-sag bolt includes a plurality of flow paths through which a plurality of gases can flow.

Abstract: In accordance with an exemplary embodiment, a method for forming a thin film includes supplying a reducing gas onto a substrate provided in a reaction space, applying a power to generate plasma in the reaction space, and supplying a tungsten containing gas onto the substrate, and the supplying of the tungsten containing gas is intermittently performed while the reducing gas is supplied.

Abstract: The present invention relates to a solar cell, including a perovskite solar cell including a light absorption layer including a perovskite compound and a conductive charge transporting layer included in at least one surface of one surface and the other surface of the light absorption layer, wherein the one surface of the light absorption layer is disposed closer to an incident surface for sunlight than the other surface of the light absorption layer, an optical band gap of an inner portion of the light absorption layer is constant or decreases toward the other surface from the one surface, and an optical band gap of the one surface of the light absorption layer is greater than an optical band gap of the other surface of the light absorption layer, and a method of manufacturing the solar cell.

Abstract: The present inventive concept relates to a solar cell manufacturing method, a solar cell manufactured thereby, and a substrate for a solar cell. The solar cell manufacturing method involves forming a separating portion for separating a substrate, which is for manufacturing the solar cell, into a plurality of pieces. The solar cell manufacturing method comprises: a step for preparing the substrate; a first substrate etching step for forming a first groove in one surface of the substrate; a second substrate etching step for forming a second groove inside the first groove; and a third substrate etching step for etching the substrate including the second groove, wherein the separating portion includes the first groove and the second groove.

Abstract: The present inventive concept relates to a gas supply apparatus for a substrate processing apparatus, the gas supply apparatus comprising: a first supply line connected to a first gas spray unit; a plurality of first gas supply devices connected to the first supply line; a first measurement device measuring a first pressure at the first supply line; a second supply line connected to a second gas spray unit; a plurality of second gas supply devices connected to the second supply line; and a second measurement device measuring a second pressure at the second supply line, wherein the first measurement device checks if the first pressure deviates from a first reference value, and the second measurement device checks if the second pressure deviates from a second reference value.

Abstract: A substrate processing apparatus includes a chamber having a sidewall; a susceptor mounting a substrate inside the chamber, an upper dome covering an upper surface of the chamber and formed of a transparent dielectric material, and an antenna disposed on the upper dome to generate inductively coupled plasma. The antenna includes two one-turn unit antennas, the wo one-turn unit antennas each has an upper surface and a lower surface and are disposed to overlap each other on the upper surfaces and the lower surfaces of the two one-turn unit antennas, the two one-turn unit antennas are connected in parallel and are connected to a radio-frequency (RF) power supply, and a width direction of each of the one-turn unit antennas stands upright vertically.

Abstract: The present inventive concept relates to a substrate processing apparatus comprising: a chamber; a substrate support part which supports one or more substrates in the chamber; an upper electrode which is disposed above and arranged opposite to the substrate support part; and a lower electrode which is disposed below and spaced apart from the upper electrode, wherein the lower electrode includes a first electrode to which first RF power having a first frequency is applied and a second electrode to which second RF power having a second frequency different from the first frequency is applied.

Abstract: A substrate processing method which can supply gas to a plurality of process chamber through one gas supply unit, and supply different gases at the same time, thereby improving the uniformity of the thicknesses of thin films deposited in the respective chambers. The substrate processing method can perform a process in only one chamber by supplying gas to only the chamber at the same time or perform different processes in the plurality of chambers by supplying different gases to the respective chambers. Therefore, films having uniform thicknesses can be deposited in the respective chambers, and the gas supply efficiency can be improved.

Abstract: The present disclosure relates to a substrate processing method, and more particularly, to a substrate processing method for removing an oxide film formed on a substrate. In accordance with an exemplary embodiment, a substrate processing method that processes a substrate loaded into a chamber, includes: supplying a nitrogen-containing gas to an inner space of a plasma generator disposed outside the chamber; activating the nitrogen-containing gas in the inner space; supplying a hydrogen-containing gas to the inner space; and supplying the nitrogen-containing gas activated in the inner space and the hydrogen-containing gas onto the substrate.

Abstract: The present invention relates to a method for manufacturing a solar cell, comprising: a seating process of seating, in a processing space for manufacturing a solar cell, a cell in which a plurality of thin film layers are formed; a coating process of spraying a conductive material onto the cell; and a scribing process of irradiating a laser toward the cell to form a cell separation unit for separating the cell into a plurality of unit cells.