Abstract: The present disclosure relates to a thin film forming method, and more particularly, to a thin film forming method for forming a gallium nitride thin film. In accordance with an exemplary embodiment, a thin film forming method includes: loading a substrate into a process space of a chamber; and forming a gallium nitride thin film on the substrate, and the forming of the gallium nitride thin film includes: supplying a source gas containing gallium onto the substrate; supplying a reactant gas containing nitrogen onto the substrate; and activating and supplying a post-treatment gas containing hydrogen onto the substrate.

Abstract: The present disclosure relates to a method for depositing a thin film, and more particularly, to a method for depositing a thin film, which forms a gate insulation film on a silicon carbide substrate. In accordance with an exemplary embodiment, a method for depositing a thin film includes: preparing a silicon carbide substrate having a plurality of semiconductor regions; and forming a gate insulation film on the silicon carbide substrate at a temperature of 100° C. to 400° C. through an atomic layer deposition process.

Abstract: A substrate processing apparatus includes a chamber, a substrate support positioned inside the chamber and supporting a substrate, an edge frame disposed above the substrate support and extending outward from an edge of the substrate support, and a gas flow-controlling unit installed on a side wall of the chamber to be positioned between the side wall of the chamber and a side surface of the substrate support along a periphery of the substrate support. The gas flow-controlling unit includes a flow path provided in a region overlapping the edge frame. Thus, the gas may be prevented from flowing unevenly to the corners or regions other than the corners within the chamber. That is, the gas may be evenly distributed in the circumferential direction of the chamber. Accordingly, the cleaning defect may be prevented from occurring at the corners of the chamber and in regions other than the corners.

Abstract: Disclosed are a raw material supply method including vaporizing a raw material in a canister, discharging the vaporized raw material, measuring an inner temperature of the canister, calculating a calculated temperature by using the inner temperature, and compensating a variation of the inner temperature by heating a heating unit disposed on the canister at the calculated temperature and a raw material supply apparatus applied to the method for supplying the raw material. The raw material supply method and apparatus may stably supply the vaporized raw material to a process space.

Abstract: The present inventive concept relates to a method for treatment of a substrate having an insulating layer and an electrode layer formed thereon, the method comprising: a plasma treatment step of treating the substrate with plasma by using treatment gas containing fluorine (F); a selective adsorption step of spraying the substrate, subjected to the plasma treatment step, with source gas containing a high-k material to adsorb the high-k material only on the electrode layer; and a selective deposition step of spraying the substrate, subjected to the selective adsorption step, with reaction gas to deposit a high-k layer only on the electrode layer.

Abstract: The present inventive concept relates to a method of manufacturing a thin film of a perovskite compound, including a process of reacting at least one compound selected from among an amine-based compound and an amidine-based compound, an organic metal compound including a divalent positive ion, and at least one hydrogen halide, and a method of manufacturing a solar cell using the same, and According to the present inventive concept, because a perovskite compound is manufactured by performing a reaction through a chemical vapor deposition (CVD) process and an atomic layer deposition (ALD) process, step coverage may be enhanced, and thus, it may be possible to form a thin film having a uniform thickness and a problem where a solvent remains may also be solved.

Abstract: Provided is a method for depositing a thin film, which is performed to deposit a thin film on a substrate. A method for depositing a thin film includes supplying a source gas together with a first diffusion gas onto a substrate provided in a process space, and supplying a reactant gas together with a second diffusion gas onto the substrate to continuous with the supplying of the source gas. The first diffusion gas and source gas and the second diffusion gas and reactant gas are supplied onto the substrate through paths different from each other.

Abstract: The present inventive concept relates to a method of manufacturing a tandem solar cell, the method including: a step of preparing a perovskite solar cell, including a first conductive charge transporting layer, a light absorption layer, and a second conductive charge transporting layer, on a substrate; a step of forming a partition part in the perovskite solar cell to form a first perovskite unit solar cell and a second perovskite unit solar cell; a step of forming a contact part in the first perovskite unit solar cell to expose a certain region of the first perovskite unit solar cell; a step of forming a buffer layer in a top surface of each of the first perovskite unit solar cell and the second perovskite unit solar cell; a step of preparing a plurality of second solar cells; a step of bonding the plurality of second solar cells to the buffer layer to form a first unit tandem solar cell where the first perovskite unit solar cell, the buffer layer, and the second solar cell are sequentially stacked and a sec

Abstract: The present inventive concept relates to a thin film type solar cell including a plurality of unit cells serially connected to one another on a substrate; and a light transmission part provided in the plurality of unit cells, wherein the light transmission part is provided in a discontinuous rectilinear structure including at least one disconnection part. According to the present inventive concept, since the light transmission part is discontinuously formed, the repetition characteristic of the light transmission part including a plurality of dot patterns may be reduced, thereby effectively solving a problem where a wave pattern such as a moire phenomenon occurs when light is passing through the light transmission part.

Abstract: The present inventive concept relates to a substrate processing apparatus comprising: a chamber providing a processing space; a lid for covering the top of the chamber; a substrate support part supporting at least one substrate and rotating about a rotation axis such that the substrate passes through an imaging area; a gas injection part for injecting a process gas toward the substrate support part; an area image capturing part for capturing an image of the imaging area to obtain a thermal image of the imaging area; and a calculation part for calculating the temperature data of the substrate from the thermal image.

Abstract: The present inventive concept relates to a block valve for a substrate processing device, and a substrate processing device, the block valve comprising: a valve part having a contracting and expanding opening and closing part; a drive part which drives the opening and closing part; and a block body which comprises an accommodating part in which the opening and closing part is accommodated, wherein the block body comprises a gas inflow port connected to the accommodating part and a gas outflow port connected to the accommodating part, and the opening and closing part opens and closes the gas inflow port or the gas outflow port, within the accommodating part.

Abstract: Provided is an apparatus for processing a substrate, which includes a chamber having a processing space in which a process of depositing a thin-film on a substrate is performed and a structure which is installed to expose at least one surface to the processing space and in which a coating layer made of a polymer forming at least one of covalent bond and double bond at an end tail is formed on the surface exposed to the processing space. Thus, the substrate processing apparatus in accordance with an exemplary embodiment may restrict or prevent particle generation and substrate pollution generation caused by a thin-film deposited in the chamber. Also, a period of cleaning the chamber and a structure or a component in the chamber may be extended. Thus, a product yield rate and an apparatus operation efficiency may improve.

Abstract: The present inventive concept provides a solar cell and a manufacturing method therefor, the solar cell comprising: a semiconductor substrate; a first transparent electrode layer provided on one surface of the semiconductor substrate; and a first electrode provided on one surface of the first transparent electrode layer, wherein the first electrode comprises a first pattern layer pattern-formed through a deposition process using a shadow mask.

Abstract: A method of forming an electrode in accordance with an exemplary embodiment includes a process of forming a mask pattern on one surface of a base to expose a partial area of the one surface of the base by using a mask material that is polymer including an end tail having at least one bonding structure of covalent bond and double bond, a process of loading the base on which the mask pattern is formed into a chamber, and a process of forming a conductive layer containing copper on the exposed one surface of the base by using an atomic layer deposition method that alternately injects a source material containing copper and a reactive material that reacts with the source material into the chamber. Thus, according to the method of forming an electrode in accordance with an exemplary embodiment, a thin-film caused by a material for forming an electrode is not formed on a surface of the mask pattern.

Abstract: The present inventive concept is a substrate processing method in which processing steps are carried out on a substrate supported on a support unit in a processing space that is divided into a first processing area and a second processing area, the substrate processing method comprising: a step in which a first gas and a first purge gas are sprayed in the first processing area; and a step in which a second purge gas and a second gas are sequentially sprayed in the second processing area.

Abstract: Provided is a gas supply method using a gas distribution unit which includes a plurality of gas flow rate control devices installed on a plurality of gas suppling channels, respectively, and is configured to individually control the flow rates of process gases supplied through the respective gas supply channels, and differently adjust the gas supply times and supply order of process gases supplied through the respective gas supplying channels, thereby improving the uniformity in thickness of the deposited thin film across the entire surface area of the substrate.

Abstract: The present disclosure relates to a substrate transfer method and apparatus which controls a substrate transfer robot using position information of a substrate, when the substrate is loaded or unloaded in the substrate transfer apparatus including the substrate transfer robot. When an operation of setting a new reference value due to a change in process or hardware after setting the initial reference value for loading or unloading the substrate is requested, the substrate transfer method and apparatus can automatically perform the reference value setting operation. Therefore, the substrate transfer method and apparatus can transfer the substrate such that the substrate is located in the center of the susceptor, even though the reference value of the substrate transfer robot is not manually changed.

Abstract: The present inventive concept relates to a substrate processing device, comprising: a chamber; a chamber lid that supports the upper portion of the chamber; a susceptor that is installed to face the chamber lid and supports a substrate; a gas ejection unit that ejects a plurality of gases; and an anti-sag bolt that is installed in the chamber lid and can be combined with the gas injection unit, wherein the anti-sag bolt includes a plurality of flow paths through which a plurality of gases can flow.

Abstract: In accordance with an exemplary embodiment, a method for forming a thin film includes supplying a reducing gas onto a substrate provided in a reaction space, applying a power to generate plasma in the reaction space, and supplying a tungsten containing gas onto the substrate, and the supplying of the tungsten containing gas is intermittently performed while the reducing gas is supplied.

Abstract: The present invention relates to a solar cell, including a perovskite solar cell including a light absorption layer including a perovskite compound and a conductive charge transporting layer included in at least one surface of one surface and the other surface of the light absorption layer, wherein the one surface of the light absorption layer is disposed closer to an incident surface for sunlight than the other surface of the light absorption layer, an optical band gap of an inner portion of the light absorption layer is constant or decreases toward the other surface from the one surface, and an optical band gap of the one surface of the light absorption layer is greater than an optical band gap of the other surface of the light absorption layer, and a method of manufacturing the solar cell.