Abstract: A system for extracting energy from an energy storage device configured to supply direct current (DC) energy at a nominal voltage rating comprises a first node dimensioned and arranged to receive direct current energy from the energy storage device. Embodiments include a self-oscillating circuit having primary and secondary windings wound around a ferrite core, wherein a positive terminal of the primary winding is tied to the negative terminal of the secondary winding at the first node, and wherein a positive terminal of the secondary winding is coupled to a second node, the second node being coupled to a load requiring power to be supplied at one of a voltage less than, equal to, or higher than the nominal voltage. Some embodiments further include a transistor having a base resistively coupled to a negative terminal of the primary winding and a collector coupled to the second node.

Abstract: A universal programmable data communication connection system which is user programmable to provide a selective data path between one or more data source and one or more data destination. The data connection system allows the user to "patch" signals from source to destination with simple commands. The system then provides the data path and conversion processes through selection among prestored process tasks or "softblocks" which are connected to "sockets" by software "wires". Within a finite capacity, one or more data paths of varying degrees of complexity may be connected or disconnected, at operator command, without interruption of existing or non-altered system connections and functions. If the data source and data destination are of different format and/or protocol, the connection system can also provides the corresponding data processing to maintain an uninterrupted flow of data.

Abstract: A data transfer system including a byte bus which provides an eight-bit data transfer between a processor and a plurality of port circuit boards. The system provides dual address and interrupt functionalies in the processor-initiator data transfers which may be initiated in either direction. The processor data transfers use a two-level address management scheme, which once initialized provides rapid access to a select number of address locations from a large number of available addresses allocated to a variety of port circuit boards and addressable functions thereon. Furthermore, the select addresses are assignable according to an interrupt priority value which allows for the rapid identification of the address requesting an interrupt service, and also for the subsequent provision of an interrupt service vector to the processor to provide the appropriate processing of the requested interrupt.

Abstract: A novel ceramic-ceramic composite of a uniform dispersion of silicon carbide fibers in a matrix of MgO.multidot.nAl.sub.2 O.sub.3 wherein n ranges from about 1 to about 4.5, said composite comprising by volume from 1 to 50% silicon carbide fibers and from 99 to 50% MgO.multidot.nAl.sub.2 O.sub.3. The composite is readily fabricated by forming a powder comprising a uniform dispersion of silicon carbide fibers in poorly crystalline phase comprising MgO and Al.sub.2 O.sub.3 in a mole ratio of n and either (a) hot pressing or preferably (b) cold pressing to form a preform and then forging utilizing a temperature in the range of 1100.degree. C. to 1900.degree. C. and a strain rate ranging from about 10.sup.-5 seconds .sup.-1 to about 1 seconds .sup.-1 so that surfaces cracks do not appear to obtain a shear deformation greater than 30%.

Abstract: The invention relates to producing relatively flaw free zirconia ceramic shapes requiring little or no matching by superplastic forging of a fully sintered or partially sintered preform. The preform is prepared by providing a starting powder comprising by weight from about 70% to about 100% zirconia and from about 0 to about 30% of stabilizing additives, e.g. commerically available TZ-3Y powder, cold pressing to obtain a preform of green density ranging from about 30% of theoretical density to about 75% of theoretical density and partially or fully sintering at atmospheric pressure, e.g. in argon or air at a temperature ranging from about 900.degree. C. to about 1900.degree. C. The superplastic forging is carried out by isothermally pressing the partially or fully sintered preform into substantially final shape utilizing a temperature and strain rate such that surface cracks do not occur, e.g. utilizing a temperature of 1310.degree. C.

Abstract: The invention relates to producing relatively flaw free silicon nitride ceramic shapes requiring little or no machining by superplastic forgingThis invention herein was made in part under Department of Energy Grant DE-AC01-84ER80167, creating certain rights in the United States Government. The invention was also made in part under New York State Science and Technology Grant SB1R 1985-10.