Patents Assigned to JWL (Zhejiang) Semiconductor Co., Ltd
  • Patent number: 11901872
    Abstract: A thin film bulk acoustic resonator and a method for manufacturing the same. The thin film bulk acoustic resonator comprises a bottom electrode layer, a piezoelectric layer, and a top electrode layer, which are disposed on a substrate in which an acoustic reflection structure is located, where a portion which is of the piezoelectric layer and corresponds to a boundary of the acoustic reflection structure is depolarized to form a depolarized portion. The method comprises providing a bottom electrode layer on a substrate to cover an acoustic reflection structure which is formed or to be formed on the substrate; providing a piezoelectric layer on the bottom electrode layer; depolarizing a portion, which is of the piezoelectric layer and corresponds to a boundary of the acoustic reflection structure, to form a depolarized portion; and providing a top electrode layer on the piezoelectric layer.
    Type: Grant
    Filed: June 28, 2020
    Date of Patent: February 13, 2024
    Assignee: JWL (ZHEJIANG) SEMICONDUCTOR CO., LTD.
    Inventors: Linping Li, Jinghao Sheng, Zhou Jiang
  • Patent number: 11177141
    Abstract: A method for packaging a chip and a chip package structure are provided. The method is used to package the chip including an acoustic filter. The packaging substrate and the device wafer are welded together, wherein the edge of the device wafer is chamfered, the packaging substrate is provided with a groove, the chamfered portion of device wafer is aligned with the groove on the substrate, and then a mask is disposed. The surface of the mask facing the device wafer is an inclined surface, forming a wedge-shaped opening. A package resin material is printed, wherein the package resin material falls into the groove through the inclined surface of the mask, and a package resin film is formed between the groove and the chamfer. The mask is removed along the first surface toward the second surface. The package resin is cured in a position where the resin film is located.
    Type: Grant
    Filed: July 9, 2020
    Date of Patent: November 16, 2021
    Assignee: JWL (Zhejiang) Semiconductor Co., Ltd
    Inventor: Linping Li