Abstract: The present invention provides: an InP wafer optimized from the viewpoint of small edge roll-off (ERO) and sufficiently high flatness even in the vicinity of a wafer edge; and a method for effectively producing the InP wafer. The InP wafer having a roll-off value (ROA) of from ?1.0 ?m to 1.0 ?m is obtained by using a method including: performing a first stage polishing under a processing pressure of from 10 to 200 g/cm2 for a processing time of from 0.1 to 5 minutes, while supplying a polishing solution containing bromine to at least one side of an InP single crystal substrate that will form the InP wafer; and performing a second stage polishing under a processing pressure of from 200 to 500 g/cm2 for a processing time of from 0.5 to 10 minutes, provided that the processing pressure is higher than that of the first stage polishing by 50 g/cm2 or higher.

Abstract: A first copper alloy sputtering target comprising 0.5 to 4.0 wt % of Al and 0.5 wtppm or less of Si and a second copper alloy sputtering target comprising 0.5 to 4.0 wt % of Sn and 0.5 wtppm or less of Mn are disclosed. The first and/or the second alloy sputtering target can further comprise one or more elements selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wtppm or less. A semiconductor element wiring formed by the use of the above targets is also disclosed. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics.

Abstract: A copper alloy sheet material includes 0.5 to 2.5 mass % of Ni, 0.5 to 2.5 mass % of Co, 0.30 to 1.2 mass % of Si and 0.0 to 0.5 mass % of Cr and the balance Cu and unavoidable impurities, wherein an X-ray diffraction intensity ratio is 1.0?I{200}/I0{200}?5.0 when I{200} is a result of the X-ray diffraction intensity of {200} crystal plane of sheet surface and I0{200} is a result of the X-ray diffraction intensity of {200} crystal plane of a standard powder of pure copper, and wherein 0.2% yield strength in a rolling parallel direction (RD) is 800 MPa or more and 950 MPa or less, an electrical conductivity of 43.5% IACS or more and 53.0% IACS or less, 180 degree bending workability in a rolling parallel direction (GW) and a rolling perpendicular direction (BW) is R/t=0, and a difference between the rolling parallel direction (RD) and a rolling perpendicular direction (TD) of the 0.2% yield strength is 40 MPa or less.

Abstract: Provided is a tantalum target, wherein, when a direction normal to a rolling surface (ND), which is a cross section perpendicular to a sputtering surface of a target, is observed via an electron backscatter diffraction pattern method, an area ratio of crystal grains of which a {100} plane is oriented in the ND is 30% or more. An object of the present invention is to provide a tantalum sputtering target in which a deposition rate can be appropriately controlled under high-power sputtering conditions. When sputter-deposition is performed using this kind of a tantalum target, it is possible to form a thin film having superior film thickness uniformity and improve the productivity of the thin film formation process, even for micro wiring.

Abstract: Provided is a novel polyoxometalate and a method for producing the polyoxometalate. The polyoxometalate is represented by the compositional formula: MxOy in which M is tungsten, molybdenum or vanadium; 4?x?1000; and 2.5?y/x?7.

Abstract: A magnetic material sputtering target formed from a sintered body containing at least Co and/or Fe and B, and containing B in an amount of 10 to 50 at %, wherein an oxygen content is 100 wtppm or less. Since the magnetic material sputtering target of the present invention can suppress the generation of particles caused by oxides, the present invention yields superior effects of being able to improve the yield upon producing magnetoresistive films and the like.

Abstract: In an optical modulator capable of modulating incident laser beam L by a compound semiconductor single crystal having a property of generating an electro-optic effect, the attenuation of the signal strength in a low frequency band is prevented without lowering the carrier concentration of the compound semiconductor. The optical modulator 23 comprises: incidence limiting means 25 which is provided on or near an incidence plane 24a, on which the laser beam L can be incident, of the compound semiconductor single crystal 24 so as to limit incidence of light other than the laser beam L on the incidence plane 24a; and a shielding member 26 which is formed from a low-permittivity material having a light blocking effect, and covers a surface 24c of the compound semiconductor single crystal 24 extending along a traveling direction of the laser beam L that entered the compound semiconductor single crystal 24.

Abstract: The present invention provides a method for treating at least one lithium ion battery enclosed in a housing containing aluminum, comprising heating the lithium ion battery using a combustion furnace in which a combustion object is incinerated by flames, while preventing the flames from being directly applied to the housing of the lithium ion battery.

Abstract: An object of the present invention is to provide a copper alloy powder for lamination shaping comprising a copper alloy, a method for producing a lamination shaped product and a lamination shaped product, which can achieve coexistence of mechanical strength and conductivity. One aspect of the present invention relates to a copper alloy powder for lamination shaping, comprising at least one additive element having a solid solution amount to copper of less than 0.2 at %.

Abstract: A sputtering target containing 20 at % to 40 at % of Te, 5 at % to 20 at % of Cu, 5 at % to 15 at % of Zr, and remainder being Al, wherein a structure of the sputtering target is comprise of an Al phase, a Cu phase, a CuTeZr phase, a CuTe phase and a Zr phase. The present invention aims to provide an Al—Te—Cu—Zr-based alloy sputtering target capable of effectively suppressing the degradation of properties caused by compositional deviation, as well as a method of manufacturing the same.

Abstract: Provided is an electromagnetic wave shielding material including a multilayer structure in which at least one metal foil and at least two resin layers are closely laminated, wherein both surfaces of each metal foil are closely laminated to the resin layers; wherein each metal foil satisfies the following relationship with each of the two resin layers adjacent to the metal foil: 0.02?VM/VM??1.2, in which: VM is a volume fraction of the metal foil relative to a total volume of the metal foil and the resin layer; VM? is (?R??R?)/(?M+?R??R?); ?M is a true stress (MPa) of the metal foil at breakage when a tensile stress is applied to the metal foil; ?R is a true stress (MPa) of the resin layer at breakage when a tensile stress is applied to the resin layer; and ?R? is a true stress (MPa) of the resin layer when a logarithmic strain same as a logarithmic strain at breakage of the metal foil is applied to the resin layer.

Abstract: Copper sulfate which includes a Fe with a concentration of 0.08 ppm by mass or less.

Abstract: An FePt-based sintered sputtering target containing C and/or BN, wherein an area ratio of AgCu alloy grains on a polished surface of a cross section that is perpendicular to a sputtered surface of the sputtering target is 0.5% or more and 15% or less. An object of this invention is to provide a sputtering target capable of reducing particles generation during sputtering and efficiently depositing a magnetic thin film of a magnetic recording medium.

Abstract: A laminate for printed wiring board is used in a method of manufacturing printed wiring boards that includes a process of forming a circuit by any one of a semi-additive method, a partly additive method, a modified semi-additive method, and an embedding method. The laminate includes an insulating resin substrate, a metal layer 1 and a metal layer 2 in this order.

Abstract: A rare earth thin-film magnet of a Nd—Fe—B film deposited on a Si substrate, wherein, when the film thickness of the rare earth thin film is 70 ?m or less, the Nd content satisfies the conditional expression of 0.15?Nd/(Nd+Fe)?0.25 in terms of an atomic ratio; when the film thickness of the rare earth thin film is 70 ?m to 115 ?m (but excluding 70 ?m), the Nd content satisfies the conditional expression of 0.18?Nd/(Nd+Fe)?0.25 in terms of an atomic ratio; and when the film thickness of the rare earth thin film is 115 ?m to 160 ?m (but excluding 115 ?m), the Nd content satisfies the conditional expression of 0.20?Nd/(Nd+Fe)?0.25 in terms of an atomic ratio. An object of the present invention is to provide a rare earth thin-film magnet having a maximum film thickness of 160 ?m and which is free from film separation and substrate fracture, and a method of producing such a rare earth thin-film magnet by which the thin film can be stably deposited.

Abstract: The present invention provides metallic materials for electronic components, having low degree of whisker formation, low adhesive wear property and high durability, and connector terminals, connectors and electronic components using such metallic materials.

Abstract: The present invention provides a niobium oxide sintered compact having a composition of NbOx (2<x<2.5), and specifically provides a niobium oxide sintered compact which can be applied to a sputtering target for forming a high-quality resistance change layer for use in ReRAM. In particular, the present invention aims to provide a high-density niobium oxide sintered compact suitable for stabilizing the sputtering process.

Abstract: Provided is a method for manufacturing high purity tin including: depositing electrodeposited tin on the surface of a cathode by electrowinning in an electrolytic bath in which a diaphragm is placed between an anode and the cathode, by using a raw material for tin as the anode and a leachate obtained by electrolytically leaching the raw material for tin in a sulfuric acid solution as an electrolytic solution, the electrolytic solution containing a smoothing agent for improving a surface property of the electrodeposited tin; discharging the electrolytic solution from the electrolytic bath such that lead in the discharged electrolytic solution is removed; and putting the electrolytic solution from which lead is removed back into the electrolytic bath.

Abstract: Provided is a semiconductor photodiode which has an electrode structure having not only high adhesion to a Mg2Si material but also improved overall performance including photosensitivity. A photodiode comprising: a pn junction of a magnesium silicide crystal; an electrode comprising a material that is in contact with p-type magnesium silicide; and an electrode comprising a material that is in contact with n-type magnesium silicide, wherein the material that is in contact with p-type magnesium silicide is a material which has a work function of 4.81 eV or more and reacts with silicon to form a silicide or form an alloy with magnesium.

Abstract: Provided are a high resistance CdTe-based compound single crystal with miniaturized Te precipitates and a method for producing the same. According to one embodiment of the present invention, a CdTe based compound single crystal is provided including a precipitate having a particle size of less than 0.1 ?m obtained from an analysis by a light scattering tomography method. In the CdTe based compound single crystal, resistivity may be 1×107 ?cm or more. In addition, in the CdTe based compound single crystal, a precipitate having a particle size of 0.1 ?m or more obtained from the analysis by the light scattering tomography method is not detected. In the CdTe based compound single crystal, the precipitate may be a Te precipitate.