Abstract: A method of producing a thin film transistor comprises irradiating a resist on a glass base plate with a ray from a light source through a mask and, thereafter, developing the resist to form contact holes, using an i-ray as the ray.

Abstract: An apparatus for producing a hologram mask. The apparatus includes a first object light at least partially transmittable through a first original mask having a light transmitting screening pattern, and a first reference light having a first phase difference between it and the first object light. The first object and reference lights cause interference patterns to be recorded a hologram recording material, as do a second object light at least partially transmittable through a second original mask having a light transmitting screening pattern, and a second reference light having a second phase difference between it and the second object light where the second phase difference is not the same as the first phase difference. The resulting first and second original mask images recorded in the hologram recording material can be simultaneously replayed to produce an exposed pattern approximating an exposed pattern of a non-holographic phase shifting photomask.

Abstract: A thin film transistor includes a one conductive type semiconductor layer (11); a source region (12) and a drain region (13) which are separately provided in the semiconductor layer; and a gate electrode (14) provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width (Ws) of the junction face between the source region and the channel (16) which is provided between the source region and drain region, is different from the width (Wd) of the junction face between the above channel region and the drain region.

Abstract: A method of producing a thin film transistor comprises irradiating a resist on a glass base plate with a ray from a light source through a mask and, thereafter, developing the resist to form contact holes, using an i-ray as the ray.

Abstract: Disclosed are apparatus for forming a semiconductor film having an excellent crystallinity from a non-single crystal semiconducting layer formed on a base layer made of an insulating material. The apparatus includes a light source, a homogenizer for homogenizing an intensity distribution of the emitted light, an amplitude-modulation means for performing the amplitude-modulation such that the amplitude of the light, of which the intensity distribution is homogenized, is increased in the direction of the relative motion of the light to the base layer, an optional light projection optical system for projecting the amplitude-modulated light onto the surface of the non-single crystal semiconductor such that a predetermined irradiation energy can be obtained, a phase shifter for providing a low temperature point in the surface irradiated by the light, and a substrate stage to move the light relative to the substrate thereby enabling scanning in the X and Y axis.

Abstract: A plasma processing apparatus comprises: a chamber 12 having at least one opening and for generating plasma; a dielectric member 14 provided to cover the opening air-tightly; at least one wave guide 16 provided in the exterior of the chamber such that the one end side opposes the dielectric member; an electromagnetic wave source 20 provided on the other end side of the wave guide; a plurality of holes 38, 40, 42, 44, 46 provided on a surface opposing the dielectric member of the wave guide; and hole area adjusting means 18 provided in at least one of the above-mentioned holes so as to adjust the opening area of the hole.

Abstract: A treatment method of annealing and doping a semiconductor including irradiating a semiconductor layer (13) formed on a substrate (11) with a laser beam (a), thereby melting at least a part of the semiconductor layer; irradiating a target material (2) including atoms with which the semiconductor layer is to be doped with the laser beam (a?), thereby ablating the atoms of the target material; and doping the melted semiconductor layer with the ablated atoms.

Abstract: A method of forming a metallic wiring layer in a selected region of a layer-stacked plate, which includes the first process of introducing gas consisting of organometallic molecules into a reaction chamber having a layer-stacked plate arranged therein, and forming an adsorbed molecular layer composed of the organometallic molecules on the layer-stacked plate; the second process of reducing the concentration of the gas in the reaction chamber or exhausting the reaction chamber, after forming the adsorbed molecular layer; the third process of carrying a light irradiation against a selected region on the layer-stacked plate; the fourth process of removing the adsorbed molecular layer formed in the region other than the selected region, from the layer-stacked plate; and the fifth process of forming a metallic film in the selected region.

Abstract: There is provided an input-output (I/O) protective circuit having more stable I/O protective function for use in the liquid crystal display device. An IO protective circuit includes: a resistance 13 provided between an I/O terminal pad 11 and an I/O primary stage thin film transistor 12, a wiring connecting the I/O terminal pad 11 with the resistance 13, and two I/O protective thin film transistors 14 connected in series between a ground terminal 20 and a power source terminal 21.

Abstract: A thin film transistor includes a one conductive type semiconductor layer; a source region and a drain region which are separately provided in the semiconductor layer; and a gate electrode provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width of the junction face between the source region and the channel which is provided between the source region and drain region, is different from the width of the junction face between the above channel region and the drain region.

Abstract: A method of in-situ monitoring of a crystallization state is used for laser anneal processing for applying an energy line irradiation for at least one of crystallization of a thin film and promotion of the crystallization. The method of in-situ monitoring of a crystallization state is characterized by irradiating simultaneously at least a plurality of monitoring places in a region having a predetermined area of at least one of the surface and the underside of the thin film by a monitor light for monitoring a crystallization state of the thin film at least during or after of before, during and after the energy line irradiation directly or through a substrate, and measuring a temporal change of the intensity of at least one of a reflected light and a transmitted light, from the surface or the underside of the thin film, of the monitor light as a light intensity distribution related to the positions of the monitoring places.

Abstract: Methods for producing a hologram mask approximating the exposure produced by a non-holographic phase shifting photo mask are disclosed. One such method exposes a hologram recording material to a first object light, having passed through a first original mask and a first reference light having a difference in phase with the first object light, and further exposing the hologram recording material to a second object light, having passed through a second original mask and a second reference light having a difference in phase with the second object light, wherein first and second phase differences are not the same and wherein the exposed hologram material can be replayed to produce an exposed pattern that approximates an exposed pattern of a non-holographic phase shifting photomask.

Abstract: Methods for forming a single crystal semiconductor thin film layer from a non-single crystal layer includes directing a light source having a homogenized intensity distribution and a modulated amplitude towards the non-single crystal layer, and relatively moving the light with respect to the layer wherein the amplitude of the conditioned light is preferably increased in the direction of relative motion of the light to the layer. Preferred methods also include multiple light exposures in overlapping series to form ribbon-shaped single crystal regions, and providing a low temperature point in the semiconductor layer to generate a starting location for single crystalization.

Abstract: A treatment apparatus for annealing and/or doping of a semiconductor, the apparatus having an air shield chamber in which are disposed a treated plate including a substrate and a semiconductor layer formed directly or indirectly thereon, and a target material having atoms with which a semiconductor layer is to be doped. At least one laser beam is directed to at least a part of the semiconductor layer and at least a part of the target material. Where multiple beams are used, whether from a single or multiple sources, one beam is directed at the semiconductor layer and another beam is directed to the target material. Where a single beam is used, the beam is directed at the semiconductor layer and at least a portion of the laser beam is reflected by the semiconductor layer to be incident on the target material.

Abstract: An optical recording art is characterized by converting a light from a light source into a modulated light including an amplitude-modulated light and a phase-modulated light and forming an image of the modulated light on a surface of an object.

Abstract: An exposure method includes the light incidence step of letting at least a part of light emitted from a light source for exposure use be incident on a mask supported by a supporting device, and the imaging step of forming an image of a mask pattern on a photosensitive material by guiding the reflecting light from the mask such that the photosensitive material supported by the supporting device receives the reflecting light coming from an incidence direction which is different from the incidence direction of the light incident on the mask.

Abstract: A thin film transistor capable of controlling the dispersion in its characteristic, which includes a glass base plate 2, an insulating foundation film 3 made of silicon dioxide (SiO2) and formed on the glass base plate 2, a semiconductor layer 4 made of silicon (Si) formed on the insulating foundation film 3, a source region 8 and a drain region 9 which are formed on the semiconductor layer 4 to be separately located on both sides in the longitudinal direction of the semiconductor layer, a channel region 10 existing between the source region 8 and drain region 9, a gate insulating film 6 made of SiO2 and formed on the channel region 10, and a gate electrode 7 formed on the gate insulating film 6, wherein the taper angle &thgr; of the end portion 5 located in the width direction WD of the channel region 10 covered by at least the gate electrode 7 is 60° or more.

Abstract: In a second exposure following a first exposure, a light transmitting-screening pattern of a second original mask is exposed on a hologram material by using a second object light to be irradiated on a hologram material though the second original mask and a second reference light to be irradiated on a hologram material to be irradiated on the hologram material not through the second original mask, and by changing a second phase difference between the second object light and the second reference light in a position in an optical path from a light source to the hologram material so that a first phase difference between the first object light and the first reference light may differ from the second phase difference.