Patents Assigned to Kabushiki Kaisha Ekisho Sentan Gijutsu Kaishatsu C
  • Publication number: 20050161738
    Abstract: A thin film transistor includes a one conductive type semiconductor layer; a source region and a drain region which are separately provided in the semiconductor layer; and a gate electrode provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width of the junction face between the source region and the channel which is provided between the source region and drain region, is different from the width of the junction face between the above channel region and the drain region.
    Type: Application
    Filed: March 4, 2003
    Publication date: July 28, 2005
    Applicant: Kabushiki Kaisha Ekisho Sentan Gijutsu Kaishatsu C
    Inventors: Masato Hiramatsu, Masakiyo Matsumura, Mikihiko Nishitani, Yoshinobu Kimura, Yoshitaka Yamamoto