Abstract: A method of exposing a surface to be exposed and an attenuated type phase shift mask for use in the method are provided herein. The attenuated type phase shift mask has a reference area allowing a light radiated from a light source to pass through and an amplitude and phase modulation area allowing a part of said light to pass through. The phase modulation amount of the amplitude and phase modulation area relative to the reference area of the attenuated type phase shift mask is {360°×n+(182° to 203°)} (n is an integer).
Type:
Grant
Filed:
April 5, 2006
Date of Patent:
August 25, 2009
Assignee:
Kabushiki Kaisha Ekisho Sentan Gijutsu Kihatsu Center