Abstract: Provided is an inkjet application device (1) including a distribution flow path for the liquid material, the distribution flow path including a first flow channel (4) configured to supply the liquid material pumped with a pump (2) to a supply tank (3) and a second flow channel (6) configured to supply the liquid material in the supply tank (3) to the inkjet head (5), wherein the supply tank (3) accommodates a filter (40), which is configured to allow the particles in the liquid material to pass therethrough without allowing air bubbles in the liquid material, which are generated by the pumping of the pump (2), to pass therethrough.

Abstract: The film coating device forms a film of a coating liquid on the surface of a material to be coated using an inkjet printer. A print head unit moves in a first direction with respect to a surface of a material to be coated, and a plurality of print heads are continuously mounted on the print head unit over an entire coating width in a direction or orthogonal to a first direction. A fixed control unit is provided on a fixed portion of the film coating device, and a coating control unit is provided on the moving portion of the film coating device. The coating control unit is configured to control a coating state of the plurality print heads and moves together with the print head unit. The coating control unit is connected to the fixed control unit by a transmission line.

Abstract: There are provided n number of line-type inkjet nozzles (2) which include nozzles (4) that eject a liquid material and are arranged in a row, and which are arranged in parallel with each other so that positions of the nozzles (4) are shifted from each other by 1/n of a nozzle pitch (P1). Thus, an inkjet head (1) as a whole has a state equivalent to a state in which the nozzles (4) are arranged at 1/n of a nozzle pitch of one line-type inkjet nozzle (2). The inkjet head (1) is capable of adjusting a timing of ejecting the liquid material for each line-type inkjet nozzle (2). Accordingly, adjustment of a dot pitch such as fine coating and rough coating can be performed with ease.

Abstract: There are provided n number of line-type inkjet nozzles (2) which include nozzles (4) that eject a liquid material and are arranged in a row, and which are arranged in parallel with each other so that positions of the nozzles (4) are shifted from each other by 1/n of a nozzle pitch (P1). Thus, an inkjet head (1) as a whole has a state equivalent to a state in which the nozzles (4) are arranged at 1/n of a nozzle pitch of one line-type inkjet nozzle (2). The inkjet head (1) is capable of adjusting a timing of ejecting the liquid material for each line-type inkjet nozzle (2). Accordingly, adjustment of a dot pitch such as fine coating and rough coating can be performed with ease.

Abstract: There are provided n number of line-type inkjet nozzles (2) which include nozzles (4) that eject a liquid material and are arranged in a row, and which are arranged in parallel with each other so that positions of the nozzles (4) are shifted from each other by 1/n of a nozzle pitch (P1). Thus, an inkjet head (1) as a whole has a state equivalent to a state in which the nozzles (4) are arranged at 1/n of a nozzle pitch of one line-type inkjet nozzle (2). The inkjet head (1) is capable of adjusting a timing of ejecting the liquid material for each line-type inkjet nozzle (2). Accordingly, adjustment of a dot pitch such as fine coating and rough coating can be performed with ease.

Abstract: A polishing machine for a peripheral edge of a semiconductor wafer comprises a rotary mechanism 2 which rotates a stack 1 of semiconductor wafers 4 mounted thereon, and a polishing mechanism 3 which is arranged to be movable in the radial direction of the rotary mechanism 2 and polishes the peripheral edges of the rotating semiconductor wafers 4 by means of contactless polishing. Minute gaps s are formed between the rotary column 10 of the polishing mechanism 3 and the stack 1 of semiconductor wafers 4, and polishing solution is drawn into these minute gaps s. The peripheral edges of the semiconductor wafers 4 are polished by means of contactless polishing, using polishing abrasive particles included in polishing solution.