Patents Assigned to Kabushiki Kaisha Kobe Sho (Kobe Steel, Ltd.)
  • Publication number: 20160089784
    Abstract: A total time necessary for work is shortened by reducing program correcting.
    Type: Application
    Filed: April 17, 2014
    Publication date: March 31, 2016
    Inventor: Takeshi KOIKE
  • Publication number: 20160082702
    Abstract: An aluminum alloy substrate bears a first layer on at least one side thereof, and a second layer on at least part of the first layer. The first layer includes an oxide film containing Mg in a content of from 0.1 atomic percent to less than 30 atomic percent. The second layer contains siloxane bonds. The second layer is disposed in a mass of coating of from 0.1 mg/m2 to less than 30 mg/m2. Assume that parallel polarized light is applied to the side bearing the first layer and the second layer at an incident angle of 75°, and resulting data are analyzed by Fourier-transform infrared spectroscopy to give a spectrum. In the spectrum, a peak occurring adjacent to 1057 cm?1 has an area of 0.01 or more with respect to a base line drawn from 1026 cm?1 to 1084 cm?1.
    Type: Application
    Filed: May 21, 2014
    Publication date: March 24, 2016
    Inventors: Satoru TAKADA, Akihiko TATSUMI
  • Publication number: 20160079437
    Abstract: This thin film transistor comprises, on a substrate, at least a gate electrode, a gate insulating film, an oxide semiconductor layer, a source-drain electrode, and two or more protective films. The oxide semiconductor layer comprises Sn, O and one or more elements selected from the group consisting of In, Ga and Zn. In addition, the two or more protective films are composed of at least a first protective film that is in contact with the oxide semiconductor film, and one or more second protective films other than the first protective film. The first protective film is a SiOx film having a hydrogen concentration of 3.5 atomic % or lower.
    Type: Application
    Filed: June 24, 2014
    Publication date: March 17, 2016
    Inventors: Mototaka OCHI, Shinya MORITA, Yasuyuki TAKANASHI, Hiroshi GOTO, Toshihiro KUGIMIYA
  • Publication number: 20030019329
    Abstract: In a method for making molten metal, reduced metal which is produced in a direct reduction furnace is melted in a melting furnace located in the close vicinity of the direct reduction furnace to produce the molten metal. The method includes the steps of putting the reduced metal into a metallic container, and loading the container containing the reduced metal into the melting furnace. The method may further includes, before the step of loading the container containing the reduced metal into the melting furnace, a step of cooling the surface of the container so that the surface temperature of the container is 500° C. or less.
    Type: Application
    Filed: July 26, 2002
    Publication date: January 30, 2003
    Applicant: Kabushiki Kaisha Kobe Sho (Kobe Steel, Ltd.)
    Inventors: Hiroshi Sugitatsu, Hiroshi Uemura, Toshiyuki Okumura