Abstract: A total time necessary for work is shortened by reducing program correcting.

Abstract: An aluminum alloy substrate bears a first layer on at least one side thereof, and a second layer on at least part of the first layer. The first layer includes an oxide film containing Mg in a content of from 0.1 atomic percent to less than 30 atomic percent. The second layer contains siloxane bonds. The second layer is disposed in a mass of coating of from 0.1 mg/m2 to less than 30 mg/m2. Assume that parallel polarized light is applied to the side bearing the first layer and the second layer at an incident angle of 75°, and resulting data are analyzed by Fourier-transform infrared spectroscopy to give a spectrum. In the spectrum, a peak occurring adjacent to 1057 cm?1 has an area of 0.01 or more with respect to a base line drawn from 1026 cm?1 to 1084 cm?1.

Abstract: This thin film transistor comprises, on a substrate, at least a gate electrode, a gate insulating film, an oxide semiconductor layer, a source-drain electrode, and two or more protective films. The oxide semiconductor layer comprises Sn, O and one or more elements selected from the group consisting of In, Ga and Zn. In addition, the two or more protective films are composed of at least a first protective film that is in contact with the oxide semiconductor film, and one or more second protective films other than the first protective film. The first protective film is a SiOx film having a hydrogen concentration of 3.5 atomic % or lower.

Abstract: In a method for making molten metal, reduced metal which is produced in a direct reduction furnace is melted in a melting furnace located in the close vicinity of the direct reduction furnace to produce the molten metal. The method includes the steps of putting the reduced metal into a metallic container, and loading the container containing the reduced metal into the melting furnace. The method may further includes, before the step of loading the container containing the reduced metal into the melting furnace, a step of cooling the surface of the container so that the surface temperature of the container is 500° C. or less.